REV.1.2FS8205A-DS-12_ENAUG2009DatasheetFS8205ADualN-ChannelEnhancementModePowerMOSFETFSC’PropertiesForReferenceOnlyFS8205ARev.1.22/6FortuneSemiconductorCorporation富晶電子股份有限公司28F.,No.27,Sec.2,ZhongzhengE.Rd.,DanshuiTown,TaipeiCounty251,TaiwanTel.:886-2-28094742Fax:886-2-28094874’PropertiesForReferenceOnlyFS8205ARev.1.23/61.Features1.1Lowon-resistance1.1.1RDS(ON)=25mΩMAX.(VGS=4.5V,ID=4A)1.1.2RDS(ON)=35mΩMAX.(VGS=2.5V,ID=3A)2.ApplicationsLi-ionbatterymanagementapplications3.OrderingInformationProductNumberDescriptionPackageTypeQuantity/ReelFS8205ATSSOP8packageversionTSSOP-83,0004.PinAssignment5.AbsoluteMaximumRatingsSymbolParameterRatingUnitsVDSDrain-SourceVoltage20VVGSGate-SourceVoltage±12VID@TA=25℃ContinuousDrainCurrent36AID@TA=70℃ContinuousDrainCurrent35AIDMPulsedDrainCurrent125APD@TA=25℃TotalPowerDissipation1WLinearDeratingFactor0.008W/℃TSTGStorageTemperatureRange-55to150℃TJOperatingJunctionTemperatureRange-55to150℃6.ThermalDataSymbolParameterValueUnitRthj-aThermalResistanceJunction-ambient3Max.125℃/WFSC’PropertiesForReferenceOnlyFS8205ARev.1.24/67.ElectricalCharacteristicsElectricalCharacteristics@Tj=25℃(unlessotherwisespecified)SymbolParameterTestConditionsMin.Typ.Max.UnitsStaticCharacteristicsBVDSSDrain-SourceBreakdownVoltageVGS=0V,ID=250uA20--VΔBVDSS/ΔTjBreakdownVoltageTemperatureCoefficientReferenceto25℃,ID=1mA-0.1-V/℃RDS(ON)StaticDrain-SourceOn-Resistance2VGS=4.5V,ID=4A-2125mΩVGS=2.5V,ID=3A-2735mΩVGS(th)GateThresholdVoltageVDS=VGS,ID=250uA0.5-1.0VDrain-SourceLeakageCurrent(Tj=25℃)VDS=20V,VGS=0V--1uAIDSSDrain-SourceLeakageCurrent(Tj=70℃)VDS=20V,VGS=0V--25uAIGSSGate-SourceLeakageVGS=±10V--±10uA8.Source-DrainDiodeSymbolParameterTestConditionsMin.Typ.Max.UnitsISContinuousSourceCurrent(BodyDiode)VD=VG=0V,VS=1.2V--0.83AVSDForwardOnVoltage2Tj=25℃,IS=1.25A,VGS=0V--1.2VNotes:1.PulsewidthlimitedbyMax.junctiontemperature.2.Pulsewidth≦300us,dutycycle≦2%.3.Surfacemountedon1in2copperpadofFR4board;208℃/WwhenmountedonMin.copperpad.FSC’PropertiesForReferenceOnlyFS8205ARev.1.25/69.TypicalCharacteristicsOn-Regioncharacteristics@Ta=25Deg-5051015202500.511.52Vds,DraintoSourceVoltage(V)Id,DrainCurrent(A)2.0V2.5V3.0V3.5V4.0V4.5VOn-Regioncharacteristics@Ta=125Deg-5051015202500.511.52Vds,DraintoSourceVoltage(V)Id,DrainCurrent(A)2.0V2.5V3.0V3.5V4.0V4.5VFig1.TypicalOutputCharacteristicsFig2.TypicalOutputCharacteristicsOn-ResistanceVariationwithTemperatureVgs=4.5V,Ids=4A00.20.40.60.811.21.4-50050100150Temperature(Deg)Rds(on)-NormalizedDrain-SourceOn-ResistanceGateThresholdVoltageTemperatureCoefficientVgs=Vdg,Ids=250uA00.20.40.60.811.21.4-50050100150Temperature(Deg)Vth-NormalizedThresholdVoltageFig3.NormalizedOn-ResistanceFig4.GateThresholdVariationwithTemperatureForwardCharacteristicofReverseDiode00.511.522.5-0.30.20.71.2Vsd,SoucretoDrainVoltage(V)Is(A)Ta=25DegTa=125DegFig5.ForwardCharacteristicofReverseDiodeFSC’PropertiesForReferenceOnlyFS8205ARev.1.26/610.PackageInformation11.RevisionHistoryVersionDatePageDescription1.02009/02/10-Version1.0released1.12009/04/283~4Rds25TYP25mohmMAX32mohmRds45TYP20mohmMAX25mohmID@TA=25℃6AID@TA=70℃5AIDpulse300μS25A1.22009/08/043~4Rds25TYP27mohmMAX35mohmRds45TYP21mohmMAX25mohmRds25ID:3ARds45ID:4AFSC’PropertiesForReferenceOnly