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CZ(,410083)CZ,CCZLFCZOxygenControlTechnologyforLarge-DiameterCZ-GrownSiliconSingleCrystalShiJinxing(Dept.ofAppliedPhysicsandHeatEng.,CentralSouthUniversityofTechnology,Changsha410083)AbstractThispaperisconcernedwiththeoxygencontroltechnologywhichisusedinCZ2growthoflarge2diametersiliconsinglecrystal.Thepullingconditionadjust2mentandmagnetic2field2appliedCZmethodaretwokindsofmaintechniquesforoxygencontrol.TherecentdevelopmentofCCZandLFCZmethodarealsodiscussedintermsofoxygencontrol.KeywordsLarge2diameterSiliconsinglecrystalMagnetic2field2appliedmethodOxygencontrol1CZ,(11018cm-3)CZ,,,,CZ,,,,SiO2,,,,,CZ,(SiO2),2,2,64199812236CZ:1),;2),;3),CZ,,:1)2),,,2CZ,:1),,2),,,3),,CZ,[1]200mmCZ,:1),,2)9rpm,;9rpm,(10rpm15rpm,5rpm),,,CZ,,,CZCZ,150mm,5107,6109,Hyung2TaeChung,CZ[2]150mm,013m,-22rpm,812rpm,,,,,,,(612rpm),,10rpm,,,10rpm,-22rpm,1510-6,,017m,250mm,210,015,1510-6,410rpm,-1815rpm,,3(MCZ),,,MCZ[3]:1),2)741998122363),,MCZ,,MCZVMCZ()HMCZ()MCZ,1),HMCZ,,;VM2CZ,0105T,;011T,,,2)VMCZ,,1rpm,,,,011T,410-5HMCZ,,0115T,,3)MCZ,HMCZ,,VMCZ,MCZ:HMCZ,,,,,,SiO,VMCZ,,,,,SiO,01050115T,[4],011T,,,,;,,VMCZHMCZ,,,,,cuspMCZ[5]cusp,2,CZ,2,cusp,1)2)23),,24CZ,,,CZCCZLFCZCCZCZ,A.Ansel2mo1mm,,150mm,40%,,,84199812236,()[6]YutakaShiraishiCCZ,CZ(LFCZ)[7]SiH4,,,,,150mm200mm,,(81513)1017cm-31KandaI,SuzukiT,KojimaK.InfluenceofCrucibleandCrystalRotationonOxygenConcentrationDistributioninLargeDiameterSiliconSingleCrystals.JCrystGrowth,1996;166(14):6692ChungHT,LeeSC,YoonJK.NumericalPredictionofOperationalParametersinCzochralskiGrowthofLargeScaleSi.JCrystGrowth,1996;163(3):2493ThomasRN,HobgoodHM,Ravishankaretal.MeltGrowthofLargeDiameterSemiconductorsPartÊ.SolidStateTechnol,1990;33(4):1634KakimotoKK,YiKW,EguchiM.OxygenTransferDur2ingSingleSiliconCrysyalGrowthinCzochralskiSystemWithVerticalMagneticFields.JCrystGrowth,1996;163(3):2385KhineYY,WalkerJS.CentrifugalPumpingDuringCzochralskiSiliconGrowthWithaStrongNon2UniformAxisymmetricMagneticField.JCrystGrowth,1996;165(4):3726AnselmoA,PrasasV,KoziolJetal.NumericalandExper2imentalStudyofaSolidPelletFeedContinuousCZGrowthProcessofSiSingleCrystals.JCrystGrowth,1993;131(12):2477ShiraishiY,KurosakaS,ImaiM.SilicomCrystalGrowthUsingaLiquidFeedingCzochralskiMethod.JCrystGrowth,1996;166(14):685(19971006),196220(17,3)(22)SEMEDX,Al,,1BlackJR.ElectromigrationFailureModesinAluminumMetallizationforSemiconductorDevices.ProceedingsoftheIEEE,1969;57(9):15872AnataY.Temperature2ControlledWafer2levelJoule2Heat2edConstantCurrentEMTestsofWöAl2Cu2SiöWWires.IEEEICMTS,1994;7(3):1473SteenwykSD,KankowskiEF.ElectromigrationinAlu2minumtoTantalumSilicideContacts.In:IEEEIternationalRelibilityPhysicsProceeding,Anahaim,Calif.1986,Newyork:TheIEEEElectronDevicesSocietyandIEEERelia2bilitySociety,1986:304GhatePB.ElectromigrationInducedFailuresinVLSIIn2terconnects.In:IEEEIternationalRelibilityPhysicsPro2ceeding,SanDiego,Calif.1982,NewYork:TheIEEEElectronDevicesSocietyandIEEEReliabilitySociety,1982:2995SchafftHA,StationTC,ShottJD.ReproducibilityofElectromigrationMeasurements.IEEETransactionElec2tronDevices,1987;ED234(3):6736PascoRW.EffectofDrivingForcesonAtionMotion.Solid2StateElectronics,1983;26(5):445(19971105),1989,1992,,,,20,1993,,,,20,1964,,,,3094199812236