BUK138-50DLC1-118;中文规格书-Datasheet资料

PhilipsSemiconductorsProductspecificationLogiclevelTOPFETBUK138-50DLD-PAKversionofBUK117-50DLDESCRIPTIONQUICKREFERENCEDATAMonolithictemperatureandSYMBOLPARAMETERMAX.UNIToverloadprotectedlogiclevelpowerMOSFETinTOPFET2technologyVDSContinuousdrainsourcevoltage50Vassembledina3pinsurfacemountIDContinuousdraincurrent8Aplasticpackage.PDTotalpowerdissipation40WTjContinuousjunctiontemperature150˚CAPPLICATIONSRDS(ON)Drain-sourceon-stateresistance100mΩGeneralpurposeswitchfordrivingIISLInputsupplycurrentVIS=5V650µAlampsmotorssolenoidsheatersinautomotivesystemsandotherapplications.FEATURESFUNCTIONALBLOCKDIAGRAMTrenchMOSoutputstageCurrentlimitingOverloadprotectionOvertemperatureprotectionProtectionlatchedresetbyinput5VlogiccompatibleinputlevelControlofoutputstageandsupplyofoverloadprotectioncircuitsderivedfrominputLowoperatinginputcurrentpermitsdirectdrivebymicro-controllerESDprotectiononallpinsOvervoltageclampingforturnoffofinductiveloadsFig.1.ElementsoftheTOPFET.PINNING-SOT428PINCONFIGURATIONSYMBOLPINDESCRIPTION1input2drain3sourcetabdrainDRAINSOURCEINPUTRIGLOGICANDPROTECTIONO/VCLAMPPOWERMOSFET123tabPDSITOPFETMay20011Rev1.300(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDSContinuousdrainsourcevoltage1--50VIDContinuousdraincurrentVIS=5V;Tmb=25˚C-self-AlimitedIDContinuousdraincurrentVIS=5V;Tmb≤110˚C-8AIIContinuousinputcurrent--55mAIIRMNon-repetitivepeakinputcurrenttp≤1ms-1010mAPDTotalpowerdissipationTmb≤25˚C-40WTstgStoragetemperature--55175˚CTjContinuousjunctiontemperature2normaloperation-150˚CTsoldCasetemperatureduringsoldering-260˚CESDLIMITINGVALUESYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVCElectrostaticdischargecapacitorHumanbodymodel;-2kVvoltageC=250pF;R=1.5kΩOVERVOLTAGECLAMPINGLIMITINGVALUESAtadrainsourcevoltageabove50VthepowerMOSFETisactivelyturnedontoclampovervoltagetransients.SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITInductiveloadturn-offIDM=8A;VDD≤20VEDSMNon-repetitiveclampingenergyTmb≤25˚C-100mJEDRMRepetitiveclampingenergyTmb≤95˚C;f=250Hz-20mJOVERLOADPROTECTIONLIMITINGVALUEWithanadequateprotectionsupplyprovidedviatheinputpin,TOPFETcanprotectitselffromtwotypesofoverload-overtemperatureandshortcircuitload.SYMBOLPARAMETERREQUIREDCONDITIONMIN.MAX.UNITVDSDrainsourcevoltage34V≤VIS≤5.5V035VTHERMALCHARACTERISTICSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITThermalresistanceRthj-mbJunctiontomountingbase--2.53.1K/WRthj-aJunctiontoambientminimumfootprintFR4PCB-71.4-K/W1Priortotheonsetofovervoltageclamping.Forvoltagesabovethisvalue,safeoperationislimitedbytheovervoltageclampingenergy.2AhigherTjisallowedasanoverloadconditionbutatthethresholdTj(TO)theovertemperaturetripoperatestoprotecttheswitch.3Allcontrollogicandprotectionfunctionsaredisabledduringconductionofthesourcedraindiode.May20012Rev1.300˚C≤Tmb≤150˚C;typicalsareforTmb=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITOff-stateVIS=0VV(CL)DSSDrain-sourceclampingvoltageID=10mA50--VIDM=1A;tp≤300µs;δ≤0.01506070VIDSSDrainsourceleakagecurrentVDS=40V--100µATmb=25˚C-0.110µAOn-stateIDM=3A;tp≤300µs;δ≤0.01RDS(ON)Drain-sourceresistanceVIS≥4.4V--190mΩTmb=25˚C-68100mΩVIS≥4V--200mΩTmb=25˚C-72105mΩOVERLOADCHARACTERISTICS-40˚C≤Tmb≤150˚Cunlessotherwisespecified.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITShortcircuitloadVDS=13VIDDraincurrentlimitingVIS=5V;Tmb=25˚C81216A4.4V≤VIS≤5.5V6-18A4V≤VIS≤5.5V5-18AOverloadprotectionVIS=5V;Tmb=25˚CPD(TO)OverloadpowerthresholddevicetripsifPDPD(TO)205580WTDSCCharacteristictimewhichdeterminestriptime1200350600µsOvertemperatureprotectionTj(TO)Thresholdjunction150170-˚Ctemperature21TriptimetdscvarieswithoverloaddissipationPDaccordingtotheformulatdsc≈TDSC/ln[PD/PD(TO)].2ThisisindependentofthedV/dtofinputvoltageVIS.May20013Rev1.300˚C≤Tmb≤150˚C;typicalsareforTmb=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITVIS(TO)InputthresholdvoltageVDS=5V;ID=1mA0.6-2.4VTmb=25˚C1.11.62.1VIISInputsupplycurrentnormaloperation;VIS=5V100220400µAVIS=4V80195330µAIISLInputsupplycurrentprotectionlatched;VIS=5V200400650µAVIS=3V130250430µAVISRProtectionresetvoltage1resettimetr≥100µs1.522.9VtlrLatchresettimeVIS1=5V,VIS21V1040100µsV(CL)ISInputclampingvoltageII=1.5mA5.5-8.5VRIGInputseriesresistance2Tmb=25˚C-33-kΩtogateofpowerMOSFETSWITCHINGCHARACTERISTICSTmb=25˚C;VDD=13V;resistiveloadRL=4Ω.Refertowaveformfigureandtestcircuit.SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITtdonTurn-ondelaytimeVIS=5V-1020µstrRisetime-2040µstdoffTurn-offdelaytimeVIS=0V-3060µstfFalltime-2040µs1Theinputvoltagebelowwhichtheoverloadprotectioncircuitswillbereset.2