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163Vo1116No13MaterialsScience&Engineering63Sept.1998,200437,SEM,,,StudyontheTechnologyofPreparationofGraphiteRaschigRingYanGuoqiangZhouHailiShanghaiResearchInstituteofmaterials,MMIShanghai200437AbstractThepreparationofgraphiteRaschigringbyasinteringprocessusingthecolloidalgraphiteasmainrawmaterialisreportedinthispaper.Effectsoftheadhesiveused,thetechnologyoftheformingprocessandheattreatmentprocessonthecharacteristicsofgraphiteRaschigringwerestudiedthoroughly.ThestructureofgraphiteRaschigringwasanalyzedbySEM.ItisprovedthatthepropertiesofthegraphiteRaschigringpreparedinourlaboratoryarebetterthanthoseoftheimportedproducts.KeywordsColloidalGraphite,PhenolicResin,SinteringTechnology,PreparationofRaschigRing.,(),[1],[2],,,,,,11,,:2112GB6804-86073CM121120003000,,1CMC,[3],1CMC,MPa2.03.23.95.86.7,,22,%,MPa,%511.412.613.813.612.11017.516.519.618.917.619.125.71525.224.325.632.923.521.521.52024.128.424.132.633.317.016.420326.823.231.134.832.29.87.5203325.824.532.235.627.117.116.12521.521.821.228.419.824.324.63014.718.114.917.717.523.126.031.424.323.816.415.8310%;331%2,,,21,,,,,80,3,,,33,h,MPa324487217212.517.219.325.832.818.516.218.924.527.516.618.916.532.238.516.319.616.635.624.514.619.320.027.731.731,,,(10MPa),,;(20MPa),,12MPa41TAS100-,1,400,(4),,21TG-DTA251PhilipsCM12,3,,(4)174MPa20030.5h40031h65031h13.211.810.914.59.620030.5h40031h95032h17.517.714.916.519.820030.5h40031h100032h24.126.823.231.134.220030.5h40031h125032h24.426.225.624.332.93SEM()2804SEM()2801;2;31,,,,,1991;2542,,,45;723,,,,1996;14(2):6(41)2NishinoS,etal.,Appl.Phys.Lett.,1983;42(5):4603HoffmanL.etal.,J.Appl.Phys.,1982;53:69624TohdaT.etal.,J.Electrochem.Soc.,1980;127:445Nagait,etal.,J.Phys.E,1982;15:5206KimHJ,DavisRF.J.Electronchem.Soc.,1986;133(11):23507ChezzoM,etal.,IEEETrans.,1992;EDL213:6398DmitrivVA,etal.,Electron.lett.,1988;(24):10319D.Alok,etal.,IEEEElectronDeviceLett.,1994;15(10):39410P.G.Neudeck,etal.,Appl.Phys.Lett.,1994;64(11):138611O.Kordina,etal.,Appl.Phyts.Lett.,1995;67(11):156112SugiiT,etal.,J.Electrochem.Soc.,1987;134:254513SugiiT,etal.,IEEETrans.,1990;ED237:233114CharlesE.Weitzel,etal.,IEEETransactionsonElectronDevice,1996;43(10):173215K.Xie,etal.,IEEEElectronDeviceLett.,1996;17(3):14216KelnerG,etal.,IEEETrans.,1989;ED236:104517jayaramaN.Shenoy,etal.,IEEEElectronDeviceLetter5,1997;18(3):9318C.E.Weitzel,etal.,IEEEElectronDeviceLett.,1995;16(10):45119S.Sriram,etal.,IEEEElectronDeviceLett.,1996;17(7):36920KarenE.Moore,etal.,IEEEElectronDeviceLett.,1996;18(2):6921NittS.R.,etal.,Appl.Phys.Lett,1987;50:20327