FF450R12ME4

1技术信息/TechnicalInformationFF450R12ME4IGBT-模块IGBT-modulespreparedby:CUapprovedby:MKdateofpublication:2013-11-04revision:3.1ULapproved(E83335)EconoDUAL™3模块采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管带有温度检测NTCEconoDUAL™3modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandNTCVCES=1200VICnom=450A/ICRM=900A典型应用TypicalApplications••电机传动MotorDrives••伺服驱动器ServoDrives••UPS系统UPSSystems••风力发电机WindTurbines电气特性ElectricalFeatures••低VCEsatLowVCEsat••Tvjop=150°CTvjop=150°C机械特性MechanicalFeatures••标封装StandardHousingModuleLabelCodeBarcodeCode128DMX-CodeContentoftheCodeDigitModuleSerialNumber1-5ModuleMaterialNumber6-11ProductionOrderNumber12-19Datecode(ProductionYear)20-21Datecode(ProductionWeek)22-232技术信息/TechnicalInformationFF450R12ME4IGBT-模块IGBT-modulespreparedby:CUapprovedby:MKdateofpublication:2013-11-04revision:3.1IGBT,逆变器/IGBT,Inverter最大额定值/MaximumRatedValues集电极－发射极电压Collector-emittervoltageTvj=25°CVCES1200V连续集电极直流电流ContinuousDCcollectorcurrentTC=100°C,Tvjmax=175°CTC=25°C,Tvjmax=175°CICnomIC450675AA集电极重复峰值电流RepetitivepeakcollectorcurrenttP=1msICRM900A总功率损耗TotalpowerdissipationTC=25°C,Tvjmax=175°CPtot2250W栅极－发射极峰值电压Gate-emitterpeakvoltageVGES+/-20V特征值/CharacteristicValuesmin.typ.max.集电极－发射极饱和电压Collector-emittersaturationvoltageIC=450A,VGE=15VIC=450A,VGE=15VIC=450A,VGE=15VVCEsat1,752,002,052,10VVVTvj=25°CTvj=125°CTvj=150°C栅极阈值电压GatethresholdvoltageIC=17,0mA,VCE=VGE,Tvj=25°CVGEth5,25,86,4V栅极电荷GatechargeVGE=-15V...+15VQG3,30µC内部栅极电阻InternalgateresistorTvj=25°CRGint1,7Ω输入电容Inputcapacitancef=1MHz,Tvj=25°C,VCE=25V,VGE=0VCies28,0nF反向传输电容Reversetransfercapacitancef=1MHz,Tvj=25°C,VCE=25V,VGE=0VCres1,55nF集电极-发射极截止电流Collector-emittercut-offcurrentVCE=1200V,VGE=0V,Tvj=25°CICES3,0mA栅极-发射极漏电流Gate-emitterleakagecurrentVCE=0V,VGE=20V,Tvj=25°CIGES400nA开通延迟时间(电感负载)Turn-ondelaytime,inductiveloadIC=450A,VCE=600VVGE=±15VRGon=1,3Ωtdon0,190,220,22µsµsµsTvj=25°CTvj=125°CTvj=150°C上升时间(电感负载)Risetime,inductiveloadIC=450A,VCE=600VVGE=±15VRGon=1,3Ωtr0,060,070,07µsµsµsTvj=25°CTvj=125°CTvj=150°C关断延迟时间(电感负载)Turn-offdelaytime,inductiveloadIC=450A,VCE=600VVGE=±15VRGoff=1,3Ωtdoff0,490,580,62µsµsµsTvj=25°CTvj=125°CTvj=150°C下降时间(电感负载)Falltime,inductiveloadIC=450A,VCE=600VVGE=±15VRGoff=1,3Ωtf0,080,110,12µsµsµsTvj=25°CTvj=125°CTvj=150°C开通损耗能量(每脉冲)Turn-onenergylossperpulseIC=450A,VCE=600V,LS=35nHVGE=±15V,di/dt=7000A/µs(Tvj=150°C)RGon=1,3ΩEon15,026,028,5mJmJmJTvj=25°CTvj=125°CTvj=150°C关断损耗能量(每脉冲）Turn-offenergylossperpulseIC=450A,VCE=600V,LS=35nHVGE=±15V,du/dt=3100V/µs(Tvj=150°C)RGoff=1,3ΩEoff38,055,561,5mJmJmJTvj=25°CTvj=125°CTvj=150°C短路数据SCdataVGE≤15V,VCC=800VVCEmax=VCES-LsCE·di/dtISC1800ATvj=150°CtP≤10µs,结－外壳热阻Thermalresistance,junctiontocase每个IGBT/perIGBTRthJC0,066K/W外壳－散热器热阻Thermalresistance,casetoheatsink每个IGBT/perIGBTλPaste=1W/(m·K)/λgrease=1W/(m·K)RthCH0,03K/W在开关状态下温度TemperatureunderswitchingconditionsTvjop-40150°C3技术信息/TechnicalInformationFF450R12ME4IGBT-模块IGBT-modulespreparedby:CUapprovedby:MKdateofpublication:2013-11-04revision:3.1二极管,逆变器/Diode,Inverter最大额定值/MaximumRatedValues反向重复峰值电压RepetitivepeakreversevoltageTvj=25°CVRRM1200V连续正向直流电流ContinuousDCforwardcurrentIF450A正向重复峰值电流RepetitivepeakforwardcurrenttP=1msIFRM900AI2t-值I²t-valueVR=0V,tP=10ms,Tvj=125°CVR=0V,tP=10ms,Tvj=150°CI²t3500028500A²sA²s特征值/CharacteristicValuesmin.typ.max.正向电压ForwardvoltageIF=450A,VGE=0VIF=450A,VGE=0VIF=450A,VGE=0VVF1,651,651,652,10VVVTvj=25°CTvj=125°CTvj=150°C反向恢复峰值电流PeakreverserecoverycurrentIF=450A,-diF/dt=7000A/µs(Tvj=150°C)VR=600VVGE=-15VIRM450550575AAATvj=25°CTvj=125°CTvj=150°C恢复电荷RecoveredchargeIF=450A,-diF/dt=7000A/µs(Tvj=150°C)VR=600VVGE=-15VQr48,092,0105µCµCµCTvj=25°CTvj=125°CTvj=150°C反向恢复损耗（每脉冲）ReverserecoveryenergyIF=450A,-diF/dt=7000A/µs(Tvj=150°C)VR=600VVGE=-15VErec26,548,555,0mJmJmJTvj=25°CTvj=125°CTvj=150°C结－外壳热阻Thermalresistance,junctiontocase每个二极管/perdiodeRthJC0,10K/W外壳－散热器热阻Thermalresistance,casetoheatsink每个二极管/perdiodeλPaste=1W/(m·K)/λgrease=1W/(m·K)RthCH0,045K/W在开关状态下温度TemperatureunderswitchingconditionsTvjop-40150°C负温度系数热敏电阻/NTC-Thermistor特征值/CharacteristicValuesmin.typ.max.额定电阻值RatedresistanceTC=25°CR255,00kΩR100偏差DeviationofR100TC=100°C,R100=493ΩΔR/R-55%耗散功率PowerdissipationTC=25°CP2520,0mWB-值B-valueR2=R25exp[B25/50(1/T2-1/(298,15K))]B25/503375KB-值B-valueR2=R25exp[B25/80(1/T2-1/(298,15K))]B25/803411KB-值B-valueR2=R25exp[B25/100(1/T2-1/(298,15K))]B25/1003433K根据应用手册标定Specificationaccordingtothevalidapplicationnote.4技术信息/TechnicalInformationFF450R12ME4IGBT-模块IGBT-modulespreparedby:CUapprovedby:MKdateofpublication:2013-11-04revision:3.1模块/Module绝缘测试电压IsolationtestvoltageRMS,f=50Hz,t=1minVISOL2,5kV模块基板材料MaterialofmodulebaseplateCu内部绝缘Internalisolation基本绝缘(class1,IEC61140)basicinsulation(class1,IEC