超净室安全规范手册(英文版)

1/13/2015Dr.KianKaviani-Spring2015-EE-504L1EE–504LSolidStateProcessingandIntegratedCircuitLaboratoryDr.KianKavianiUSCViterbiSchoolofEngineeringMingHsiehElectricalEngineeringDept.1/13/2015Dr.KianKaviani-Spring2015-EE-504L2CourseDescription:ThisisacourseintendedforthefirstyeargraduatestudentsinEngineeringandscienceswhoareinterestedinhandsonapproachtowardlearningofbasicoperationsinfabrication&testingofintegratedcircuits.Thecoursehastwocomponents.Oneistheweeklylecture,whichrunstwiceaweek,forapproximately60-75minuteseach.IntheselecturesbasicprinciplesusedinICfabricationsarediscussedandstate-of-the-artapproachesarealsopresented.Thesecondcomponentofthecoursecomprisesofweeklylaboratorywork,whichrunsforapproximately3hoursforaperiodofelevenweeks.Everystudentwillprocesshis/her3”Siliconwaferindividuallyunderthesupervisionoftheteachingassistants.Thefinishedwafersarethenelectricallytestedfortheextractionoftheparametersofvariousdevicesonthewafer.1/13/2015Dr.KianKaviani-Spring2015-EE-504L3GradingPolicy1.Homework25%2.CMOSQuiz10%3.Midterm20%4.LabPerformance20%5.FinalWrittenReport10%6.FinalExam15%Total:100%1/13/2015Dr.KianKaviani-Spring2015-EE-504L4ScalingandMiniaturizationMoore‟sLawNumberofcomponentsdoublesevery18months1/13/2015Dr.KianKaviani-Spring2015-EE-504L5ITRSPrediction1/13/2015Dr.KianKaviani-Spring2015-EE-504L61/13/2015Dr.KianKaviani-Spring2015-EE-504L7FirstTransistor:BellLabs-1946FirstTransistor:BellLabs-19461/13/2015Dr.KianKaviani-Spring2015-EE-504L81/13/2015Dr.KianKaviani-Spring2015-EE-504L9FirstIntegratedCircuit:TI&Intel1963Moore‟sLaw1/13/2015Dr.KianKaviani-Spring2015-EE-504L101/13/2015Dr.KianKaviani-Spring2015-EE-504L11AdvancementofMicroelectronics“Moore‟sLaw”IntelDataAdvancementofMicroelectronics“Moore‟sLaw”1/13/2015Dr.KianKaviani-Spring2015-EE-504L12PriceReductionwithTime1/13/2015Dr.KianKaviani-Spring2015-EE-504L13WorldwideSemiconductorMarket1/13/2015Dr.KianKaviani-Spring2015-EE-504L14WorldwideSemiconductorMarket1/13/2015Dr.KianKaviani-Spring2015-EE-504L151/13/2015Dr.KianKaviani-Spring2015-EE-504L16ShrinkageofGateLengthwithtime1/13/2015Dr.KianKaviani-Spring2015-EE-504L17NewestSemiconductorIndustryRoadmap(SIR)YearofthefirstDRAMShipment1997199920032006200920122015MinimumFeatureSize(mm)0.250.180.13(0.10)0.10(0.065)0.07(0.045)0.05(0.032)0.035(0.023)WaferDiameter(mm)200300300300450450450DRAM(Bits/Chip)256M1G4G16G64G256G512GNumberofTransistorsInmicroprocessors11M21M76M200M520M1B1.40B3B2.80B5BMaximumWiringLevel66–777–88–9911CriticalDefectSize(mm)0.1250.090.0650.050.0350.0250.015ChipPowerconsumptionisofConcern1/13/2015Dr.KianKaviani-Spring2015-EE-504L18ApplicationsoftheMicrochipsinBiology1/13/2015Dr.KianKaviani-Spring2015-EE-504L19„Snail'neurongrownatopanInfineonTechnologiesCMOSdevicethatmeasurestheneuron'selectricalactivity,linkingchipsandlivingcells.ApplicationsoftheMicrochipsinMedicineDrugDeliverySystem1/13/2015Dr.KianKaviani-Spring2015-EE-504L20RenewableEnergy:SolarCells1/13/2015Dr.KianKaviani-Spring2015-EE-504L21EnvironmentalImpactoftheSemiconductorIndustry1/13/2015Dr.KianKaviani-Spring2015-EE-504L22OutputfromtheFabs:1.LiquidWaste75Gal/in^2(Roughly8500gallonsperWaferX5000wafersperdayX365daysperyear~16BilliongallonsperyearforonlyONEFAB!2.HazardousWaste0.1Kg/in^2~20MillionsKgsperyear!yearforONEFAB.3.ToxicReleases0.01Kg/in^2~2MillionsKgsperyear4.Electricity10KWhr/in^2~2BillionKWhrperyear1/13/2015Dr.KianKaviani-Spring2015-EE-504L23Whydoweneeda“cleanroom”?1/13/2015Dr.KianKaviani-Spring2015-EE-504L24KillingDefectSize1/13/2015Dr.KianKaviani-Spring2015-EE-504L25CleanRoomDesign1/13/2015Dr.KianKaviani-Spring2015-EE-504L261/13/2015Dr.KianKaviani-Spring2015-EE-504L27LaminarAirFlowintheCleanRoom1/13/2015Dr.KianKaviani-Spring2015-EE-504L28Environmental,Health&safetyIssues(EHS)Thesafety–RecordoftheSemiconductorIndustrySemiconductorindustryintheUSisranked4th.highestintermsofitssafetyrecord.Onlyaerospaceandnuclearindustryprovidessimilarwork–exposureenvironment.Thereisaverytightcontrolbythesemiconductorsafetyassociation,theinternationalSEMATECHandEnvironmentalsafetyandhealthcommitteeofthesemiconductorindustryassociation(SIA)1/13/2015Dr.KianKaviani-Spring2015-EE-504L29Safety–HazardsoftheWaferFabHazardousMaterialandPhysicalConditionHazardousProcess–gassesHazardousProcess–chemicals(liquids)Hazardous–Voltages(whichcancauseelectricshock)RadiationHazards(Lasers,X–Rays,DeepUV)FiresHigh–Temperature(whichcancauseburns)Freezing–temperature1/13/2015Dr.KianKaviani-Spring2015-EE-504L30WarningLabels1/13/2015Dr.KianKaviani-Spring2015-EE-504L31MaterialSafetyDataSheets(MSDS)Bylaw,anMSDSmustbeavailableinthefabforeveryhazardous–chemicalsbeingusedinthefacility.MSDSprovidesthefollowinginformation:Chemicalidentity(Commonchemicalnameorthetradename)Ingredients(Listofhazardousmaterialspresentover1%andallcarcinogensover0.1%)ImmediateDangertoLife&Health(IDLH)Thisconcentrationrepresentsamaximum–levelforwhichonecouldbeexposedfor30minuteswithoutcausinganypermanenthealtheffects.Thresholdlimitvalue(TLV)&permissibleexposurelimit(PEL)TLV:15mi