BC807-40W中文资料

DATASHEETProductspecificationSupersedesdataof1997Jun091999May18DISCRETESEMICONDUCTORSBC807WPNPgeneralpurposetransistorbook,halfpageM3D1871999May182PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WFEATURES•Highcurrent(max.500mA)•Lowvoltage(max.45V).APPLICATIONS•Generalpurposeswitchingandamplification.DESCRIPTIONPNPtransistorinaSOT323plasticpackage.NPNcomplement:BC817W.MARKINGNote1.*=-:MadeinHongKong.*=t:MadeinMalaysia.TYPENUMBERMARKINGCODE(1)TYPENUMBERMARKINGCODE(1)BC807W5D*BC807-25W5B*BC807-16W5A*BC807-40W5C*PINNINGPINDESCRIPTION1base2emitter3collectorFig.1Simplifiedoutline(SOT323)andsymbol.handbook,halfpageMAM048Topview213231LIMITINGVALUESInaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).Note1.TransistormountedonanFR4printed-circuitboard.SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVCBOcollector-basevoltageopenemitter--50VVCEOcollector-emittervoltageopenbase;IC=-10mA--45VVEBOemitter-basevoltageopencollector--5VICcollectorcurrent(DC)--500mAICMpeakcollectorcurrent--1AIBMpeakbasecurrent--200mAPtottotalpowerdissipationTamb≤25°C;note1-200mWTstgstoragetemperature-65+150°CTjjunctiontemperature-150°CTamboperatingambienttemperature-65+150°C1999May183PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WTHERMALCHARACTERISTICSNote1.TransistormountedonanFR4printed-circuitboard.CHARACTERISTICSTamb=25°Cunlessotherwisespecified.Note1.Pulsetest:tp≤300μs;δ≤0.02.SYMBOLPARAMETERCONDITIONSVALUEUNITRthj-athermalresistancefromjunctiontoambientnote1625K/WSYMBOLPARAMETERCONDITIONSMIN.MAX.UNITICBOcollectorcut-offcurrentIE=0;VCB=-20V--100nAIE=0;VCB=-20V;Tj=150°C--5μAIEBOemittercut-offcurrentIC=0;VEB=-5V--100nAhFEDCcurrentgainIC=-100mA;VCE=-1V;note1;seeFigs2,3and4BC807W100600BC807-16W100250BC807-25W160400BC807-40W250600DCcurrentgainIC=-500mA;VCE=-1V;note140-VCEsatcollector-emittersaturationvoltageIC=-500mA;IB=-50mA;note1--700mVVBEbase-emittervoltageIC=-500mA;VCE=-1V;note1--1.2VCccollectorcapacitanceIE=ie=0;VCB=-10V;f=1MHz-10pFfTtransitionfrequencyIC=-10mA;VCE=-5V;f=100MHz80-MHz1999May184PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WFig.2DCcurrentgain;typicalvalues.handbook,fullpagewidth025050100150200MBH717-10-1-1hFE-10IC(mA)-102-103VCE=-1VBC807-16W.1999May185PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WFig.3DCcurrentgain;typicalvalues.handbook,fullpagewidth0500100200300400MBH718-10-1-1hFE-10IC(mA)-102-103VCE=-1VBC807-25W.Fig.4DCcurrentgain;typicalvalues.handbook,fullpagewidth0500100200300400MBH719-10-1-1hFE-10IC(mA)-102-103VCE=-1VBC807-40W.1999May186PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WPACKAGEOUTLINEUNITA1maxbpcDEe1HELpQwvREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECEIAJmm0.11.10.80.40.30.250.102.21.81.351.150.65e1.32.22.00.230.130.20.2DIMENSIONS(mmaretheoriginaldimensions)0.450.15SOT323SC-70wMbpDe1eABA1LpQdetailXcHEEvMAABy012mmscaleAX123Plasticsurfacemountedpackage;3leadsSOT32397-02-281999May187PhilipsSemiconductorsProductspecificationPNPgeneralpurposetransistorBC807WDEFINITIONSLIFESUPPORTAPPLICATIONSTheseproductsarenotdesignedforuseinlifesupportappliances,devices,orsystemswheremalfunctionoftheseproductscanreasonablybeexpectedtoresultinpersonalinjury.PhilipscustomersusingorsellingtheseproductsforuseinsuchapplicationsdosoattheirownriskandagreetofullyindemnifyPhilipsforanydamagesresultingfromsuchimproperuseorsale.DatasheetstatusObjectivespecificationThisdatasheetcontainstargetorgoalspecificationsforproductdevelopment.PreliminaryspecificationThisdatasheetcontainspreliminarydata;supplementarydatamaybepublishedlater.ProductspecificationThisdatasheetcontainsfinalproductspecifications.LimitingvaluesLimitingvaluesgivenareinaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).Stressaboveoneormoreofthelimitingvaluesmaycausepermanentdamagetothedevice.ThesearestressratingsonlyandoperationofthedeviceattheseoratanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecificationisnotimplied.Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.ApplicationinformationWhereapplicationinformationisgiven,itisadvisoryanddoesnotformpartofthespecification.©PhilipsElectronicsN.V.SCAAllrightsarereserved.Reproductioninwholeorinpartisprohibitedwithoutthepriorwrittenconsentofthecopyrightowner.Theinformationpresentedinthisdocumentdoesnotformpartofanyquotationorcontract,isbelievedtobeaccurateandreliableandmaybechangedwithoutnotice.Noliabilitywillbeacceptedbythepublisherforanyconsequenceofitsuse.Publicationthereofdoesnotconveynorimplyanylicenseunderpatent-orotherindustrialorintellectualpropertyrights.Internet:–aworldwidecompanyNetherlands:Postbus90050,5600PBEINDHOVEN,Bldg.VB,Tel.[phone],Fax.[phone]NewZealand:2WagenerPlace,C.P.O.Box1041,AUCKLAND,Tel.[phone],Fax.[phone]Norway:Box1,Manglerud0612,OSLO,Tel.[phone],Fax.[phone]Pakistan:seeSingaporePhilippines:PhilipsSemiconductorsPhilippinesInc.,106ValeroSt.SalcedoVillage