PZT薄膜的制备及其与MEMS工艺的兼容性3

2710200610CHINESEJOURNALOFSEMICONDUCTORSVol.27No.10Oct.,20063(:10204021,90207003,90607003)­.Email:[e-mail]2006204205,2006205216Z2006PZTMEMS3­(,100080):2Pt/Ti/SiO2/SiPZT,Pt,,PZTPZT.SEM,XRD,EDXPZT.:PZT;PZT,PZT,PZT;PZT,,PZTMEMS.:PZT;2;;EEACC:2520:TN10412:A:025324177(2006)10217762051(PZT),,[1][2,3][4][5].,(MEMS),PZT.,PZT:2(Sol2Gel)[6](MOD)[7][8](MOCVD)[9](PLD)[10][11].2,;,;;,;,PZT,MEMS.PZT.,MEMS.PZTPZT,PZTMEMS.,.SiO2/SiPt/Ti,2PZT,Au.PZTMEMS.2SiO2/Si(100),.,TiPt,Ti.,,,70030min,.2PZT,,.,,,..,.1.1PZTFig.1FlowdiagramforpreparationofPZTsol©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a)PZTX;(b)PZTXFig.3XRDpatternsofbottomelectrode7771©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a).,,.4(a)PZT;(b)PZTFig.4SEMimagesofthePZTfilms,,,.5(b)(c).,,,,MEMS.5(a);(b),(c)Fig.5Imagesofelectrodesshaped6PZTX.,,PZT.7PZTX.,PZT.,PZT,.,24,018mPZT10s.,PZT,PZT.8PZT.8(a),PZT,PZT,.PZT,6PZTXFig.6XRDpatternsofPZTfilms,PZT,,PZT,.8(b),PZT,8771©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.(a)(b)PZTFig.8ImagesofPZTfilms4SiO2/Si(100)Pt/Ti,Pt/Ti,,,,MEMS,,PZT.2Pt/Ti/SiO2/SiPZT,PZT,,.,PZT,,PZT.[1]PazdeAraujoC,McMillanL,JoshiV,etal.Thefutureoffer2roelectricmemories.DigestofTechnicalPapersofIEEEIn2ternationalSolid2StateCircuitsConference,2000:268,464[2]ZhaoHongjin,RenTianling,LiuJianshe,etal.Fabricationofhigh2qualityPZT2basedpiezoelectricmicrophone.Transduc2ers,2003,1:234[3]YanH,KimES.Corrugateddiaphragmforpiezoelectricmi2crophone.EmergingTechnologiesandFactoryAutomation,1996,2:503[4]TakeshiM,MinoruK,ToshiroH.AnultrasonicmicromotorusingabendingcylindricaltransducerbasedonPZTthinfilm.SensorsandActuators,1995,A50:75[5]YangYi,RenTianling,ZhuYiping.StudyofanovelPZTthinfilmsbasedmicromachinedultrasonictransducerfordistancemeasurement.Solid2StateandIntegratedCircuitsTechnolo2gy,2004,3:1788[6]SoyamaN,MakiK,MoriS,etal.PreparationofPZTthinfilmsforlowvoltageapplicationbysol2gelmethod.Applica2tionsofFerroelectrics,2000,2:611[7]KaoCK,KaoJS,TsaiCH,etal.FabricationofPb(Zr,Ti)O/sub3/opticalwaveguidedevicesonsilicasubstratebymet2allo2organicdecomposition.LasersandElectro2Optics,2003,2:569[8]InoueN,NakuraT,HayashiY.Lowthermal2budgetprocessofsputtered2PZTcapacitorovermultilevelmetallization.Elec2tronDevices,2003,50:2081[9]FunakuboH,NagashimaK.Ferroelectricpropertyimprove2mentofPb(ZrxTi1-x)O3filmsbysourcegaspulse2introducedMOCVD.ApplicationsofFerroelectrics,2000,1:67[10]FujitaH,GotoS,AgataS,etal.Controlofcrystallinestruc2tureandferroelectricpropertiesofPb(ZrxTi1-x)O3filmsbypulsedlaserdeposition.InternationalMicroprocessesandNanotechnologyConference,2000:276[11]KiduchiT,TsurumiT,OhbaY,etal.Bendingactuatorusingliadzirconatetitanatethinfilmfabricatedbyhydrothermalmethod.JpnJApplPhys,1992,31(9B):30909771©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.­,WangChenghao,HuangXin,andXuLian(InstituteofAcoustics,ChineseAcademyofSciences,Beijing100080,China)Abstract:SiliconbasedPZTfilmsarepreparedbythesol2gelprocess.Theelectrodesareshapedwiththelift2offtechniqueandannealing.ThePZTfilmsarepatternedbychemicaletchingbeforecrystallizationannealing.TheelectrodesandPZTfilmsareanalyzedbySEM,EDX,andXRD.Theresultsshowthatthefilmsareintheperovskitephase.Thepatterningprocessimprovesconditionsofphotolithographyandetching,enhancesqualitiesoffiguresofelectrodesandPZTfilmswith2outreducingtheirperformance.ThepatterningtechnologyofelectrodesandPZTfilmsdoesnotrequirealongchemicaletchingprocessandimprovesthecompatibilityoffabricationofPZTfilmswithMEMS.Keywords:PZTfilms;sol2gelprocess;compatibility;patternEEACC:2520ArticleID:025324177(2006)10217762053ProjectsupportedbytheNationalNaturalScienceFoundationofChina(Nos.10204021,90207003,90607003)­Correspondingauthor.Email:[e-mail]5April2006,revisedmanuscriptreceived16May2006Z2006ChineseInstituteofElectronics0871©1994-2006ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.