氧沉淀对直拉硅单晶硬度的影响

335Vol133No15稀有金属CHINESEJOURNALOFRAREMETALS200910Oct12009:2008-08-01;:2009-05-08:(50832006):(1986-),,,;:*(E-mai:[e-mail])曾徵丹,马向阳*,陈加和,杨德仁(浙江大学硅材料国家重点实验室,浙江杭州310027):(CZ),,,;,,,,:;;do:i10.3969/.jissn.0258-7076.2009.05.031:TN304.1;O614.41:A:0258-7076(2009)05-0758-04(CZ),CZ[1],,,,,,,,,[2~4];,[5],,[6~8],CZ,CZ,;,1N,6,100,9.4@1017cm-3(ASTM),408#cmCZ,650,750800e,1~16h;1000e,8~64h2,(FTIR),(SIRM),30Lm,1000e(HFBH2O=1B10),,[110],100g,10s10,10,1mm,1022.11(a)57591(a)(b)Fig.1OpticalmicrographofresidualimpressionofVickershardnesstest(a),OpticalmicrographofresidualimpressionofVickershardnesstestwithlateralcracks(b),,,:[110],,[110],1(b),,,[9],,2100g(c[Oi]),2,:1c[Oi]2CZ100gFig.2DependencesofVickershardnessoninterstitialoxygenconcentrationCZsiliconwafersenduredlow2hightwostepsanneals,andloadofindentationbeing100g;2c[Oi],,[10,11],:,,1,CZ,:,1,CZCZ,,,,,2,1CZ,SIRM2.23(a),(b)12SIRM,(c),(d):2.5@1017cm-37.4@1017cm-3,1760333SIRMFig.3SIRMgraphsoftypicalsamplesanddistributionofoxygenprecipitatescsizeinthesesamples(a),(b)Samplefromregion1definedinFig.2;(c),(d)Samplefromregion2222,,12,,2,,,,,CZ1,,3CZCZ100g(c[Oi]),,c[Oi];,c[Oi],,CZ,CZ,,,,CZ5761:[1]YonenagaI,SuminoK,HoshiK.Mechanicalstrengthofsili2concrystalsasafunctionoftheoxygenconcentration[J].Jour2nalofAppliedPhysics,1984,56(8):2346.[2]SueokaK,AkatsukaM,KatahamaH,AdachiN.MechanismofslipdislocationgenerationbyoxideprecipitatesinCzochralskisiliconwafers.[J].SolidStatePhenomena.1997,57(8):137.[3]SueokaK,AkatsukaM,KatahamaH,AdachiN.DependenceofmechanicalstrengthofCzochralskisiliconwafersonthetemper2atureofoxygenprecipitationannealing[J].JournaloftheElec2trochemicalSociety,1997,144(3):1111.[4]SueokaK,AkatsukaM,KatahamaH,AdachiN.Effectofox2ideprecipitatesizesonthemechanicalstrengthofCzochralskisili2conwafers[J].JapaneseJournalofAppliedPhysicsPart12Reg2ularPapersShortNotes&ReviewPapers,1997,36(12A):7095.[5]YangD,WangG,XuJ,LiD,QueD,FunkeC,LiD,QueD,FunkeC,MoellerH.Influenceofoxygenprecipitatesonthewarpageofannealedsiliconwafers[J].MicroelectronicEngineer2ing,2003,66(124):345.[6]ShimizuH,IsomaeS,MinowaK,SatohT,SuzukiT.Gravita2tionalstress2induceddislocationsinlarge2diametersiliconwafersstudiedbyX2raytopographyandcomputersimulation[J].Jour2naloftheElectrochemicalSociety,1998,145(7):2523.[7]MezhennyiMV,Milv'idskiiMG,ProstomolotovAI.Simulationofthestressesproducedinlarge2diametersiliconwafersduringthermalannealing[J].PhysicsoftheSolidState,2003,45:1884.[8]FischerA,KissingerG.Loadinducedstressesandplasticde2formationin450mmsiliconwafers[J].AppliedPhysicsLetters,2007,91(11):111911.[9]CookRF.Strengthandsharpcontactfractureofsilicon[J].JournalofMaterialsScience,2006,41(3):841.[10]KelchnerCL,PlimptonSJ,HamiltonJC.Dislocationnuclea2tionanddefectstructureduringsurfaceindentation[J].PhysicalReviewB,1998,58(17):11085.[11]YoshiokaM,KawamuraK.X2raytopographicstudyondisloca2tionconfigurationaroundindentationinaplasticregionofSisin2glecrystal[J].JournalofAppliedPhysics,1994,75(5):2367.InfluencesofOxygenPrecipitationonVickersHardnessofCzochralskiSiliconZengZhidan,MaXiangyang*,ChenJiahe,YangDeren(StateKeyLaboratoryofSiliconMaterials,ZhejiangUniversity,Hangzhou310027,China)Abstract:TheeffectofoxygenprecipitationonVick2ershardnessofCzochralski(CZ)siliconwasinvesti2gated.Whenappropriateextentofoxygenprecipitationappeared,theVickershardnessofCZsiliconde2creasedwiththereductionofinterstitialoxygencon2centration(c[Oi]).Butsufficientlysignificantoxy2genprecipitationwouldleadtotheoxygenprecipitateswithhighdensityandlargesize,theprecipitationstrengtheningeffectappeared,asaresul,ttheVickershardnessofCZsilicondidnotdecreasewithfurtherre2ductionofc[Oi]butincreasedtoacertainexten.tKeywords:mono2crystallinesilicon;oxygenprecipitates;Vickershardness