5S0765C

©2003FairchildSemiconductorCorporation•WideOperatingFrequencyRangeUpto150kHz•LowestCostSMPSSolution•LowestExternalComponents•LowStart-upCurrent(Max:170µA)•LowOperatingCurrent(Max:12mA)•InternalHighVoltageSenseFET•OverVoltageProtectionWithLatchMode(Min23V)•OverLoadProtectionWithLatchMode•OverCurrentProtectionWithLatchMode•InternalThermalProtectionWithLatchMode•PulseByPulseOverCurrentLimiting•UnderVoltageLockoutWithHysteresis•ExternalSync.TerminalTO-3P-5L1.Drain2.Gnd3.VCC4.FeedBack5.Sync.1TO-220-5L1InternalBlockDiagram+--++-+-VCCSoftStart&Sync345VrefVCCUVLO15/9VFeedbackVREFVth.sy7V6V4µAOSCVREFVCC2.5VR0.95mAOLP(Vfb=7.5V)TSD(Tj=160°C)OVP(VCC=25V)OCP(VS=1.1V)1µsWindowOpenCircuitPower-onReset(VCC=6.5V)SRQShutdownLatchVoffsetSRQCLK2.5VBiasVREFUVLO12DrainGNDVSSenseFETRsenseKA5S-SERIESKA5S0765C/KA5S0965/KA5S12656/KA5S1265FairchildPowerSwitch(FPS)KA5S-SERIES2AbsoluteMaximumRatings(Ta=25°C,unlessotherwisespecified)CharacteristicSymbolValueUnitKA5S0765CDrain-GateVoltage(RGS=1MΩ)VDGR650VGate-Source(GND)VoltageVGS±30VDrainCurrentPulsed(1)IDM28ADCContinuousDrainCurrent(Tc=25°C)ID7.0ADCContinuousDrainCurrent(Tc=100°C)ID5.6ADCSinglePulsedAvalanchCurrent(3)(Energy(2))IAS(EAS)27(570)A(mJ)MaximumSupplyVoltageVCC,MAX30VInputVoltageRangeVFB-0.3toVCCVVSS-0.3to8VTotalPowerDissipationPD(WattH/S)140WDarting1.11W/°COperatingJunctionTemperature.TJ+160°COperatingAmbientTemperature.TA-25to+85°CStorageTemperatureRange.TSTG-55to+150°CKA5S0965Drain-GateVoltage(RGS=1MΩ)VDGR650VGate-Source(GND)VoltageVGS±30VDrainCurrentPulsed(1)IDM36ADCContinuousDrainCurrent(Tc=25°C)ID9.0ADCContinuousDrainCurrent(Tc=100°C)ID5.8ADCSinglePulsedAvalanchCurrent(3)(Energy(2))IAS(EAS)25(950)A(mJ)MaximumSupplyVoltageVCC,MAX30VInputVoltageRangeVFB-0.3toVCCVVSS-0.3to8VTotalPowerDissipationPD(WattH/S)170WDarting1.33W/°COperatingJunctionTemperature.TJ+160°COperatingAmbientTemperature.TA-25to+85°CStorageTemperatureRange.TSTG-55to+150°CKA5S-SERIES3AbsoluteMaximumRatings(Continued)(Ta=25°C,unlessotherwisespecified)Note:1.Repetitiverating:Pulsewidthlimitedbymaximumjunctiontemperature2.L=10mH,VDD=50V,RG=27Ω,startingTj=25°C3.L=13µH,startingTj=25°CCharacteristicSymbolValueUnitKA5S12656Drain-GateVoltage(RGS=1MΩ)VDGR650VGate-Source(GND)VoltageVGS±30VDrainCurrentPulsed(1)IDM48ADCContinuousDrainCurrent(Tc=25°C)ID12ADCContinuousDrainCurrent(Tc=100°C)ID8.4ADCSinglePulsedAvalanchCurrent(3)(Energy(2))IAS(EAS)25(785)A(mJ)MaximumSupplyVoltageVCC,MAX30VInputVoltageRangeVFB-0.3toVCCVVSS-0.3to8VTotalPowerDissipationPD(WattH/S)160WDarting1.28W/°COperatingJunctionTemperature.TJ+160°COperatingAmbientTemperature.TA-25to+85°CStorageTemperatureRange.TSTG-55to+150°CKA5S1265Drain-GateVoltage(RGS=1MΩ)VDGR650VGate-Source(GND)VoltageVGS±30VDrainCurrentPulsed(1)IDM48ADCContinuousDrainCurrent(Tc=25°C)ID12ADCContinuousDrainCurrent(Tc=100°C)ID8.4ADCSinglePulsedAvalanchCurrent(3)(Energy(2))IAS(EAS)42(785)A(mJ)MaximumSupplyVoltageVCC,MAX30VInputVoltageRangeVFB-0.3toVCCVVSS-0.3to8VTotalPowerDissipationPD(WattH/S)160WDarting1.28W/°COperatingJunctionTemperature.TJ+160°COperatingAmbientTemperature.TA-25to+85°CStorageTemperatureRange.TSTG-55to+150°CKA5S-SERIES4ElectricalCharacteristics(SFETPart)(Ta=25°Cunlessotherwisespecified)ParameterSymbolConditionsMin.Typ.Max.UnitKA5S0765CDrain-SourceBreakdownVoltageBVDSSVGS=0V,ID=50µA650--VZeroGateVoltageDrainCurrentIDSSVDS=Max.,Rating,VGS=0V--50µAVDS=0.8Max.,Rating,VGS=0V,TC=125°C--200µAStaticDrain-SourceonResistance(1)RDS(on)VGS=10V,ID=4.0A-1.251.6ΩForwardTransconductance(1)gfsVDS=15V,ID=4.0A3.0--SInputCapacitanceCissVGS=0V,VDS=25V,f=1MHz-1600-pFOutputCapacitanceCoss-310-ReverseTransferCapacitanceCrss-120-TurnonDelayTimetd(on)VDD=0.5BVDSS,ID=7.0A(MOSFETswitchingtimeisessentiallyindependentofoperatingtemperature)-25-nSRiseTimetr-55-TurnOffDelayTimetd(off)-80-FallTimetf-50-TotalGateCharge(Gate-Source+Gate-Drain)QgVGS=10V,ID=7.0A,VDS=0.5BVDSS(MOSFETswitchingtimeisessentiallyindependentofoperatingtemperature)--72nCGate-SourceChargeQgs-9.3-Gate-Drain(Miller)ChargeQgd-29.3-KA5S0965Drain-SourceBreakdownVoltageBVDSSVGS=0V,ID=50µA650--VZeroGateVoltageDrainCurrentIDSSVDS=Max.,Rating,VGS=0V--50µAVDS=0.8Max.,Rating,VGS=0V,TC=125°C--200µAStaticDrain-SourceonResistance(1)RDS(on)VGS=10V,ID=4.5A-0.961.2ΩForwardTransconductance(1)gfsVDS=50V,ID=4.5A5.0--SInputCapacitanceCissVGS=0V,VDS=25V,f=1MHz-1750-pFOutputCapacitanceCoss-190-ReverseTransferCapacitanceCrss-78-TurnonDelayTimetd(on)VDD=0.5BVDSS,ID=9.0A(MOSFETswitchingtimeisessentiallyindependentofoperatingtemperature)-2050nSRiseTimetr-2355TurnOffDelayTimetd(off)-85180FallTimetf-3070TotalGateCharge(Gate-Source+Gate-Drain)QgVGS=10V,ID=9.0A,VDS=0.5BVDSS(MOSFETswitchingtimeisessentiallyindependentofoperatingtemperature)-7495nCGate-SourceChargeQgs-12-Gate-Drain(Miller)ChargeQgd-35-KA5S-SERIES5ElectricalCharacteristics(SFETPart)(Continued)(Ta=25°Cunlessotherwisespecified)Note:1.PulseTest:Pulsewidth≤300uS,DutyCycle≤2%2.MOSFETswitchingtimeisessentiallyindependentofoperatingtemperature3.ParameterSymbolConditi