阿特斯面扫描设备联合分析低效片

面扫描设备联合分析低效片研发中心黄洁2010-9-13背景简介测试分析分析结果结论背景介绍造成电池片的效率低下大致可以分为两种：来料不良和制程不良。如何细分具体的低效片？可以有效地帮助我们减少低效片的产生，提升良率，达到降本增效的目的。我们选取不同类型的各类多晶156低效电池片进行分析，对电池片进行整片mapping，通过WT2000、Suns-Voc、EL等机器进行分析，确定不同低效片产生的原因，并据此分析归类。测试分析（第一组）NumberUocIscRsRshFFNCellIrev110.6139777.7616360.02501750.8560353.179810.1041490.82728420.6081267.660820.04640256.2761536.637310.0701450.89865230.6122758.142190.0171754.06326160.535970.1240245.428784电性能参数：测试分析将电池片首先进行EL测试，加正向偏压，通10A电流，测试结果如下所示；从图中可以看出：电池片整体区域的EL较差，部分区域全黑，说明这些区域的整体发电效率低下。测试分析EL测试机通过加反偏电压，测得Hot-Spot结果如下所示；从图中可以看出：2、3号片的亮点较多，这也与其效率低下相应。测试分析测试分析Version3.14SampleNameJsc(A/cm²)NumberofCellsTemp.(°C)FittedRsh(Wcm²)FittedJ01(pA/cm²)FittedJ02(nA/cm²)SumofSquares1SumofSquares2Width(cm)Resistivity(Ohm-cm)RefwaferV/sunlow13.45E-02125.811412.19643.42416.8847.670.021.5p-typeGeneralized0.0784889Voc(V)Vmp(V)Jmp(A/cm²)PFFPseudoEfficiencyApparentRs(Ohmcm²)Rshl.boundOhm-cm²Ideality(n)@0.1sunVoc@0.1sunJ01(A/cm²)J02(A/cm²)SumofSquaresDateTimeLogtoSummaryIdeality(n)@1sun0.6030.5160.0320.78916.4270.054536.9761.650.5272.2E-124.3E-084.77E+0123-Aug-101:43PMNotLogged1.05PseudoLightIVcurvewithouttheeffectofRs00.0050.010.0150.020.0250.030.0350.040.000.100.200.300.400.500.600.70Voltage(V)Current(A/cm2)0.0000.0090.019PowerDensity(W/cm2)0.000.010.101.0010.000.00000.10000.20000.30000.40000.50000.60000.7000Voltage(V)LightIntensity(Suns)MeasuredDataDoubleDiodeFitIlluminationatReferenceCellandTestCellVoc0.0010.0100.1001.00010.0000.00E+002.00E-034.00E-036.00E-038.00E-031.00E-021.20E-021.40E-021.60E-02Time(sec)LightIntensity(Suns)00.10.20.30.40.50.60.7CellVoltage(volts)LightIntensityOpen-CircuitVoltageEffectiveLifetime,upperbound(AccurateforcellwithgoodBSF,LW,NA,W)0.00E+002.00E-064.00E-066.00E-068.00E-061.00E-051.20E-051.00E+121.00E+131.00E+141.00E+15carrierdensity(cm-3)EffectiveLifetime(s)LogtoSummaryMeasureCellFitIVCurvetoggletypeAnalysisType测试分析Version3.14SampleNameJsc(A/cm²)NumberofCellsTemp.(°C)FittedRsh(Wcm²)FittedJ01(pA/cm²)FittedJ02(nA/cm²)SumofSquares1SumofSquares2Width(cm)Resistivity(Ohm-cm)RefwaferV/sunlow23.45E-02125.910982.92138.23119.6166.950.021.5p-typeGeneralized0.0784889Voc(V)Vmp(V)Jmp(A/cm²)PFFPseudoEfficiencyApparentRs(Ohmcm²)Rshl.boundOhm-cm²Ideality(n)@0.1sunVoc@0.1sunJ01(A/cm²)J02(A/cm²)SumofSquaresDateTimeLogtoSummaryIdeality(n)@1sun0.5970.5130.0320.79016.2730.053534.4791.620.5222.9E-123.8E-086.70E+0123-Aug-101:43PMNotLogged1.03PseudoLightIVcurvewithouttheeffectofRs00.0050.010.0150.020.0250.030.0350.040.000.100.200.300.400.500.600.70Voltage(V)Current(A/cm2)0.0000.0090.019PowerDensity(W/cm2)0.000.010.101.0010.000.00000.10000.20000.30000.40000.50000.60000.7000Voltage(V)LightIntensity(Suns)MeasuredDataDoubleDiodeFitIlluminationatReferenceCellandTestCellVoc0.0010.0100.1001.00010.0000.00E+002.00E-034.00E-036.00E-038.00E-031.00E-021.20E-021.40E-021.60E-02Time(sec)LightIntensity(Suns)00.10.20.30.40.50.60.7CellVoltage(volts)LightIntensityOpen-CircuitVoltageEffectiveLifetime,upperbound(AccurateforcellwithgoodBSF,LW,NA,W)0.00E+001.00E-062.00E-063.00E-064.00E-065.00E-066.00E-067.00E-068.00E-069.00E-061.00E-051.00E+121.00E+131.00E+141.00E+15carrierdensity(cm-3)EffectiveLifetime(s)LogtoSummaryMeasureCellFitIVCurvetoggletypeAnalysisType测试分析Version3.14SampleNameJsc(A/cm²)NumberofCellsTemp.(°C)FittedRsh(Wcm²)FittedJ01(pA/cm²)FittedJ02(nA/cm²)SumofSquares1SumofSquares2Width(cm)Resistivity(Ohm-cm)RefwaferV/sunlow33.45E-02125.94622.35830.25314.5833.880.021.5p-typeGeneralized0.0784889Voc(V)Vmp(V)Jmp(A/cm²)PFFPseudoEfficiencyApparentRs(Ohmcm²)Rshl.boundOhm-cm²Ideality(n)@0.1sunVoc@0.1sunJ01(A/cm²)J02(A/cm²)SumofSquaresDateTimeLogtoSummaryIdeality(n)@1sun0.6020.5190.0310.78016.2010.055462.8922.100.5212.4E-123.0E-083.39E+0123-Aug-101:43PMNotLogged1.07PseudoLightIVcurvewithouttheeffectofRs00.0050.010.0150.020.0250.030.0350.040.000.100.200.300.400.500.600.70Voltage(V)Current(A/cm2)0.0000.0090.019PowerDensity(W/cm2)0.000.010.101.0010.000.00000.10000.20000.30000.40000.50000.60000.7000Voltage(V)LightIntensity(Suns)MeasuredDataDoubleDiodeFitIlluminationatReferenceCellandTestCellVoc0.0010.0100.1001.00010.0000.00E+002.00E-034.00E-036.00E-038.00E-031.00E-021.20E-021.40E-021.60E-02Time(sec)LightIntensity(Suns)00.10.20.30.40.50.60.7CellVoltage(volts)LightIntensityOpen-CircuitVoltageEffectiveLifetime,upperbound(AccurateforcellwithgoodBSF,LW,NA,W)0.00E+002.00E-064.00E-066.00E-068.00E-061.00E-051.20E-051.00E+121.00E+131.00E+141.00E+15carrierdensity(cm-3)EffectiveLifetime(s)LogtoSummaryMeasureCellFitIVCurvetoggletypeAnalysisType结果分析从上图的LBIC测试结果可以看出：三片电池的扩散长度均不到290um，一般多晶电池片正常效率应在400um左右。扩散长度小说明此三片硅片质量较差。扩散长度和少子寿命是成正比的，扩散长度小，说明少子运动路程少，载流子寿命低。电子空穴对在被内建电场分离之前更容易被复合掉，从而造成电池片效率低下。1号片存在扩散不均匀现象，EL和WT2000都显示在电池的同一位置上出现了某一区域未形成PN结的状况。2号片扩散长度比一号片更小，根据Ln=√Dntn。可以知道2号片的少子寿命更低。3号片在较低的反偏下可以观察到绒丝处有亮点，与其暗电流偏大相吻合。说明在该片的多晶硅晶界处存在比较大的漏电。结果分析从上面三份SUNS-VOC的数据来看：忽略Rs的影响后，理想填充因子PFF较FF都有很大上升。说明造成电池填充因子降低的主要原因是由于Rs过大。一般正常的156P太阳电池PFF可以达到80%以上，我们认为造成这PFF不能达到标准值的主要原因是有效光生电流偏低。具体表现在Impp和Isc都比较低。一个太阳下，二极管填充因子趋近于1，说明标准光强下，太阳电池可以看成是一个理想二极管。在弱光下，0.1Sun下，第三片电池