不错的OLED结构及工艺简介

OLEDTechnologyOLEDTechnologyDavidHsiehContents••OLEDDevelopmentStatusOLEDDevelopmentStatus¾¾KeyMilestoneKeyMilestone¾¾Resolutionvs.SizeResolutionvs.Size¾¾AMandPMDevelopmentDisplayAMandPMDevelopmentDisplay••MaterialsStatus:Polymervs.SmallMoleculeMaterialsStatus:Polymervs.SmallMolecule¾¾EfficiencyProgressEfficiencyProgress¾¾LifetimeProgressLifetimeProgress••Tech.StatusofOLEDColorpatterningTech.StatusofOLEDColorpatterning••PendingIssuesinOLEDPendingIssuesinOLED¾¾OutOut--couplingEfficiencycouplingEfficiency¾¾LifetimeDifferentialAgingLifetimeDifferentialAging¾¾LTPSNonLTPSNon--UniformityforAMOLEDUniformityforAMOLED••ConclusionConclusionOLEDDevelopmentStatus‰KeyMilestoneofOLEDDevelopment1995199920002002Pioneer,PM-95Pioneer,PM,4AreaColor-995.7”PM-OELDIdemistu-97MotorolaCellularPhone-00CDT-SeikoEpson2.5”AMPLED-00Sanyo-Kodak2.4”AMOLED-99Sony13”SVGAAMOLED-01Samsung15”XGAAMOLED-01KodakDigitalCamera-03Chi-Mei&IBM20”WXGAa-SiAMOLED-03OLEDDevelopmentStatus‰PMCommercializedDisplays¾PMMobilePhone(SmallMolecule)Motorolla(Pioneer)Samsung(SNMD)LG(Pioneer)OLEDDevelopmentStatus‰SamsungNECMobileDisplay(SNMD)PMOLEDProductsCurrentProduct1.1”94×64Dots,256ColorAnycall(SEC)SubDisplayMassProductionfrom2002.JulyNextProduct9664+IconAreacolor969665kcolor9664+Icon256colorType1Type2Type3MobileMonoPMOLEDMobileFullColorPMOLEDMobileS/M*AMOLEDFlexiblePolymerAMOLEDLargeS/M*,PolymerAMOLED*S/M:SmallMoleculeNow&Near-term•Cellphones(subdisplay)•Autodisplays•audio,meters,appliancesNextStepNextStep••Cellphones(maindisplay)Cellphones(maindisplay)••PDAsPDAs••Smallvideo(DVC,DSC)Smallvideo(DVC,DSC)Final&LongTerm•MobileApplications(Flexible)•Monitors•TVs~2001~2003~2004~2007~2009ApplicationsofOLEDGlassClean&BakeAZ5214BusMetalPRCoat&BakeBusMetalPRThickness(1.7µm)BusResistExpose(Mask#1)BusResistDevelopBusCD&InspectBusEtchandInspectBusPRStrip,Inspect&CDDehydrationBakeITOPRCoatandBakeITOPRThickness(1.7µm)ITOResistExpose(Mask#2)ITOResistDevelopITOCDandInspectITOEtchandInspectITOPRStrip,Inspect&CDDehydrationBakeAZ5206-EBasePRCoatandBakeBasePRThickness(0.6µm)BaseResistExpose(Mask#3)BaseResistDevelopBaseCDandInspectBaseCure-HotPlateAZ5214PillarPRCoat&BakePillarPRThickness(1.7–3.7µm)PillarPRExpose(Mask#4)PillarPRPostExposureBakePassiveMatrixDisplays:ProcessFlowContinue380x470glass\ITO\CrpanelsstartContinuePillarPRFloodExposurePillarPRDevelopPillarCDandInspectOvenHardBakeDehydrationBakeO2/CFxPretreatmentHoleTransportLayer(8min)GreenEmissionLayer(3min)ElectronTransportLayer(2mins)ElectronInjectionLayer(0.83min)Cathode(0.83mins)EncapsulationCoverCleanDesiccantDispenseSealEpoxyDispenseLaminationUVCurePostCureBakeScribe&Breaktofinalsize.ProbeTest:O/S,LogJrb,Lum,CIEAssemblyFinalTestSample:Aging/FadeTestOutgoingQCShipPassiveMatrixDisplays:ProcessFlow(continued)ProcessSpecifications:MaterialsSubstrates:Glass\ITO\Mo-Ta•Glass:380x470,0.70.03mm,novisibledefectsunder10Klux•ITO:20-30Ohms/square,75075Å,85%Transmissionat400to760nm,..Roughness50Å,Max.PeakHeight200Å.•BusMetal:0.3Ohms/square,5000500Å.Resist•PhotoresistforPillars(CathodeIsolation)andBase(CathodeInsulation)needstobemorphologicallystableuponbaking.Layerthicknessshouldbecontrollableto0.5(base)and1.5-4µm(pillars).ThinFilms•Organics:Purity95%(zonesublimed/purified)•Metals:Purity90%Encapsulation•EpoxySeal:+0.5Waterabsorptionwhenboiledfortwohrs,lessthan5.0g/m2waterpermeabilityfor24hrs,40µg/goutgastrapping1200Cx15mins.ProcessSpecifications:PhotoFacility:Class100CleanRoomITO:TheminimumgapbetweenITOconductorsshallbe12.5µm,theminimum.leakageresistancebetweenneighboringITOlinesshallbe1Mohm.Base:•Thickness:0.5to0.6µm•12(VGA)to4µm(mono)•SpinSpeed~3000RPM•SoftBake~900C/90secs•HardBake~2500C/200secsPillar:•Thickness~4µm•8(VGA)to12µm(mono)•SpinSpeed~3000RPM•RetrogradeAngle~45/700C•Minimumlinewidthat45/700C~12/8µm•UVCure~~90mJ/cm2,200to400nm/90secs@1100CProcessSpecifications:ThinFilmsVacuumLevels:•BufferChamber1E-6Torr•OrganicChamber(s)5E-7Torr•Electrode6E-6TorrDepositionRates/Temperatures:•Organics2-4Å/sec/270-5000C•Dopants0.05-0.1Å/sec/270-5000C•Electrode0.1&20Å/sec/500-10000CThicknessUniformity:•Organics10010%•Electrode10020%DeviceStructures:•ITO\HI\HTL\Host:Dopant\ETL\EIL\Cathode,where•HI:IDE406orCuPC•HTL:IDE320orHT2•Green/RedHost:AlQ3,BlueHosts:KBHorIDE120•Dopants:KBD,orIDE102(B),C545T(G),DCJTBorP1(R)•ETL:AlQ3•EIL:LiForAl:Li,0.5to20nm•Cathode:Al,70to150nmPillarProcessOLEDMaterialsStatus‰EfficiencyStatusofSmallMolecule5~6@300cd/m20.60,0.38Red20~22@600cd/m20.27,0.63Green5~6@300cd/m20.65,0.3514~15@300cd/m20.61,0.38RedPh.OLED5~6@200cd/m20.14,0.14Blue12~13@600cd/m20.30,0.65Green2~3@300cd/m20.64,0.36Fl.OLEDMaterialsEfficiency[cd/A]ColorIndexBlue(0.16,0.32)Green(0.30,0.63)NTSCsRGBRed1(0.61,0.38)Red2(0.65,0.35)¾¾Condition:1000cd/mCondition:1000cd/m22@4.5~5.5V@4.5~5.5VOLEDMaterialsStatus‰LifetimeProgress~10,000@800cd/m20.61,0.36Red~10,000@400cd/m20.14,0.14Blue~10,000@800cd/m20.65,0.34Phosphorescence~10,000@600cd/m20.27,0.63Green--BlueFluorescenceMaterials~10,000@500cd/m20.63,0.38RedLifetime(t½,D/CConstantCurrent)ColorCoordinates(x,y