玻璃蚀刻工艺

1EtchingProcess2Contents‰EtchingIntroduction‰DryEtchingProcess‰WetEtchingProcess‰CleaningProcessIntroduction‰Summary‰EtchingIntroduction3‰EtchingIntroduction(1)(2)(3)(4)(5)DryorWet(6)Wet4EtchProfile5DryEtchvs.WetEtch„ComparisonofEquipmentUp-TimeThroughputRunningCostFootPrintInitialCostComparisonofEquipmentHighLowHighLowHighHighLargeSmallLowHighWetetchDryEtch6DryEtchvs.WetEtch„ComparisonofProcessMultiLayerEtchProfileControlSelectivitytoUnderLayerCDLossRepeatabilityUniformityEtchRateComparisonofProcessVeryPoorGoodGoodPoorPoorGoodLargeSmallDifficultPossiblePoorGoodHighLowWetetchDryEtch7EtchingMechanism18EtchingMechanism29Contents‰EtchingIntroduction‰DryEtchingProcess‰WetEtchingProcess‰CleaningProcessIntroduction‰Summary‰DryEtchingProcess10DryEtch–WhatisPlasma?-•Aplasmaisa“quasi-neutral”gasofchargedandneutralparticleswhichexhibits“collectivebehavior”.-(Ion)(Radicals)„Plasma11DryEtch–WhatisPlasmaetch?•Plasma:RFPower/ElectrodeSpace/LowPressure12NonmetallicEtchingFilmEtchantSelectivitySF6/O2CF4/O2Cl2/O250:1-SiHBr/O2100:1SF6/O2CF4/O2NF3/O2SiNxCHF3/CH2F2/O2CF4/O2CHF3/O2TEOS&SiOxC4F8good13MetallicEtchingFilmEtchantAl&TiBCl3/Cl2BCl3enhancetheetchabilityofmetaloxideininitiateetchingCrCl2/O2ResidualCl2exposureinatmospherichumiditytoformHCl,whichcorrodethemetal.SF6/CF4/O2MoW&MoCl2/O2CH4/H2Cl2HIITOHBr14SiOxmechanism15WhataretheconcernsforDryetching„Uniformity&Etchingrate„Taperprofilecontrol„CDlosscontrol„Selectivity„Plasmadamage„PRremoval„Residue„EPDcontrol16TaperProfileControl17TaperProfileControl18TaperProfileControl19TaperProfileControl„Stepcoverage20TaperProfileControl„Taperingfeaturebyresisterosion21CDLossControl„CriticalDimensionLoss10um9umCDLoss1umCDLossControlTaperTaperCDLoss22Selectivity23PlasmaDamage„PRafterImplantation24PRRemoval„PRRemovalIssueIondopping(sliceashing)25Residue•PRUn-removablePR/Alhillocks26EPDControl•EndPointDetectorOpticalEmissionSpectroscopy27EPDControl„PressureandBiasChange28PlasmaEtching„DryEtchParametersEffectsofPressureEffectsofFrequencyEffectsofTemperatureEffectsofRFPower29TheEffectsofPressure30TheEffectsofFrequency31TheEffectsofTemperature32TheEffectsofPower33Summary•Processstabilityandrepeatedly•Differentlayeretch•Contactholeetch•PRFullyAshing•HDPDeveloping„FutureTasksforEtchingProcess34TFTEtchingEquipment„ComparisonofPlasmaSource35DryEtcher450E&HAI36PlasmaEtching•ComparisonofCCPvs.HDP37PlasmaEtching•Advantageoflowpressurehighdensityplasma38DryEtcher450E39DryEtcher450E„TransformerCoupledPlasma40DryEtcher450E„Antenna41DryEtcher450E„„PP--ChuckChuck42DryEtcher450E„„PP--ChuckChuckHeliumBackSideCoolingHeliumBackSideCoolingHeGasPlasmaHeatingCoolingStagePlasmaHeatingCoolingStageGlassResistDamage(PRBurning)ResistNoDamageElectrostaticChuckGlass43DryEtcherHAI„CapacitiveCouplingPlasma44DryEtcherHAI45DryEtcherHAI46DryEtcherHAI„PianoReactor47InductiveCoupledPlasmaandMicrowave48Contents‰EtchingIntroduction‰DryEtchingProcess‰WetEtchingProcess‰CleaningProcessIntroduction‰Summary‰WetEtchingProcess49WetEtchingPrinciple(1)(2)(3)•50•a.EtchRateb.Uniformityc.Repeatabilityd.CDLosse.SelectivitytoUnderLayerf.ProfileControlg.MultiLayerEtchWhataretheconcernsforWetetching51WetEtchParameters(1)(2)(3)(4)N2BubbleUltrasonic„Undercut52„(1)„(2)MassTransfer53•(1)OxideEtchinga.SiO2b.BOE*HF*NH4F54a)HNO3AlCH3COOHAlH3PO4b)c)HNO3•(2)MetalEtchinga.Al*ITO*b.PAEH2C2O4AlH3PO4CH3COOHHNO3H2O72%15%8%5%55ITOITOa)b)ITOc)Damagedd)Profile56a)DissolveLikeAcetonePhenolGroupb):a)b)CO2H2SO4AttackMetal(3)PRRemovea.ICTFTb.**57a.Ionshowerb.c.d.SliceAshingPRRemovalIssue58—„ParticleIssueFilter59(1)SC1NH4OHH2O2DIWSC2HClH2O2DIWHFBOE(2)H2SO4(3)(4)Chamber60Contents‰EtchingIntroduction‰DryEtchingProcess‰WetEtchingProcess‰CleaningProcessIntroduction‰Summary‰CleaningProcessIntroduction61WhatIsTheMeaningofCleaningSubstrateClean-processEnvironmentCleanMethodParticleRemoveParticleAvoidParticleSticking„DIWChemicalCleaning62a.SC1NH4OH+H2O2+H2OParticleb.SC2HCl+H2O2+H2OParticlec.SPMH2SO4+H2O2OrganicParticleSC1SC2H2O2SPMSOMH2SO4+O3CleanH2SO4UnderlayerdamagedCleaningDIO3CO2H2O63InfluenceTypeParticulateMetalParticleOrganicParticleRoughnessNativeOxideGate-oxideBreakdownVoltage,ReliableGate-oxideBreakdownVoltage,ReliableGate-oxideQualityGate-oxideBreakdownVoltage,MobilityGate-oxideQuality,ContactResistantWhatEffectsDevice64SourceTypeParticulateMetalParticleOrganicParticleRoughnessNativeOxideEquipment,Environment,ChemicalEquipment,Chemical,Water,ProcessPhotoresistResidule,ChemicalProcessChemicalChemical,Environment,WaterSourceofUnwantedSubstance65WetCleaningStepsChemicalRemoveStepAPM(SC1)HPM(SC2)DHFSPMSOMDIO3NH4OH/H2O2/H2OHCl/H2O2/H2OHF/H2OH2SO4/H2O2H2SO4/O3O3/H2OParticulates&Organic&MetalMetalNativeOxide&MetalOrganic&MetalOrganic&MetalOrganic&MetalAPM:AmmoniumHydroxide/HydrogenPeroxide/MixedWaterHPM:HydrochloricAcid/HydrogenPeroxide/MixedWaterSPM:SulfuricAcid/HydrogenPeroxide/MixedSOM:SulfuricAcid/Ozone/Mixed66TraditionalRCA-cleanFlowchart1234567ParticulateRemovalDiscussion‰RemovalMechanism-Oxidization,Etching,Lift-off‰Solutions-APM(NH4OH/H2O2/H2O)‰AvoidAdhesion-Hi