二极管模型

ThePhysicsofThePhysicsofSemiconductorDevicesSemiconductorDevicesMicroelectronicsInstitute,MicroelectronicsInstitute,XidianXidianUniversityUniversity(1)(2)(3)(4)(5)(6)(1)VAID=IS[exp(qVA/kt)-1]IS(Saturationcurrent)1exp(qVA/Nkt),ID=IS[exp(qVA/Nkt)-1]N(Emissioncoefficient)(2)1RS(Parasiticresistance)(3)(VAFC*VJ)CDCj0(1-VA/VJ)-M3Cj0(Zero-biasp-ncapacitance),VJ(p-npotential)M(p-ngradingcoefficient)(VAFC*VJ)CD=Cj0(1-FC)-(1+M)(1-FC(1+M)+MVA/VJ).FC(Forward-biasdepletioncapacitancecoefficient)(4)CTTT(dIfwd/dVA)TT*Gd.TT(Transittime)(5)exp(qVA/NkT)exp(qVA/2NkT)ID=IS[exp(qVA/Nkt)-1]/[1+(IS/IKF)exp(qVA/2NkT)]IKF(High-injection“knee”current)IKFISexp(qVA/NkT-1)ID=IS[exp(qVA/NkT)-1]IKFISexp(qVA/NkT-1)ID=IS[exp(qVA/2NkT)-1](6)ID()=ISR[exp(qVA/NRkT)-1]2:ISR(Recombinationcurrentparameter);NR(EmissioncoefficientforISR)(7)IDBV=IBV[exp(-q(VA+BV)/NBVkt)-1]“”BV(Reversebreakdown“knee”voltage)“”IBV(Reversebreakdown“knee”current)(8)PSpice;(:ISISRRSVJCJ0“”IKFBV)29