精益生产管理方式

1,1,2(1.,361005;2.,361005):SnO2,,SnO2,:SnO2;;:TN3041055:A:167124776(2003)07/0820189203StudyonsputteringprocessoftinoxideFENGHai2yu1,HUANGYuan2qing1,FENGYong2jian2(1.DepartmentofMechanical&ElectronicEngineering,XiamenUniversity,Xiamen361005,China;2.PenTungSahMEMSResearchCenterofXiamenUniversity,Xiamen361005,China)Abstract:SnO2istheoneofgas2sensitivitymaterialsthatareusedtheearliestandthemostwidely,gas2sensitivitysensorsmadeofthismaterialhavemanyadvantages.Basedonthesimpleintroductionofthecourseofsputteringfilmplatingandcharacteristic,thepreparationflowisintroducedindetail,theeffectsofpowerortemperaturechangingonthefilmqualityareanalyzed.Keywords:SnO2film;sputteringpower;substratetemperature1,SnO2[1],SnO2,[2]SnO222.11),,,,,,,2),,,,,,,,:2003205215981MicronanoelectronicFechnology/JulyAugust200320037/8©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.),,,,,,,,,2.2,,,,,,3SnO23.13.1.1Si1)70%30%67h2)5min,50,;,,40Hz3)5min4)5min5)5min6)(NH4OHH2O2DI=125)751015min,DI:;,7)(HClH2O2DI=125)751015min,8)N2,10030min9)3.1.2:1)70%30%67h2)5min3)5min4)5min5)6)N2,10030min7)(K2Cr2O7H2SO4)3.2SiO2,,,22,10001h,SiO2,600nm3.3SnO2JC50023/D,,3070mm,13.56MHz,810-5Pa,10-4Pa,,,1.4W,201.5(SiO2),99.999%Sn,99.999%99.999%,,3Pa,,,,400r/min,,,,,0.75Pa,09120037/8MicronanoelectronicFechnology/JulyAugust2003©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.:Ar2/W500.75136344:103200WT/150180200Ua/V100010301000Ia/A0.250.250.25V/V360370370C1120140120140120140C2550600550600550600176.78182.08176.78/0.880.910.884180T/W150200250Ua/V85010301150Ia/A0.240.250.28V/V320370420C1120120140120140C2600550600550600144.25182.08227.69/0.960.910.91,2.83.0Pa;4SnO2411,,,,,,,,,,,,,,,,412,,,,,,,C,5SnO2,Sn,SnO2SnO2,,,:[1],,,.[J].,2002,7:126.[2],,,.[J].,2000,15(6):106721072.:(19792),,,,20027,9,191MicronanoelectronicFechnology/JulyAugust200320037/8©1994-2008ChinaAcademicJournalElectronicPublishingHouse.Allrightsreserved.