WAFERMOUNTWAFERSAWDIEATTACHEPOXYCUREWIREBONDSemiconductorPackagingProcessMODINGIntegratedCircuit(IC)TRIM/FORMWAFERCONTENTS•A.PURPOSE•B.PRINCIPLE•C.PROCESS•D.PACKAGEINTODUCE•E.M/CBASICDATA•F.MATERIAL•G.PARAMETER•H.DEFECTS•I.REFERENCEA.PURPOSE•FORMINGASTRONGANDRELIABLEINTERTALLICBONDBETWWEENTHEWIREANDTHEPAD,ASWELLASBETWEENTHEWIREANDTHELEADDICEGOLDWIRELEADFRAMEA.PURPOSEpadleadGoldwireWedgeBond(2ndBond)BallBond(1stBond)B.PRINCIPLE•HARDWELDING:–PRESSURE–AMPLIFY&FREQUENCY–WELDINGTIME–WELDINGTEMPATURE•THERMOSONICBONDING:–THERMALCOMPRESSURE–ULTRASONICENERGY(1.2MHZ)GLASSCONTAMINATIONVIBRATIONSiO2,TiN,TiWSiGOLDBALLPRESSUREMOISTUREAL2O3AlB.PRINCIPLEC.WIREBONDPROCESSpadleadFreeairballiscapturedinthechamferGOLDBALLFreeairballiscapturedinthechamferpadleadFreeairballiscapturedinthechamferpadleadFreeairballiscapturedinthechamferpadleadFreeairballiscapturedinthechamferpadleadFormationofafirstbondpadleadFormationofafirstbondpadleadFormationofafirstbondpadleadheatPRESSUREUltraSonicVibrationFormationofafirstbondpadleadUltraSonicVibrationheatPRESSURECapillaryrisestoloopheightpositionpadleadCapillaryrisestoloopheightpositionpadleadCapillaryrisestoloopheightpositionpadleadCapillaryrisestoloopheightpositionpadleadCapillaryrisestoloopheightpositionpadleadFormationofalooppadleadFormationofalooppadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadpadleadFormationofasecondbondpadleadheatFormationofasecondbondpadleadheatheatpadleadheatheatpadleadheatheatpadleadpadleadpadleadpadleadpadleadpadleadpadleadDisconnectionofthetailpadleadDisconnectionofthetailpadleadFormationofanewfreeairball