可靠性介绍Reliability-Introduction

“FairchildSemiconductor(Suzhou)iscommittedtofullcustomer’ssatisfaction”FSSZFSSZReliabilityReliabilityMonitoringProgramMonitoringProgramHTRBHTGBHTSLQty77*3ReadPoint@168hrsTMCLHASTTHBTPRCLRoomTMCLAgingE/TACLVAmbientReadPointReadPointReadPointReadPointReadPointReadPointReadPointReadPoint@500hrs@100cycs@48hrs@168hrs@1kcycs@1Khours@500cycs@1KhoursE/TE/TE/TE/TE/TSEMSEMSEMReadPointReadPointReadPointReadPointReadPointReadPointReadPointReadPoint@1000hrs@500cycs@96cycs@500hrs@5kcycs@4Khours@1.5Kcycs@4KhoursE/TE/TE/TE/TE/TSEMSEMSEMReadPointReadPoint@1000hrs@10K/8572cycsE/TE/TSamplesPullingPreconditioningQ'ty:77*5WhiskerQ'ty:18*3V/IV/ISMDMicrosoftExcelWkht“FairchildSemiconductor(Suzhou)iscommittedtofullcustomer’ssatisfaction”FSSZFSSZReliabilityReliabilityLabCapabilitiesLabCapabilities--11Autoclave(ACLV)Autoclave(ACLV)高温高湿高压蒸煮试验高温高湿高压蒸煮试验TestDescription(JESD22-A102)*Nobiasisappliedtothedevicesduringthistest.*121℃,100%RH,15PSIG(JESD22-A102)Purpose*Evaluatethemoistureresistanceintegrityofnohermeticpackagedsolidstatedevicesusingmoisturecondensingormoisturesaturatedsteamenvironments.*Identifyfailuremechanismsinternaltothepackageandisdestructive.Effects*Corrodeddeviceterminals/leadsortheformationofconductingmatterbetweentheterminals.TemperatureCycle(TMCL)TemperatureCycle(TMCL)高低温循环试验高低温循环试验TestDescription(JESD22-A104)*Nobiasisappliedtothedevicesduringthistest.*-65℃~150℃-55℃~150℃or-40℃~125℃Purpose*Evaluatethethermo-mechanicalpropertiesofthecomplexICpackage.*Detectingstressrelieffailuresfromthemismatchinthermalcoefficientsofexpansionforthedie/packagestructure.Effects*Plasticdeformation,crackpropagation,crackedpassivation,thinfilmcrack*Interlayerdielectricvoidsorcracks,displacedmetallization,stress-inducedmetallizationvoids,brokenorshearedbondwiresandbonds,bondpadcratering,dieattachseparationorfailure,AirtoAirLiquidtoLiquid“FairchildSemiconductor(Suzhou)iscommittedtofullcustomer’ssatisfaction”HighTemperatureReverseBiasHighTemperatureReverseBiasTest(HTRB)Test(HTRB)高温反偏压试验高温反偏压试验TestDescription(JESD22-A108)*Usetestboards*HTRBtestisconfiguredtoreversebiasmajorpowerhandlingjunctionsofthedevicesamples.*150℃175℃or125℃Multi-biasedandintelligentleakagemonitoringPurpose**Devicesarecharacteristicallyoperatedinastaticoperatingmodeatornear,80%ofmaximum-ratedbreakdownvoltageand/orcurrentlevelstodeterminetheeffectsofbiasconditionsandtemperatureonsolidstatedevicesovertime.Effects*SiliconDefects,oxidedefects,manufacturingdefects,dielectricBreakdown.*Ioniccontamination,mobilecharges,includingsurfaceinversion.electromigration(underhighcurrentdensityconditions)HighTemperatureGateBias(HTGB)HighTemperatureGateBias(HTGB)高温栅极偏压试验高温栅极偏压试验(JESD22-A108)TestDescription*HTGBtestbiasesgateorotheroxidesofthedevicessamples.*150℃or175℃,BiasedandintelligentleakagemonitoringPurpose*Devicearenormallyoperatedinastaticmodeat,ornear,100%ofmaximum-ratedoxidebreakdownvoltagelevels.Theparticularbiasconditionsshouldbedeterminedtobiasthemaximumnumberofgateinthedevice.Effects*SiliconDefects,oxidedefects,manufacturingdefects,dielectricBreakdown.*Ioniccontamination,mobilecharges,includingsurfaceinversion.electromigration(underhighcurrentdensityconditions)FSSZFSSZReliabilityReliabilityLabCapabilitiesLabCapabilities--22“FairchildSemiconductor(Suzhou)iscommittedtofullcustomer’ssatisfaction”TemperatureHumidityBias(THBT)TemperatureHumidityBias(THBT)恒温恒湿偏压试验恒温恒湿偏压试验TestDescription(JESD22-A101)*UseTestboards*85℃/85%RH,BiasedPurpose*Evaluatetheintegrityofplasticpackagestomoistureingresstothediesurface.Underconditionsofhighhumidityandtemperature,moisturecanpermeatethemoldingcompoundortravelupleads.Effects*Corrosionsitesatornearbondpads,exposedmetalatdefectsinpassivation,Anodic-halides,Cathodic-phosphoruslevelsinglass,openmetallization*ShortingacrossmetallicconductorsthroughinsulatorsandGold,copper,silverdendrites.*Mobilechargesandtopsurfacecharge.HighTemperatureStorageLifetestHighTemperatureStorageLifetest(HTSL)(HTSL)高温储存试验高温储存试验TestDescription(JESD22-A103)*150℃or175℃Purpose*Detectinstabilitymechanismsassociatedwithshelflife(storage).*Determiningtheeffectsofstoringdevicesatelevatedtemperatureswithoutelectricalapplied.Effects*Intermetallicgrowthatbondsofdissimilarmetals-Goldwirebondeddevices.*Chemicalreactions-Moldingcompoundordieattachimpuritiesreleased.ChargeLossinprogrammableproductsduetodefectsinoxidesFSSZFSSZReliabilityReliabilityLabCapabilitiesLabCapabilities--33“FairchildSemiconductor(Suzhou)iscommittedtofullcustomer’ssatisfaction”PreconditioningPreconditioning预处理试验预处理试验TesterDescription(JESD22-A113)*AcousticMicroscopyInspections-C-SCAN-T/C(5Cycles)-Bake(24hrs125C)-Soak-IRReflow(3cycles)-fluxapplicationandAcousticMicroscopyInspections-C-SCANSoaktimeinhoursPurpose*SimulatestressesencounteredbysurfacemountedpackagesfromthetimeproductsareshippedtocustomersthroughtheassemblyprocessontoPCboards.Effects*Popcorn,external/Internalpackagecracking,diesurfacedelamination,diepaddleordieattachdelamination,electricalfailureduetoballbondliftsorbondwireshear,crackedDie.FSSZFSSZReliabi