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3,,,(,361005):,25nm,:,:;;;:TP212:B:1000-9787(2004)02-0074-03Twofabricationprocessesofmicro2tipWANGMing2liang,WANGYan2hua,ZHENGJian2ming,SUNDao2heng(DeptofMechandElecEngin,XiamenUniversity,Xiamen361005,China)Abstract:Serialpyramidtipswhosediametersaresmallerthan25nmaredesignedandfabricated,utilizinganisotropicetchingcombiningwithbandingandanisotropicetchingcombiningwithelectroplatingrespectively.Itisprovedthatthesearetwoeffectiveprocessestofabricatemicro2tipwithwellcontrollabilityandlowprocessingrestriction.Thesuccessofthefabricationofmicro-tipprovidesanewkindofpotentialmeasuringmodeforsensorminiaturization,whichimprovestheirsensitivitygreatly.Keywords:micro2tip;anisotropicetching;bonding;electroplating02080,(SPM),(STM)(AFM)(MFM)(SNOM)[1],[2],,[3]SiSi3N4,,Si;Ni,Si11.1(1)P100ÉÃ50mm,110010min,2h,10min,700nmSiO21(a),[4];(2)3500r/min30sSiO2SJR1805(),8515min,KarlsussMA61003.8s,0.5%NaOH3s,14015min,1(b);(3)BHF()6min,:2003-08-25:(A0110003);(2002H022)47(JournalofTransducerTechnology)2004232SiO2,5min,5min,,,SiO21(c);(4)75TMAH20min,5min,BHF6minSiO2,5min,,1(d);(5),,LPVCD100nmSi3N41(e);(6)Prex7740(:=7:3)24h,5min,,24h,10min,,18030min,,390,10min,100V,5min,,,1(f);(7)80100TMAH8h,Si3N4Si,5min,,1(g)1Fig1Processofanisotropicetchingcombiningwithbonding1.2(1)(1)(4);(2)10nmTi,100nmCu,2(a);(3)18mNi2(b);1,5530mA/cm2pH4,0.59m/min,30min,18m;(4)80100TMAH8h,Si,5min,,2(c)2Fig2Processofanisotropicetchingcombiningwithelectroplating1Tab1Componentsofelectroplatingsolution300g/L45g/L35g/L2g/L0.2g/L0.2g/L2-5mol/L23,4SEM,:,,111,11110054.74[5],,5m10m3.53m7.07mOlympus5m10m3.78m7.83m15m,,SiO24(b)(100),,,,,100572:,,,3SEMFig3SEMpicturesoftipsutilizinganisotropicetchingcombiningwithbonding3:,3(d)25nm(,Si3N4,SEM1nm)SEMSi3N4TMAH,TMAHTi,Si3N4,4SEMFig4SEMpicturesoftipsutilizinganisotropicetchingcombiningwithbonding3,,25nm,;,;,,:[1]SangHLee,SeungSLee,JongUpJeon,etal.FabricationofaZnOPiezoelectricCantileverwithaHigh2Aspect2RatioNanoTip[A].Kyoto:IEEE,2003.72-75.(79)67232.3,,RC(3),,R=1000,C=50pF,45.03710-8,0.78%,,1(1%)4Fig4Responsecurvefitofsystemstep1Tab1Fittingcapacitanceundervarianttemperatures()-50050100150200250300350()803.071000.001193.951385.001573.151758.401940.742120.192296.73(pF)50.3649.9649.5050.1550.1950.4550.3049.4649.791,1%,UO(t),RC,R,C,C5350,,(2),,,,2%5Fig5Relationcurveofpressureandcapacitance2Tab2Experimentdataofpressureandcapacitance(kPa)27.57955.15875.842110.316165.472186.158(pF)24.532.435.839.542.843.1(pF)24.831.835.039.243.043.53,:[1],,,.SiC[J].,2001,20(2):1-3.[2].[M].:,1997.53-55.[3],.MEMS[M].:,2002.165-167.:(1972-),,,1995,,,(76)[2]RongRong,Jin2WooChoi,ChongHAhn.AFunctionalMagneticBead/BioCellSorterUsingFullyIntegratedMagneticMicro/NanoTips[A].Kyoto:IEEE,2003.530-533.[3].[J].,2000,5(1):106-108.[4].[M].:,1997.61-64.[5]ElwenspoekM,JansenH.SiliconMicromaching[M].UK:Cam2bridgeUniversityPress,1998.9-11.:(1980-),,,,20017,,972: