IGBT-双脉冲测试

IGBTDoublePulseTestPage2Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTDoublePulseTest!Basicprincipleofdoublepulsetest!SafeoperationofIGBT!Whatcanbedonewithdoublepulsetest!ImpactofRg,CgeonIGBTswitchingPage3Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTMeasurementsTurn-on&Turn-off!TestSetupPage4Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTMeasurementsTurn-on&Turn-off!BasicWaveFormsPage5Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTMeasurementsTurn-on&Turn-off!SampleWaveFormsPage6Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTMeasurementsShortCircuitI&II!TestSetupPage7Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7TwoTypesofShort-circuits!Beforeshort-circuitoccurs,IGBTisOFF&blockstheDC-busvoltage.!Theshort-circuitiscreatedbytheswitch-onoftheIGBT.!Beforetheshort-circuitoccurs,IGBTisON&insaturationregion.!Theshort-circuitiscreatedbyapplyingtheDC-busvoltageonC-EoftheIGBT.VCEde-saturatesfromVCEsatvalue!VCEneverreachesVCEsatvalue!Page8Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7DiodeMeasurements!TestSetupPage9Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7DiodeMeasurementsRecovery!BasicWaveFormsPage10Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7DiodeMeasurementsRecovery!SampleWaveFormQrErecdiF/dtIF=0-2%IRM10%VR-2%IRM50%IF-50%IRMErec:10%VRPage11Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7DoublePulseTest•IGBTcharacterization•Comparabletestconditionsasdatasheet•ResultsclosetoInfineondatasheetexpected.•Customer’sapplicationsetup•Helpfulforfurtherdesign•Differenttestconditions,anddifferentresultsexpected•BothIGBTinthe(2-level)legtobetested–differentcommutationloop&differentbehaviorPage12Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTDoublePulseTest!Basicprincipleofdoublepulsetest!SafeoperationofIGBTIGBTRBSOADiodeSOAShortcircuitVgelimitOthers–Nottestedbydoublepulsetest!Whatcanbedonewithdoublepulsetest!ImpactofRg,CgeonIGBTswitchingPage13Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–IGBTRBSOA!Pulsecurrent(ICRMIRBSOA)ICRMisdefinedasrepetitiveturnonpulsecurrent,relatedtoIGBTthermalIRBSOAisdefinedasmaximumturnoffcurrentICRMIRBSOAVCEICVGEICRMmaybeexceededduringturnonduetoreverserecovery.1msisjusttestcondition,realpulsewidthisdependonthermalPage14Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–IGBTRBSOA!Blockingvoltage(VCES)VCESspecifiedatTj=25℃.HigherTj,higherblockingvoltageRBSOAChiplevelModulelevelDuetostrayinductanceinsidemoduleδLdtdiV*/=∆VCESiseasiesttobeexceedduringturnoff,duetoexternalandinternalstrayinductanceVCEScannotbeviolatedatanycondition,otherwiseIGBTwouldbreakthoughPage15Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTDoublePulseTest!Basicprincipleofdoublepulsetest!SafeoperationofIGBTIGBTRBSOADiodeSOAShortcircuitVgelimitOthers–Nottestedbydoublepulsetest!Whatcanbedonewithdoublepulsetest!ImpactofRg,CgeonIGBTswitchingPage16Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–DiodeSOA!Blockingvoltage(VRRM)!Pulsecurrent(ICRM)SimilardefinitionofVCESatTj25℃SimilardefinitionofICRM,twotimeofIF.Page17Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–DiodeSOA!DiodeSOA00,511,522,50100020003000VR[V]MoreseverewithsmallcurrentatlowtemperatureduetosnapoffandoscillationHighvoltagemodulespecifytheSOAofdiode.Notonlypeakcurrentandvoltageislimited,peakpoweralsoisrestricted.Theinstantaneouspeakpowershouldneverexceedthelimitforthemax.powergivenintheSOAdiagram.200010000100020003000time[400ns/div]VR[500V/div]IR[500A/div]123!00100020003000010002000VR(t)[V]IR(t)[A]locusiR(t)*vR(t)123!0Page18Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTDoublePulseTest!Basicprincipleofdoublepulsetest!SafeoperationofIGBTIGBTRBSOADiodeSOAShortcircuitVgelimitOthers–Nottestedbydoublepulsetest!Whatcanbedonewithdoublepulsetest!ImpactofRg,CgeonIGBTswitchingPage19Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–shortcircuit!Shortcircuitcurrent(ISC)SC1:ShortbeforeSwitchOnSC2:ShortafterSwitchOnVCEICVGEVCEICVGETheshortcircuitcurrentvalueisatypicalvalue.Inapplications,SC1andSC2canonlybesafelyturnedoffwhendesaturated,theshortcircuittimeshouldnotexceed10us.Page20Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–shortcircuit!Shortcircuitcondition:¬VGE:gatevoltage(15V)¬VCC:DCbusvoltage¬Tvj:shortcircuitstarttemperatureVGEISCtSCItisimportanttoclampgatevoltageduringshortcircuitPage21Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTDoublePulseTest!Basicprincipleofdoublepulsetest!SafeoperationofIGBTIGBTRBSOADiodeSOAShortcircuitVgelimitOthers–Nottestedbydoublepulsetest!Whatcanbedonewithdoublepulsetest!ImpactofRg,CgeonIGBTswitchingPage22Copyright©InfineonTechnologies2008.Allrightsreserved.2010-6-7IGBTSafeOperation–VgelimitGate-emittervoltage(Vge)GateClamping:!Limitati