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237Vol.23,No.720027CHINESEJOURNALOFSEMICONDUCTORSJuly,20022001207204,2001209228c2002(,100084):,,MOSPAD,MOSPAD.,FIB,.:;;;MOSPAD;FIBEEACC:B2570A;C1180;C7410D:TN405:A:025324177(2002)07207722051,.,,,,.,,1.,,.,,.,.,,.,,.,,,,.,,.DOE/Opt2,Saxe2na3,Vista4.2,,,IonIoffRout..,,,,.,,,.,.,,,.,.,.,.,.,5.,.,,,,.,,..3,.,.,,.,,.,,,.,,,..,,,(thermalbud2get)6,7.,.,,,.,.,RTA,,,.4,(modelingandsynthesissystemforprocessanddevice,MOSPAD).MOSPADjava,,SolarisHPWindows.,,,.,MOSPAD,.,,,,.,,,.,,.,013m,0107m.MOSPAD(RSM),.5MOSPADMOS.L0135m,Xj011m,Tox01007m,Nsub51016cm-3.Ion(Vd=115V,Vg=115V)Ioff(Vd=115V,Vg=0V),(Rout=dVd/dIdatVd=115V,Vg=115V),1.,,p+,FIB2MOS8.2.3777:1Table1InitialdevicecharacteristicsParameterValueUnitIon7114910-4A/mIoff1170910-7A/mRout63801782Table2DesireddevicecharacteristicsParameterObjectivevalueUnitIon210-4A/mIoff10-13A/mRout105,:D,Xstart,Xspan,YpeakLc.,,Xspan0101m.DXstartYpeakLc.,YpeakLc,,:Lc=0117746-0115492eYpeak/0144417(SUPREM9).3.3Table3DesignspaceofdeviceParameterMinMaxUnitXstart0105013mD510ll51013cm-2Ypeak01010105mLc0117746-0115492eYpeak/0144417m1().1Fig.1Resultofdevicesynthesissystem6MOSPAD0135m.:(1),(2),(3).,,,.0103m.,,.,:,.23.,,.2,,2Fig.2Comparisonofdifferentimplantingdose3Fig.3Comparisonofdifferentimplantingenergy47723.3,.,,,,.,,.:61016cm-3,319m.,4.4Talbe4Synthesisresultoffirsttime/cm-2//min/cm-3/m719310121138192441461021016318871961012113911248166100101631907190101211381924418610110163188,.,.1150,.5.5Talbe5Finalsynthesisresult/cm-2/min/cm-3/m7191101219719751991016318971921012198160519910163189,.:7191012cm-2,1150,200min.4Fig.4Processsynthesisresult4.7MOSPAD,,.,(SPS).1]HosackHH,MozumderPK,PollackGP.Recentadvancesinprocesssynthesisforsemiconductordevices.IEEETransElectronDevices,1998,45(3):6262]BoningDS,MozumderPK.DOE/Opt:asystemfordesignofexperi2ments,responsesurfacemodeling,andoptimizationusingprocessanddevicesimulation.IEEETransSemicondManuf,1994,7(2):2333]SaxenaS,BurchR,VasanthK,etal.Anapplicationofprocesssyn2thesismethodologyforfirst2passfabricationsuccessofhigh2perfor2mancedeep2submicronCMOS.IEDM,1997:1494]PlasunR,StockingerM,SelberherrS.Integratedoptimizationcapabil2itiesintheVISTAtechnologyCADframework.IEEETransComput2AidedDesIntegrCircuitsSyst,1998,17(12):12445]YangZhilian,ShenMing.MethodologyofVLSIdesign.Beijing:Ts2inghuaUniversityPress,1999,..:,19996]SongS,KimWS,HaJM,etal.Highperformancetransistorswithstate2of2the2artCMOStechnologies.IEDM,1999:4277]MorifujiE,OhishiA,MiyashitaK,etal.An80nmdual2gateCMOSwithshallowextensionsformedafteractivationannealingandSALI2CIDE.IEDM,1999:6498]ShenCC,MurguiaJ,GoldsmanN,etal.Useoffocused2ion2beamandmodelingtooptimizesubmicronMOSFETcharacteristics.IEEETransElectronDevices,1998,45(2):4539]TMASUPREM4usersmanual.TechnologyModelingAssociatesInc,19955777:DeviceandProcessSynthesisofSemiconductorLuYong,XieXiaofeng,ZhangWenjunandYangZhilian(InstituteofMicroelectronics,TsinghuaUniversity,Beijng100084,China)Abstract:Withthemethodologyofprocesssynthesis,apracticaltop2downdesignmethodprocessanddevicearepresented.Andprocesssyn2thesissoftware,MOSPAD,whichimplementedthisidea,isalsoprovided.Theideaandmethodindevicesynthesisandprocesssynthesisarein2troduced.DesignofFIB2MOSFETisactedasanexampleofdevicesynthesis.Andprocessmoduleofwellformationisactedasanexampleofprocesssynthesis.Itisprovedthistechnologycanbeusedinresearchofdeviceandprocess.Keywords:synthesis;devicesynthesis;processsynthesis;MOSPAD;FIBEEACC:B2570A;C1180;C7410DReceived4July2001,revisedmanuscriptreceived28September2001c2002TheChineseInstituteofElectronicsArticleID:025324177(2002)072077220567723