IRF260N

IRFP260NPbFHEXFET®PowerMOSFET2/12/04ParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V50ID@TC=100°CContinuousDrainCurrent,VGS@10V35AIDMPulsedDrainCurrent
200PD@TC=25°CPowerDissipation300WLinearDeratingFactor2.0W/°CVGSGate-to-SourceVoltage±20VEASSinglePulseAvalancheEnergy560mJIARAvalancheCurrent
50AEARRepetitiveAvalancheEnergy
30mJdv/dtPeakDiodeRecoverydv/dt10V/nsTJOperatingJunctionand-55to+175TSTGStorageTemperatureRangeSolderingTemperature,for10seconds300(1.6mmfromcase)°CMountingtorque,6-32orM3srew10lbf•in(1.1N•m)AbsoluteMaximumRatingsParameterTyp.Max.UnitsRθJCJunction-to-Case–––0.50RθCSCase-to-Sink,Flat,GreasedSurface0.24–––°C/WRθJAJunction-to-Ambient–––40ThermalResistance=200VRDS(on)=0.04ΩID=50ASDG
AdvancedProcessTechnology
Dynamicdv/dtRating
175°COperatingTemperature
FastSwitching
FullyAvalancheRated
EaseofParalleling
SimpleDriveRequirementsTO-247ACPD-95010
Lead-FreeIRFP260NPbF2(BodyDiode)––––––showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)
––––––p-njunctiondiode.VSDDiodeForwardVoltage––––––1.3VTJ=25°C,IS=28A,VGS=0VtrrReverseRecoveryTime–––268402nsTJ=25°C,IF=28AQrrReverseRecoveryCharge–––1.92.8µCdi/dt=100A/µstonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)Source-DrainRatingsandCharacteristics50200AStartingTJ=25°C,L=1.5mHRG=25Ω,IAS=28A.

Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.
ISD≤
28A
di/d
≤
486A/µs,VDD
≤
V(BR)DSS,TJ≤175°CPulsewidth≤400µs;dutycycle≤2%.ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage200––––––VVGS=0V,ID=250µA∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––0.26–––V/°CReferenceto25°C,ID=1mARDS(on)StaticDrain-to-SourceOn-Resistance––––––0.04ΩVGS=10V,ID=28AVGS(th)GateThresholdVoltage2.0–––4.0VVDS=VGS,ID=250µAgfsForwardTransconductance27––––––SVDS=50V,ID=28A––––––25µAVDS=200V,VGS=0V––––––250VDS=160V,VGS=0V,TJ=150°CGate-to-SourceForwardLeakage––––––100VGS=20VGate-to-SourceReverseLeakage––––––-100nAVGS=-20VQgTotalGateCharge––––––234ID=28AQgsGate-to-SourceCharge––––––38nCVDS=160VQgdGate-to-Drain(Miller)Charge––––––110VGS=10Vtd(on)Turn-OnDelayTime–––17–––VDD=100VtrRiseTime–––60–––ID=28Atd(off)Turn-OffDelayTime–––55–––RG=1.8ΩtfFallTime–––48–––VGS=10VBetweenlead,––––––6mm(0.25in.)frompackageandcenterofdiecontactCissInputCapacitance–––4057–––VGS=0VCossOutputCapacitance–––603–––pFVDS=25VCrssReverseTransferCapacitance–––161–––ƒ=1.0MHznHElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)LDInternalDrainInductanceLSInternalSourceInductance––––––SDGIGSSns5.013IDSSDrain-to-SourceLeakageCurrentIRFP260NPbF=25CJ°TOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5VV,Drain-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)DSD4.5V0.111010010000.111010020µsPULSEWIDTHT=175CJ°TOPBOTTOMVGS15V10V8.0V7.0V6.0V5.5V5.0V4.5VV,Drain-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)DSD4.5V














11010010004.05.06.07.08.09.010.0V=50V20µsPULSEWIDTHDSV,Gate-to-SourceVoltage(V)I,Drain-to-SourceCurrent(A)GSDT=175CJ°T=25CJ°-60-40-200204060801001201401601800.00.51.01.52.02.53.03.5T,JunctionTemperature(C)R,Drain-to-SourceOnResistance(Normalized)JDS(on)°V=I=GSD10V50A
 



IRFP260NPbF4















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11010010001101001000OPERATIONINTHISAREALIMITEDBYRDS(on)SinglePulseTT=175C=25C°°JCV,Drain-to-SourceVoltage(V)I,DrainCurrent(A)I,DrainCurrent(A)DSD10us100us1ms10ms








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1101001000VDS,Drain-to-SourceVoltage(V)010002000300040005000600070008000C,Capacitance(pF)CossCrssCissVGS=0V,f=1MHZCiss=Cgs+Cgd,CdsSHORTEDCrss=CgdCoss=Cds+Cgd0501001502000481216Q,TotalGateCharge(nC)V,Gate-to-SourceVoltage(V)GGSI=D28AV=40VDSV=100VDSV=160VDS0.111010010000.20.61.01.41.82.2V,Source-to-DrainVoltage(V)I,ReverseDrainCurrent(A)SDSDV=0VGST=25CJ°T=175CJ°IRFP260NPbF
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