1SS184-07中文资料

1SS1842007-11-011TOSHIBADiodeSiliconEpitaxialPlanarType1SS184UltraHighSpeedSwitchingApplicationzSmallpackage:SC-59zLowforwardvoltage:VF(3)=0.9V(typ.)zFastreverserecoverytime:trr=1.6ns(typ.)zSmalltotalcapacitance:T=2.2pF(typ.)AbsoluteMaximumRatings(Ta=25°C)CharacteristicSymbolRatingUnitMaximum(peak)reversevoltageVRM85VReversevoltageVR80VMaximum(peak)forwardcurrentIFM300(*)mAAverageforwardcurrentIO100(*)mASurgecurrent(10ms)IFSM2(*)APowerdissipationP150mWJunctiontemperatureTj125°CStoragetemperatureTstg−55~125°CNote:Usingcontinuouslyunderheavyloads(e.g.theapplicationofhightemperature/current/voltageandthesignificantchangeintemperature,etc.)maycausethisproducttodecreaseinthereliabilitysignificantlyeveniftheoperatingconditions(i.e.operatingtemperature/current/voltage,etc.)arewithintheabsolutemaximumratings.PleasedesigntheappropriatereliabilityuponreviewingtheToshibaSemiconductorReliabilityHandbook(“HandlingPrecautions”/“DeratingConceptandMethods”)andindividualreliabilitydata(i.e.reliabilitytestreportandestimatedfailurerate,etc).*:Unitrating.Totalrating=Unitrating×1.5.ElectricalCharacteristicsCharacteristicSymbolTestCircuitTestConditionMinTyp.MaxUnitVF(1)―IF=1mA―0.60―VF(2)―IF=10mA―0.72―ForwardvoltageVF(3)―IF=100mA―0.901.20VIR(1)―VR=30V――0.1ReversecurrentIR(2)―VR=80V――0.5μATotalcapacitanceCT―VR=0,f=1MHz―0.93.0pFReverserecoverytimetrr―IF=10mA(Fig.1)―1.64.0nsMarkingJEDECTO-236MODEIAJSC-59TOSHIBA1-3G1EWeight:0.012gUnit:mm1SS1842007-11-012Fig.1Reverserecoverytime(trr)testcircuit1SS1842007-11-013RESTRICTIONSONPRODUCTUSE20070701-ENGENERAL•Theinformationcontainedhereinissubjecttochangewithoutnotice.•TOSHIBAiscontinuallyworkingtoimprovethequalityandreliabilityofitsproducts.Nevertheless,semiconductordevicesingeneralcanmalfunctionorfailduetotheirinherentelectricalsensitivityandvulnerabilitytophysicalstress.Itistheresponsibilityofthebuyer,whenutilizingTOSHIBAproducts,tocomplywiththestandardsofsafetyinmakingasafedesignfortheentiresystem,andtoavoidsituationsinwhichamalfunctionorfailureofsuchTOSHIBAproductscouldcauselossofhumanlife,bodilyinjuryordamagetoproperty.Indevelopingyourdesigns,pleaseensurethatTOSHIBAproductsareusedwithinspecifiedoperatingrangesassetforthinthemostrecentTOSHIBAproductsspecifications.Also,pleasekeepinmindtheprecautionsandconditionssetforthinthe“HandlingGuideforSemiconductorDevices,”or“TOSHIBASemiconductorReliabilityHandbook”etc.•TheTOSHIBAproductslistedinthisdocumentareintendedforusageingeneralelectronicsapplications(computer,personalequipment,officeequipment,measuringequipment,industrialrobotics,domesticappliances,etc.).TheseTOSHIBAproductsareneitherintendednorwarrantedforusageinequipmentthatrequiresextraordinarilyhighqualityand/orreliabilityoramalfunctionorfailureofwhichmaycauselossofhumanlifeorbodilyinjury(“UnintendedUsage”).UnintendedUsageincludeatomicenergycontrolinstruments,airplaneorspaceshipinstruments,transportationinstruments,trafficsignalinstruments,combustioncontrolinstruments,medicalinstruments,alltypesofsafetydevices,etc..UnintendedUsageofTOSHIBAproductslistedinhisdocumentshallbemadeatthecustomer’sownrisk.•Theproductsdescribedinthisdocumentshallnotbeusedorembeddedtoanydownstreamproductsofwhichmanufacture,useand/orsaleareprohibitedunderanyapplicablelawsandregulations.•Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultfromitsuse.NolicenseisgrantedbyimplicationorotherwiseunderanypatentsorotherrightsofTOSHIBAorthethirdparties.•Pleasecontactyoursalesrepresentativeforproduct-by-productdetailsinthisdocumentregardingRoHScompatibility.Pleaseusetheseproductsinthisdocumentincompliancewithallapplicablelawsandregulationsthatregulatetheinclusionoruseofcontrolledsubstances.Toshibaassumesnoliabilityfordamageorlossesoccurringasaresultofnoncompliancewithapplicablelawsandregulations.