BSS84LT1G中文资料

SemiconductorComponentsIndustries,LLC,2004June,2004−Rev.51PublicationOrderNumber:BSS84LT1/DBSS84LT1PowerMOSFET130mA,50VP−ChannelSOT−23TheseminiaturesurfacemountMOSFETsreducepowerlossconserveenergy,makingthisdeviceidealforuseinsmallpowermanagementcircuitry.TypicalapplicationsareDC−DCconverters,loadswitching,powermanagementinportableandbattery−poweredproductssuchascomputers,printers,cellularandcordlesstelephones.Features•EnergyEfficient•MiniatureSOT−23SurfaceMountPackageSavesBoardSpace•Pb−FreePackageisAvailableMAXIMUMRATINGS(TJ=25°Cunlessotherwisenoted)RatingSymbolValueUnitDrain−to−SourceVoltageVDSS50VdcGate−to−SourceVoltage−ContinuousVGS±20VdcDrainCurrent−Continuous@TA=25°C−PulsedDrainCurrent(tp≤10s)IDIDM130520mATotalPowerDissipation@TA=25°CPD225mWOperatingandStorageTemperatureRangeTJ,Tstg−55to150°CThermalResistance−Junction−to−AmbientRJA556°C/WMaximumLeadTemperatureforSolderingPurposes,for10secondsTL260°CMaximumratingsarethosevaluesbeyondwhichdevicedamagecanoccur.Maximumratingsappliedtothedeviceareindividualstresslimitvalues(notnormaloperatingconditions)andarenotvalidsimultaneously.Iftheselimitsareexceeded,devicefunctionaloperationisnotimplied,damagemayoccurandreliabilitymaybeaffected.312P−Channel130mA,50VRDS(on)=10
−23CASE318STYLE21PDMPD=DeviceCodeM=DateCodeMARKINGDIAGRAM&PINASSIGNMENT321DrainGate213SourceDevicePackageShipping†ORDERINGINFORMATIONBSS84LT1SOT−233000Tape&ReelBSS84LT1GSOT−23(Pb−Free)3000Tape&Reel†Forinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/D.BSS84LT1(TA=25°Cunlessotherwisenoted)CharacteristicSymbolMinTypMaxUnitOFFCHARACTERISTICSDrain−to−SourceBreakdownVoltage(VGS=0Vdc,ID=250Adc)V(BR)DSS50−−VdcZeroGateVoltageDrainCurrent(VDS=25Vdc,VGS=0Vdc)(VDS=50Vdc,VGS=0Vdc)(VDS=50Vdc,VGS=0Vdc,TJ=125°C)IDSS−−−−−−0.11560AdcGate−BodyLeakageCurrent(VGS=±20Vdc,VDS=0Vdc)IGSS−−±10nAdcONCHARACTERISTICS(Note1)Gate−SourceThreadedVoltage(VDS=VGS,ID=250A)VGS(th)0.9−2.0VdcStaticDrain−to−SourceOn−Resistance(VGS=5.0Vdc,ID=100mAdc)RDS(on)−5.010
TransferAdmittance(VDS=25Vdc,ID=100mAdc,f=1.0kHz)|yfs|50−−mSDYNAMICCHARACTERISTICSInputCapacitanceVDS=5.0VdcCiss−30−pFOutputCapacitanceVDS=5.0VdcCoss−10−TransferCapacitanceVDG=5.0VdcCrss−5.0−SWITCHINGCHARACTERISTICS(Note2)Turn−OnDelayTimetd(on)−2.5−nsRiseTimeVDD=−15Vdc,ID=−2.5Adc,tr−1.0−Turn−OffDelayTimeVDD=−15Vdc,ID=−2.5Adc,RL=50
td(off)−16−FallTimetf−8.0−GateChargeQT−6000−pCSOURCE−DRAINDIODECHARACTERISTICSContinuousCurrentIS−−0.130APulsedCurrentISM−−0.520ForwardVoltage(Note2)VGS=0V,IS=130mAVSD−−2.2V1.PulseTest:PulseWidth≤300s,DutyCycle≤2%.2.Switchingcharacteristicsareindependentofoperatingjunctiontemperature.TYPICALELECTRICALCHARACTERISTICS00.30.40.10.60.2Figure1.TransferCharacteristics11.522.53ID,DRAINCURRENT(AMPS)VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)Figure2.On−RegionCharacteristicsVDS=10V150°C25°C-55°C0241000.150.2VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)ID,DRAINCURRENT(AMPS)60.0580.30.13.50.50.25139573.25V2.75V2.25V2.5V3.0VVGS=3.5V40.350.40.50.45TJ=25°CBSS84LT1(on),DRAIN-TO-SOURCERESISTANCE(NORMALIZED)RDS(on),DRAIN-TO-SOURCERESISTANCE(OHMSFigure3.On−ResistanceversusDrainCurrent00.20.40.6256Figure4.On−ResistanceversusDrainCurrentID,DRAINCURRENT(AMPS)Figure5.On−ResistanceVariationwithTemperature10.0010.11TJ,JUNCTIONTEMPERATURE(°C)Figure6.GateChargeVSD,DIODEFORWARDVOLTAGE(VOLTS)Figure7.BodyDiodeForwardVoltageID,DIODECURRENT(AMPS)25°CVGS=4.5VVGS=10VID=0.52A-
55-54595145TJ=150°C40.60.800.51.01.530.01-55°C25°C2.0RDS(on),DRAIN-TO-SOURCERESISTANCE(OHMS00.20.40.6256ID,DRAINCURRENT(AMPS)VGS=10V43VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)0620QT,TOTALGATECHARGE(pC)84500VDS=40VTJ=25°C1000ID=0.5A15000.10.30.5150°C-55°C74.55.53.52.56.50.10.30.51.221.41.61.8VGS=4.5VID=0.13A20002.53.0150°C25°C-55°C8975173BSS84LT1−23(TO−236)CASE318−08ISSUEAH*ForadditionalinformationonourPb−Freestrategyandsolderingdetails,pleasedownloadtheONSemiconductorSolderingandMountingTechniquesReferenceManual,SOLDERRM/D.SOLDERINGFOOTPRINT*
mminchesSCALE10:10.80.0310.90.0350.950.0370.950.0372.00.079DJKLACBSHGV312DIMAMINMAXMINMAXMILLIMETERS0.11020.11972.803.04INCHESB0.04720.05511.201.40C0.03500.04400.891.11D0.01500.02000.370.50G0.07010.08071.782.04H0.00050.00400.0130.100J0.00340.00700.0850.177K0.01400.02850.350.69L0.03500.04010.891.02S0.08300.10392.102.64V0.01770.02360.450.60NOTES:1.DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982.2.CONTROLLINGDIMENSION:INCH.3.MAXIMUMLEADTHICKNESSINCLUDESLEADFINISHTHICKNESS.MINIMUMLEADTHICKNESSISTHEMINIMUMTHICKNESSOFBASEMATERIAL.4.318-03AND-07OBSOLETE,NEWSTANDARD318-08.ONSemiconductorandareregisteredtrademarksofSemiconductorComponentsIndustries,LLC(SCILLC).SCILLCreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpu