Designing-of-IGBT-Gate-Driver-&-Protection

InfluenceofRge,CgeandLgonIGBTSwitchingBehaviorPage25/19/2011Authorforinternaluseonlytemperature•Tj150°C•Tcase-40°Ccurrent•ICxtlongtimeover-Current•ICshortcircuitcurrent10µs•highdi/dtmechanicalstress•shock&vibration•forcesonterminals•heatsinkbendingvoltage•VCEOver-voltage•VGEOver-voltage•highdv/dtfaultycontrol•shootthrough•highfswronghandling•ESD•wrongmountingproc.thermalstress•thermalcycling•powercyclingbyHowtodestroyanIGBT?Copyright©InfineonTechnologies2009.Allrightsreserved.IGBTdrivingDrivingvoltagelevelEffectofturnon/off¬Rge,Cge,Lg¬DrivingcapabilityIsolationProtection¬Parasiticturnon¬Overvoltage¬Shortcircuit/overcurrentCopyright©InfineonTechnologies2009.Allrightsreserved.DrivingvoltagelevelEffecttoVcesatVge，VcesatTvj=125CTvj=125CEffecttoshortcicuitVge，Isc（tsc）note：max.allowedVgeis20VPositivevoltageCopyright©InfineonTechnologies2009.Allrightsreserved.DrivingvoltagelevelMillercapabilityeffectNegativevoltage¬Toguaranteesafetyoffstate,avoidparasiticmillerturnon¬Turnondelayincrease(deadtime)¬SlightlyreducetfandEoff¬IncreasedrivingpowerCopyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offRgonControlofdv/dtanddi/dtwithgateresistorTurn-onwithnominalgateresistor(datasheetvalue):dv/dt=0.9kV/µsdi/dt=6.4kA/µsICpeak=2.4kAEon=816mWsTurn-onwithsmallerthannominalgateresistor:dv/dt=1.4kV/µsdi/dt=8.7kA/µsICpeak=2.7kAEon=544mWsTurn-onwithlargerthannominalgateresistor:dv/dt=0.3kV/µsdi/dt=3.0kA/µsICpeak=1.8kAEon=2558mWsCopyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offRgoffControlofdv/dtanddi/dtwithgateresistor•dv/dtiscontrollablewithgateresistor.Alargerresistorwillresultinasmallerdv/dt.•di/dtisonlycontrollableifthegatevoltagedoesn’tdropbelowtheMillerPlateaulevelbeforeICstartstodecrease.Thisisingeneralthecaseforagateresistorvalueclosetothedatasheetvalue.Withlargerresistorsacontrolofdi/dtstartstowork.Copyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offTypicalsolutionforDriverICPreferredsolutionforBipolarBoosterStages(VRGBVEBO)NotrecommendedforBipolarBoosterStages(onlyforMOSFETBoosterStages):VoltagedropoverRGonandRGoffmayexceedtheEmitter-BaseBreakdownVoltageBVEBOXRgon/RgoffCopyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offCgeIndependentlycontrolofdv/dtanddi/dtCopyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offLgWith20cmtwistcableWith100cmtwistcableEon:236mJVg_peak:16.5VIc_peak:1.7kAEon:106mJVg_peak:20.5VIc_peak:2.0kACopyright©InfineonTechnologies2009.Allrightsreserved.Effectofturnon/offDrivingcapability¬Peakcurrentcapability¬PowercapabilityMaximumdriverpeakcurrentU=30V@15VswitchingDriverpowerinternGexternGG(min)GmaxRRΔURΔUI2issGateGateGateDrivertotΔUC3...5fPorΔUQfPPPPSlowdownturnon/offspeedDriverlossesVgegoesdownPowersupplylossesCopyright©InfineonTechnologies2009.Allrightsreserved.Isolation+-OptocouplerOpticalFiberHighisolationcapabilityAgingofelectricalcharacteristicReducedreliabilityduetoagingNoenergytransmissionMonolithicLevelShifterCosteffectiveIntegrationoflogicsuitableNogalvanicisolationEMIsensitivityNoenergytransmissionDiscreteTransformerVeryhighisolationCapabilityEnergytransmissionpossibleExpensiveDeviceVolumeCorelessTransformer(CLT)HighisolationcapabilityVerycosteffectiveEasyintegrationoflogicfunctionNoenergytransmissionCopyright©InfineonTechnologies2009.Allrightsreserved.ProtectionUVLOInterlock/generatingdeadtimeVgeovervoltageParasiticturnonShortcircuitprotectionOvervoltageprotection(forshortcircuitoff)¬ActiveClamping¬DVRC(DynamikVoltageRaiseControl)¬di/dt-Feedback¬Soft-Shut-Down¬Two-LevelTurn-offCopyright©InfineonTechnologies2009.Allrightsreserved.ProtectionUVLO¬AvoiddrivingIGBTwithlowvoltagecausingthermalissue¬AvoidseriesbreakdownInterlock/generatingdeadtime¬Avoidshortthroughbysoftwaremistake¬HardwaredeadtimeshouldbeshorterthansoftwaredeadtimeCopyright©InfineonTechnologies2009.Allrightsreserved.Protection¬LimitationofincreaseofgatevoltageduetopositivefeedbackoverCGCandduetodi/dt¬LimitationofshortcircuitcurrentsMethode1Gate-SupplyClampingMethode2Gate-EmitterClampingVgeovervoltageCopyright©InfineonTechnologies2009.Allrightsreserved.ProtectionParasiticturnon¬minusvoltageoff¬separategateresistors,usingsmallRgoffandbigRgon¬AdditionalgateemittercapacitortoshunttheMillercurrent¬ActiveMillerclampingCopyright©InfineonTechnologies2009.Allrightsreserved.ProtectionShortcircuitprotectionDesaturationdetectIcVceOCSCIIVceIcSCIPage21ForinternaluseonlyCurrentparametersShortcircuitcondition:¬VGE:gatevoltage(15V)¬VCC:DCbusvoltage¬Tvj:shortcircuitstarttemperatureInfineontestshortcircuitatmaximumoperationTjVGEISCtSCPage22Copyright©InfineonTechnologies2007.Allrightsreserved.22.05.2007ForinternaluseonlyArm-short@Tvj=25°C,Rg=33ΩVce(200V/div)Vge_pk=12v(5V/div)Isc(50A/div)Time2µs/divVge_pk=13v(5V/div)Vge_pk=15v(5V/div)Vge_pk=17v(5V/div)Copyright©InfineonTechnologies2009.Allrightsreserved.ProtectionShortcircuitprotectionDesaturationdetectBasedonfixedreferencevoltageBasedonva