IGBT的工作原理和工作特性

PMT1Head-onSide-on819123456MCPMCPMCP74Ag-O-Cs1%0.1%1Ag-O-CsS-1300-1200nmAg-O-Cs2GaAsCsCsGaAs930nm300-850nm3InGaAsCsGaAs900-1000nmAg-O-Cs4Sb-Cs5Sb-Rb-CsSb-K-CsSb-CsSb-CsNaITl6Na-K-Sb1757Na-K-Sb-Cs930nm8Cs-TeCs-ICs-Te320nmCs-I200nm1300nmK402UV185nm3160nm4115nm4SA/W/QESA/Wnm2856K10-5~10-2Lm10-10~10-5LmCs-ICs-TeA/Lm/2856KCSNo.5-5810-5~10-2LmA/Lm-b/-NaITlNaITl2856KS-1IR-D80AR-68nδδnδδ=A·EαAEαα0.70.8nVµ91210610109110S-1C659C487723“HA”4910520%30%30ENIENIWLmq=Idb=30µ=∆f=1S=//ENIENI10-1510-1611HoutHinµtmmDmm12γγ1415“”103104161µATTS1750nm50nm10%90%TTSFWHM18TTSMCPMCPTTS19R205951mm1220aDCb21aBC2020b1%100ItV22510HA2023HAHA24CcDC25a25b262728PHDPHDLLDULDLLDULDLLDULDPHDHmLLDHm1/3ULDHm3ULDPHD30MCAPHD31NaITlγFe55Cs137Co6032Cs137NaITl-34RLCsfcfcRL-35RLRinR0R0RLRL=RinRL1/23650Ω75Ω37ICIC-38V0V0=-Rf•IpRfV0-Rf•IpIosRfIosV0=-Rf•Ip+IosRf100pAFET39CfRfRf•CfRfRfCfCcRfRfCfRf•CfIGBTIGBTPNPIGBTIGBTIGBTMOSFETNMOSFETMOSFETP+NNNIGBTIGBT1IGBTIGBTUgsUgsUgsIdGTR123IGBTJ2J1N+N+IGBTIGBTIdUgsMOSFETUgs(th),IGBTIGBTIdUgs15VIGBTIGBTPNPBMOSFETIGBTUds(on)Uds(on)Uj1UdrIdRoh214Uj1JI0.7IVUdrRdrRohIdsIds=(1+Bpnp)Imos(215ImosMOSFETN+IGBT1000VIGBT23VIGBT2IGBTMOSFETUdsPNPtd(on)tritontd(on)tritfe1tfe2258IGBTMOSFETPNP,td(off)trvUds(f)Tf259t(f1)t(f2)t(off)=td(off)+trvt(f)216td(off)trv