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ParameterTyp.Max.UnitsRθJAMaximumJunction-to-Ambient75100HEXFETPowerMOSFETTheseP-ChannelMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor,providesthedesignerwithanextremelyefficientandreliabledeviceforuseinbatteryandloadmanagement.AthermallyenhancedlargepadleadframehasbeenincorporatedintothestandardSOT-23packagetoproduceaHEXFETPowerMOSFETwiththeindustry'ssmallestfootprint.Thispackage,dubbedtheMicro3™,isidealforapplicationswhereprintedcircuitboardspaceisatapremium.Thelowprofile(1.1mm)oftheMicro3allowsittofiteasilyintoextremelythinapplicationenvironmentssuchasportableelectronicsandPCMCIAcards.Thethermalresistanceandpowerdissipationarethebestavailable.ThermalResistanceVDSS=-20VRDS(on)=0.065ΩUltraLowOn-ResistanceP-ChannelMOSFETSOT-23FootprintLowProfile(1.1mm)AvailableinTapeandReelFastSwitching 08/11/04 ParameterMax.UnitsVDSDrain-SourceVoltage-20VID@TA=25°CContinuousDrainCurrent,VGS@-4.5V-3.7ID@TA=70°CContinuousDrainCurrent,VGS@-4.5V-2.2AIDMPulsedDrainCurrent-22PD@TA=25°CPowerDissipation1.3PD@TA=70°CPowerDissipation0.8LinearDeratingFactor0.01W/°CEASSinglePulseAvalancheEnergy11mJVGSGate-to-SourceVoltage±12VTJ,TSTGJunctionandStorageTemperatureRange-55to+150°C Micro3™2(BodyDiode)––––––showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)––––––p-njunctiondiode.VSDDiodeForwardVoltage––––––-1.2VTJ=25°C,IS=-1.0A,VGS=0VtrrReverseRecoveryTime–––2943nsTJ=25°C,IF=-1.0AQrrReverseRecoveryCharge–––1117nCdi/dt=-100A/µsRepetitiverating;pulsewidthlimitedbymax.junctiontemperature.Pulsewidth≤400µs;dutycycle≤2%.Source-DrainRatingsandCharacteristics-1.3-22SDGForrecommendedfootprintandsolderingtechniquesrefertoapplicationnote#AN-994. ! # StartingTJ=25°C,L=1.65mHRG=25Ω,IAS=-3.7A.ParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage-20––––––VVGS=0V,ID=-250µA∆V(BR)DSS/∆TJBreakdownVoltageTemp.Coefficient–––-0.009–––V/°CReferenceto25°C,ID=-1mA–––0.0500.065VGS=-4.5V,ID=-3.7A–––0.0800.135VGS=-2.5V,ID=-3.1AVGS(th)GateThresholdVoltage-0.40-0.55-1.2VVDS=VGS,ID=-250µAgfsForwardTransconductance6.0––––––SVDS=-10V,ID=-3.7A––––––-1.0VDS=-20V,VGS=0V––––––-25VDS=-20V,VGS=0V,TJ=70°CGate-to-SourceForwardLeakage––––––-100VGS=-12VGate-to-SourceReverseLeakage––––––100VGS=12VQgTotalGateCharge–––8.012ID=-3.7AQgsGate-to-SourceCharge–––1.21.8nCVDS=-10VQgdGate-to-Drain(Miller)Charge–––2.84.2VGS=-5.0Vtd(on)Turn-OnDelayTime–––350–––VDD=-10VtrRiseTime–––48–––ID=-3.7Atd(off)Turn-OffDelayTime–––588–––RG=89ΩtfFallTime–––381–––RD=2.7ΩCissInputCapacitance–––633–––VGS=0VCossOutputCapacitance–––145–––pFVDS=-10VCrssReverseTransferCapacitance–––110–––ƒ=1.0MHzElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)$%ΩRDS(on)StaticDrain-to-SourceOn-ResistanceIDSSDrain-to-SourceLeakageCurrent=25CJ°TOPBOTTOMVGS-7.00V-5.00V-4.50V-3.50V-3.00V-2.70V-2.50V-2.25V-V,Drain-to-SourceVoltage(V)-I,Drain-to-SourceCurrent(A)DSD-2.25V1101000.111010020µsPULSEWIDTHT=150CJ°TOPBOTTOMVGS-7.00V-5.00V-4.50V-3.50V-3.00V-2.70V-2.50V-2.25V-V,Drain-to-SourceVoltage(V)-I,Drain-to-SourceCurrent(A)DSD-2.25V101002.03.04.05.06.07.08.0V=-15V20µsPULSEWIDTHDS-V,Gate-to-SourceVoltage(V)-I,Drain-to-SourceCurrent(A)GSDT=25CJ°T=150CJ°-60-40-200204060801001201401600.00.51.01.52.0T,JunctionTemperature(C)R,Drain-to-SourceOnResistance(Normalized)JDS(on)°V=I=GSD-4.5V-3.7A4(on)SinglePulseTT=150C=25C°°JC-V,Drain-to-SourceVoltage(V)-I,DrainCurrent(A)I,DrainCurrent(A)DSD10us100us1ms10ms110100VDS,Drain-to-SourceVoltage(V)02004006008001000C,Capacitance(pF)CossCrssCissVGS=0V,f=1MHZCiss=Cgs+Cgd,CdsSHORTEDCrss=CgdCoss=Cds+Cgd0369120246810Q,TotalGateCharge(nC)-V,Gate-to-SourceVoltage(V)GGSFORTESTCIRCUITSEEFIGUREI=D13-3.7AV=-10VDS0.11101000.20.40.60.81.01.2-V,Source-to-DrainVoltage(V)-I,ReverseDrainCurrent(A)SDSDV=0VGST=25CJ°T=150CJ°(C)-I,DrainCurrent(A)°CD2550751001251500510152025StartingT,JunctionTemperature(C)E,SinglePulseAvalancheEnergy(mJ)JAS°IDTOPBOTTOM-1.7A-3.0A-3.7A0.111010010000.000010.00010.0010.010.1110