AlGaNöGaNHEMTB+XX(,,210016)2006201218,2006203221:B+AlGaNöGaNHEMT,10118ö,700CB+AlGaNöGaNHEMT,B+70V,40V;B+fTfmax15GHz38GHz,12GHz31GHz:;;;:TN325+.3:A:100023819(2007)032325204TheIsolationofAlGaNöGaNHEMTsUsingB+ImplantationLIXiaoCHENTangshengLIZhonghuiJIAOGangRENChunjiang(NationalKeyLaboratoryofMonolithicIntegratedCircuitsandModules,Nanjing,210016,CHN)Abstract:TheisolationofAlGaNöGaNHEMTsusingB+implantationhasbeenreportedinthispaper.Theisolationsheetresistanceof10118öwasachievedthroughoptimizingtheimplantingenergyanddose.Thehighresistanceoftheimplantedregionkeepsthethermalstabilityupto700C.AlGaNöGaNHEMTsusingB+implantationandmesatorealizeisolationrespectivelyhavebeenfabricated.ThebreakdownvoltageoftheB+implanteddevicesareabout70V,muchhigherthanthemesaisolateddeviceswhosebreakdownvoltageareabout40V.TheunitycurrentgaincutofffrequencyandmaximumoscillationfrequencyoftheB+implantateddevicesare15GHzand38GHz,respectively,whicharemuchimprovedthanthemesaisolationdevices.Keywords:ionimplantation;isolation;GaN;HEMTsEEACC:25601GaNGaN,AlGaN,GaN,AlGaAsöGaAs,AlGaNöGaNHEMT(ICP)(IM)(RIE)27320078RESEARCH&PROGRESSOFSSEVol.27,No.3Aug.,2007XX:E2mail:leeshaw@126.com:;;GaN,,,,[1,2]AlGaNöGaNHEMTHHeN[1,4]B+AlGaNöGaNHEMTs,HHeN,B+SiGaAs,,10118ö,700CB+AlGaNöGaNHEMT80mA,190mSömm,-3V,70V,-20V019LAfT=15GHz,fmax=38GHz2B+AlGaNöGaNThomasSwanMOCVDGaN,,1nmAlN,AlGaN,GaN,27%11Fig.1Schematicoftheepi2layerstructureB+,2ICP,B+(Isolationdistrict)60:1,R,R=60R2Fig.2Testpatternofisolationcharacteristics,TRIM,,33Fig.3Simulationoftheimplantedionsdistribution110keV,,4,51013cm-211014cm-2,1078ö,51014cm-2,10118ö,,,,,,4Fig.4Thevariationofisolationresistanceversusionimplantationdoses62327,,B+,,,,,[3],,71014cm-2,,(Hoppingconduction)[1]51014cm-2,,TRIM70keV110keV130keV56,70keV110keV,,130keV,,,,5Fig.5Simulationofimplantedionswithdifferentenergy6Fig.6Thevariationofisolationresistanceversusimplantationenergy,,,[3]RTP2300,N2,5min,77Fig.7Thevariationofisolationresistancewithannealingtemperature,110keV,51014cm-2R1,310118ö,700C5min210118ö,800C5min61088ö,900C5min41078ö,R2110keV,71014cm-230keV,51014cm-2,7,R221098ö,700C5min,21098ö,800C5min,0151098ö800C,,,,,,,3AlGaNöGaNHEMTAlGaNöGaNHEMT,,,TiöAlöNiöAu,870C30s,7233:AlGaNöGaNHEMTB+,,,NiöAu,100nmSiN1Lm,200Lm,4LmAlGaNöGaNHEMT,ICP,,,8AlGaNöGaNHEMTFig.8Thecross2sectionofAlGaNöGaNHEMTs49,-3V,10V()190mSömm,70V,40V9I2VFig.9TheI2VcharacteristicsofdevelopedAlGaNöGaNHEMTsfTfmax15GHz38GHz,fTfmax12GHz31GHz10(a)(b)RF10(a)(b)RFFig.10ThesmallsignalcharacteristicsoftheAlGaNöGaNHEMTsusingimplantation(a)andmesaisolation(b),,,fTfmax,,,,,,,,,,,,,,,,,5AlGaNöGaNB+,700CB+AlGaNöGaNHEMT,,,,(342)82327(,T=55),37165dBm(518W),3718dBm,0115dBm,0132dBm522Ka,,,[1]ChengNS,JiaPC,RenschDB,etal.A1202WX2bandspatiallycombinedsolid2stateamplifier[J].IEEETransMTT,1999,47(12):255722561.[2]ChengNS,AlexanianA,CaseMG,etal.402WCWbroad2bandspatialpowercombinerusingdensefinlinearrays[J].IEEETransMTT,1999,47(7):107021076.[3]JiangX,SeanCO,AmirM.AKa2bandpoweramplifierbasedonthetraveling2wavepower2dividingöcombiningslotted2waveguidecircuit[J].IEEETransMTT,2004;52(2):6332639.[4]VererCJ,HoeferWJ.Quarter2wavematchingofwaveguidetofin2linetransitions[J].IEEETransMTT,1984,32(12):164521648.[5]JeongJ,KwonY,LeeS,etal.1162and3132Wpoweramplifiermodulesat24GHzusingwaveguide2basedpower2combingstructures[J].IEEETransMTT,2000,48(12):270022708.[6]ChristianS,JerzyKP,HinkenJH.Synthesisofoptimumfin2linetapersusingdispersionformulasforarbitraryslotwidthsandlocations[J].IEEETransMTT,1984,32(12):163821645.[7]JiaPC,ChenLY,ChengNS,etal.Designofwaveguidefin2linearraysforspatialpowercombining[J].IEEETransMTT,2001,49(4):6092614.[8]SchmidtLP,ItohT.Spectraldomainanalysisofdominantandhigherordermodesinfin2lines[J].IEEETransMTT,1981,28:9812985.(CHENChangming),,,(XUJun),,,(328)[1]BinariSC,DietrichHB,KelnerG,etal.H,He,andNimplantisolationofn2typeGaN[J].JApplPhys,1995,78(5):300823011.[2],,.GaAsB+[J].,1991,11(2):1322136.[3],,.[M].,1982.[4],,,.AlGaNöGaNHEMTs[J].,2004,25(4):4582461.[5]YasuhiroOkamoto,YujiAndo,TatsuoNakayama,etal.High2powerrecessed2gateAlGaN2GaNHFETwithafield2modulatingplate[J].IEEETransactionsonElectronDevices,2004,51(12):2217.[6]YasuhiroOkamoto,YujiAndo,KojiHataya,etal.Improvedpowerperformanceforarecessed2gateAlGaN2GaNheterojunctionFETwithafield2modulatingplate[J].IEEETransactionsonMicrowaveTheoryandTechniques,2004,52(11):2536.(LIXiao),1978,2000,,GaN24327