LM5110-1MX中文资料

LM5110Dual5ACompoundGateDriverwithNegativeOutputVoltageCapabilityGeneralDescriptionTheLM5110DualGateDriverreplacesindustrystandardgatedriverswithimprovedpeakoutputcurrentandeffi-ciency.Each“compound”outputdriverstageincludesMOSandbipolartransistorsoperatinginparallelthattogethersinkmorethan5Apeakfromcapacitiveloads.CombiningtheuniquecharacteristicsofMOSandbipolardevicesreducesdrivecurrentvariationwithvoltageandtemperature.Sepa-rateinputandoutputgroundpinsprovideNegativeDriveCapabilityallowingtheusertodriveMOSFETgateswithpositiveandnegativeVGSvoltages.Thegatedrivercontrolinputsarereferencedtoadedicatedinputground(IN_REF).ThegatedriveroutputsswingfromVCCtotheoutputgroundVEEwhichcanbenegativewithrespecttoIN_REF.TheabilitytoholdMOSFETgatesoffwithanegativeVGSvolt-agereduceslosseswhendrivinglowthresholdvoltageMOSFETsoftenusedassynchronousrectifiers.Whendriv-ingwithconventionalpositiveonlygatevoltage,theIN_REFandVEEpinsareconnectedtogetherandreferencedtoacommonground.Under-voltagelockoutprotectionandashutdowninputpinarealsoprovided.Thedriverscanbeoperatedinparallelwithinputsandoutputsconnectedtodoublethedrivecurrentcapability.ThisdeviceisavailableintheSOIC-8andthethermally-enhancedLLP-10packages.FeaturesnIndependentlydrivestwoN-ChannelMOSFETsnCompoundCMOSandbipolaroutputsreduceoutputcurrentvariationn5Asink/3AsourcecurrentcapabilitynTwochannelscanbeconnectedinparalleltodoublethedrivecurrentnIndependentinputs(TTLcompatible)nFastpropagationtimes(25nstypical)nFastriseandfalltimes(14ns/12nsrise/fallwith2nFload)nDedicatedinputgroundpin(IN_REF)forsplitsupplyorsinglesupplyoperationnOutputsswingfromVCCtoVEEwhichcanbenegativerelativetoinputgroundnAvailableindualnon-inverting,dualinvertingandcombinationconfigurationsnShutdowninputprovideslowpowermodenSupplyrailunder-voltagelockoutprotectionnPin-outcompatiblewithindustrystandardgatedriversTypicalApplicationsnSynchronousRectifierGateDriversnSwitch-modePowerSupplyGateDrivernSolenoidandMotorDriversnPowerLevelShifterPackagenSOIC-8nLLP-10(4mmx4mm)OrderingInformationOrderNumberPackageTypeNSCPackageDrawingSuppliedAsLM5110-1/2/3MSOIC-8M08AShippedinanti-staticunitsLM5110-1/2/3MXSOIC-8M08A2500shippedinTape&ReelLM5110-1/2/3SDLLP-10SDC10A1000shippedinTape&ReelLM5110-1/2/3SDXLLP-10SDC10A4500shippedinTape&ReelOctober2003LM5110Dual5ACompoundGateDriverwithNegativeOutputVoltageCapability©2003NationalSemiconductorCorporationDS200792‘A’sidecontrolinputTTLcompatiblethresholds.33VEEPowergroundofthedriveroutputsConnecttoeitherpowergroundoranegativegatedrivesupply.44IN_B‘B’sidecontrolinputTTLcompatiblethresholds.57OUT_BOutputforthe‘B’sidedriver.Capableofsourcing3Aandsinking5A.VoltageswingofthisoutputisfromVCCtoVEE.68VCCPositivesupplyLocallydecoupletoVEEandIN_REF.79OUT_A.Outputforthe‘A’sidedriver.Capableofsourcing3Aandsinking5A.VoltageswingofthisoutputisfromVCCtoVEE.810nSHDNShutdowninputpinPullbelow1.5Vtoactivatelowpowershutdownmode.Note:Pins5and6areNoConnectforLLP-10package.ConfigurationTablePartNumber“A”OutputConfiguration“B”OutputConfigurationPackageLM5110-1MNon-InvertingNon-InvertingSOIC-8LM5110-2MInvertingInvertingSOIC-8LM5110-3MInvertingNon-InvertingSOIC-8LM5110-1SDNon-InvertingNon-InvertingLLP-10LM5110-2SDInvertingInvertingLLP-10LM5110-3SDInvertingNon-InvertingLLP-10LM5110(Note1)IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheNationalSemiconductorSalesOffice/Distributorsforavailabilityandspecifications.VCCtoVEE−0.3Vto15VVCCtoIN_REF−0.3Vto15VINtoIN_REF,nSHDNtoIN_REF−0.3Vto15VIN_REFtoVEE−0.3Vto5VStorageTemperatureRange,(TSTG)−55˚Cto+150˚CMaximumJunctionTemperature,(TJ(max))+150˚COperatingJunctionTemperature+125˚CESDRating2kVElectricalCharacteristicsTJ=−40˚Cto+125˚C,VCC=12V,VEE=IN_REF=0V,nSHDN=VCC,NoLoadonOUT_AorOUT_B,unlessotherwisespecified.SymbolParameterConditionsMinTypMaxUnitsVCCOperatingRangeVCC−IN_REFandVCC−VEE3.514VVCCRVCCUnderVoltageLockout(rising)VCC−IN_REF2.32.93.5VVCCHVCCUnderVoltageLockoutHysteresis230mVICCVCCSupplyCurrent(ICC)IN_A=IN_B=0V(5110-1)12mAIN_A=IN_B=VCC(5110-2)12IN_A=VCC,IN_B=0V(5110-3)12ICCSDVCCShutdownCurrent(ICC)nSHDN=0V1825µACONTROLINPUTSVIHLogicHigh1.752.2VVILLogicLow0.81.35VHYSInputHysteresis400mVIILInputCurrentLowIN_A=IN_B=VCC(5110-1-2-3)−10.11µAIIHInputCurrentHighIN_A=IN_B=VCC(5110-1)101825IN_A=IN_B=VCC(5110-2)−10.11IN_A=VCC(5110-3)-10.11IN_B=VCC(5110-3)101825SHUTDOWNINPUTISDPull-upCurrentnSHDN=0V−18−25µAVSDRShutdownThresholdnSHDNrising0.81.52.2VVSDHShutdownHysteresis165mVOUTPUTDRIVERSROHOutputResistance