IRLIZ44N中文资料

IRLIZ44NHEXFET®PowerMOSFETPD-9.1498ASDGVDSS=55VRDS(on)=0.022ΩID=30AlLogic-LevelGateDrivelAdvancedProcessTechnologylIsolatedPackagelHighVoltageIsolation=2.5KVRMS…lSinktoLeadCreepageDist.=4.8mmlFullyAvalancheRatedTO-220FULLPAKFifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications.TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.Themouldingcompoundusedprovidesahighisolationcapabilityandalowthermalresistancebetweenthetabandexternalheatsink.Thisisolationisequivalenttousinga100micronmicabarrierwithstandardTO-220product.TheFullpakismountedtoaheatsinkusingasinglecliporbyasinglescrewfixing.8/25/97DescriptionParameterTyp.Max.UnitsRθJCJunction-to-Case–––3.3RθJAJunction-to-Ambient–––65ThermalResistanceParameterMax.UnitsID@TC=25°CContinuousDrainCurrent,VGS@10V30ID@TC=100°CContinuousDrainCurrent,VGS@10V22AIDMPulsedDrainCurrent†160PD@TC=25°CPowerDissipation45WLinearDeratingFactor0.3W/°CVGSGate-to-SourceVoltage±16VEASSinglePulseAvalancheEnergy‚†210mJIARAvalancheCurrent†25AEARRepetitiveAvalancheEnergy4.5mJdv/dtPeakDiodeRecoverydv/dtƒ†5.0V/nsTJOperatingJunctionand-55to+175TSTGStorageTemperatureRangeSolderingTemperature,for10seconds300(1.6mmfromcase)°CMountingtorque,6-32orM3screw10lbf•in(1.1N•m)AbsoluteMaximumRatings°C/WIRLIZ44NParameterMin.Typ.Max.UnitsConditionsV(BR)DSSDrain-to-SourceBreakdownVoltage55––––––VVGS=0V,ID=250μAΔV(BR)DSS/ΔTJBreakdownVoltageTemp.Coefficient–––0.070–––V/°CReferenceto25°C,ID=1mA†––––––0.022VGS=10V,ID=17A„––––––0.025ΩVGS=5.0V,ID=17A„––––––0.035VGS=4.0V,ID=14A„VGS(th)GateThresholdVoltage1.0–––2.0VVDS=VGS,ID=250μAgfsForwardTransconductance21––––––SVDS=25V,ID=25A†––––––25μAVDS=55V,VGS=0V––––––250VDS=44V,VGS=0V,TJ=150°CGate-to-SourceForwardLeakage––––––100nAVGS=16VGate-to-SourceReverseLeakage––––––-100VGS=-16VQgTotalGateCharge––––––48ID=25AQgsGate-to-SourceCharge––––––8.6nCVDS=44VQgdGate-to-Drain(Miller)Charge––––––25VGS=5.0V,SeeFig.6and13„†td(on)Turn-OnDelayTime–––11–––VDD=28VtrRiseTime–––84–––nsID=25Atd(off)Turn-OffDelayTime–––26–––RG=3.4Ω,VGS=5.0VtfFallTime–––15–––RD=1.1Ω,SeeFig.10„†Betweenlead,6mm(0.25in.)frompackageandcenterofdiecontactCissInputCapacitance–––1700–––VGS=0VCossOutputCapacitance–––400–––VDS=25VCrssReverseTransferCapacitance–––150–––ƒ=1.0MHz,SeeFig.5†CDraintoSinkCapacitance–––12–––ƒ=1.0MHzElectricalCharacteristics@TJ=25°C(unlessotherwisespecified)IGSSIDSSDrain-to-SourceLeakageCurrentSDGLDInternalDrainInductance–––4.5–––LSInternalSourceInductance–––7.5–––RDS(on)StaticDrain-to-SourceOn-ResistancenHpFSDGNotes:Repetitiverating;pulsewidthlimitedbymax.junctiontemperature.(Seefig.11)‚VDD=15V,startingTJ=25°C,L=470μHRG=25Ω,IAS=25A.(SeeFigure12)…t=60s,ƒ=60HzƒISD≤25A,di/dt≤270A/μs,VDD≤V(BR)DSS,TJ≤175°C†UsesIRLZ44Ndataandtestconditions„Pulsewidth≤300μs;dutycycle≤2%.ParameterMin.Typ.Max.UnitsConditionsISContinuousSourceCurrentMOSFETsymbol(BodyDiode)––––––showingtheISMPulsedSourceCurrentintegralreverse(BodyDiode)†––––––p-njunctiondiode.VSDDiodeForwardVoltage––––––1.3VTJ=25°C,IS=17A,VGS=0V„trrReverseRecoveryTime–––80120nsTJ=25°C,IF=25AQrrReverseRecoveryCharge–––210320μCdi/dt=100A/μs„†tonForwardTurn-OnTimeIntrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)Source-DrainRatingsandCharacteristicsA30160IRLIZ44NFig4.NormalizedOn-ResistanceVs.TemperatureFig2.TypicalOutputCharacteristicsFig1.TypicalOutputCharacteristicsFig3.TypicalTransferCharacteristics11010010000.1110100I,Drain-to-SourceCurrent(A)DV,Drain-to-SourceVoltage(V)DSA20μsPULSEWIDTHT=25°CJVGSTOP15V12V10V8.0V6.0V4.0V3.0VBOTTOM2.5V2.5V11010010000.1110100I,Drain-to-SourceCurrent(A)DV,Drain-to-SourceVoltage(V)DSA20μsPULSEWIDTHT=175°CVGSTOP15V12V10V8.0V6.0V4.0V3.0VBOTTOM2.5V2.5VJ11010010002.03.04.05.06.07.08.09.0T=25°CJGSV,Gate-to-SourceVoltage(V)DI,Drain-to-SourceCurrent(A)T=175°CJAV=25V20μsPULSEWIDTHDS0.00.51.01.52.02.53.0-60-40-20020406080100120140160180JT,JunctionTemperature(°C)R,Drain-to-SourceOnResistanceDS(on)(Normalized)V=10VGSAI=41ADIRLIZ44NFig6.TypicalGateChargeVs.Gate-to-SourceVoltageFig8.MaximumSafeOperatingAreaFig5.TypicalCapacitanceVs.Drain-to-SourceVoltageFig7.TypicalSource-DrainDiodeForwardVoltage040080012001600200024002800110100C,Capacitance(pF)DSV,Drain-to-SourceVoltage(V)AV=0V,f=1MHzC=C+C,CSHORTEDC=CC=C+CGSissgsgddsrssgdossdsgdCissCossCrss03691215010203040506070Q,TotalGateCharge(nC)GV,Gate-to-SourceVoltage(V)GSAFORTESTCIRCUITSEEFIGURE13V=44VV=28VI=25ADSDSD1010010000.40.81.21.62.02.4T=25°CJV=0VGSV,Source-to-DrainVoltage(V)I,ReverseDrainCurrent(A)SDSDAT=175°CJ1101001000110100V,Drain-to-SourceVoltage(V)DSI,DrainCurrent(A)OPERATIONINTHISAREALIMITEDBYRDDS(on)10μs100μs1ms10msAT=25°CT=175°CSinglePulseCJIRLIZ44NFig10a.SwitchingTimeTestCircuitVDS90%10%VGStd(on)trtd(off)tfFig10b.SwitchingTimeWaveformsVDSPul