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PhilipsSemiconductorsProductspecificationP-channelenhancementmodeBSH205MOStransistorFEATURESSYMBOLQUICKREFERENCEDATA•VerylowthresholdvoltageVDS=-12V•Fastswitching•LogiclevelcompatibleID=-0.75A•SubminiaturesurfacemountpackageRDS(ON)≤0.5Ω(VGS=-2.5V)VGS(TO)≥0.4VGENERALDESCRIPTIONPINNINGSOT23P-channel,enhancementmode,PINDESCRIPTIONlogiclevel,field-effectpowertransistor.Thisdevicehaslow1gatethresholdvoltageandextremelyfastswitchingmakingitidealfor2sourcebatterypoweredapplicationsandhighspeeddigitalinterfacing.3drainTheBSH205issuppliedintheSOT23subminiaturesurfacemountingpackage.LIMITINGVALUESLimitingvaluesinaccordancewiththeAbsoluteMaximumSystem(IEC134)SYMBOLPARAMETERCONDITIONSMIN.MAX.UNITVDSDrain-sourcevoltage--12VVDGRDrain-gatevoltageRGS=20kΩ--12VVGSGate-sourcevoltage-±8VIDDraincurrent(DC)Ta=25˚C--0.75ATa=100˚C--0.47AIDMDraincurrent(pulsepeakvalue)Ta=25˚C--3APtotTotalpowerdissipationTa=25˚C-0.417WTa=100˚C-0.17WTstg,TjStorage&operatingtemperature-55150˚CTHERMALRESISTANCESSYMBOLPARAMETERCONDITIONSTYP.MAX.UNITRthj-aThermalresistancejunctiontoFR4board,minimum300-K/Wambientfootprintdgs123TopviewAugust19981Rev1.000PhilipsSemiconductorsProductspecificationP-channelenhancementmodeBSH205MOStransistorELECTRICALCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITV(BR)DSSDrain-sourcebreakdownVGS=0V;ID=-10μA-12--VvoltageVGS(TO)GatethresholdvoltageVDS=VGS;ID=-1mA-0.4-0.68-VTj=150˚C-0.1--VRDS(ON)Drain-sourceon-stateVGS=-4.5V;ID=-430mA-0.180.4ΩresistanceVGS=-2.5V;ID=-430mA-0.320.5ΩVGS=-1.8V;ID=-210mA-0.420.6ΩVGS=-2.5V;ID=-430mA;Tj=150˚C-0.480.75ΩgfsForwardtransconductanceVDS=-9.6V;ID=-430mA0.51.6-SIGSSGatesourceleakagecurrentVGS=±8V;VDS=0V-±10±100nAIDSSZerogatevoltagedrainVDS=-9.6V;VGS=0V;--50-100nAcurrentTj=150˚C--11-100μAQg(tot)TotalgatechargeID=-0.5A;VDD=-10V;VGS=-4.5V-3.8-nCQgsGate-sourcecharge-0.4-nCQgdGate-drain(Miller)charge-1.0-nCtdonTurn-ondelaytimeVDD=-10V;ID=-0.5A;-2-nstrTurn-onrisetimeVGS=-8V;RG=6Ω-4.5-nstdoffTurn-offdelaytimeResistiveload-45-nstfTurn-offfalltime-20-nsCissInputcapacitanceVGS=0V;VDS=-9.6V;f=1MHz-200-pFCossOutputcapacitance-95-pFCrssFeedbackcapacitance-41-pFREVERSEDIODELIMITINGVALUESANDCHARACTERISTICSTj=25˚CunlessotherwisespecifiedSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNITIDRContinuousreversedrainTa=25˚C---0.75AcurrentIDRMPulsedreversedraincurrent---3AVSDDiodeforwardvoltageIF=-0.38A;VGS=0V--0.72-1.3VtrrReverserecoverytimeIF=-0.5A;-dIF/dt=100A/μs;-75-nsQrrReverserecoverychargeVGS=0V;VR=-9.6V-69-nCAugust19982Rev1.000PhilipsSemiconductorsProductspecificationP-channelenhancementmodeBSH205MOStransistorFig.1.Normalisedpowerdissipation.PD%=100⋅PD/PD25˚C=f(Ta)Fig.2.Normalisedcontinuousdraincurrent.ID%=100⋅ID/ID25˚C=f(Ta);conditions:VGS≤-10VFig.3.Safeoperatingarea.Ta=25˚CID&IDM=f(VDS);IDMsinglepulse;parametertpFig.4.Transientthermalimpedance.Zthj-a=f(t);parameterD=tp/TFig.5.Typicaloutputcharacteristics,Tj=25˚C.ID=f(VDS);parameterVGSFig.6.Typicalon-stateresistance,Tj=25˚C.RDS(ON)=f(ID);parameterVGSNormalisedPowerDissipation,PD(%)0204060801001200255075100125150AmbientTemperature,Ta(C)BSH1050.111010010001E-061E-051E-041E-031E-021E-011E+001E+01Pulsewidth,tp(s)PeakPulsedDrainCurrent,IDM(A)singlepulseD=0.50.20.10.050.02tpD=tp/TDPTNormalisedDrainCurrent,ID(%)0204060801001200255075100125150AmbientTemperature,Ta(C)BSH205-1.4-1.2-1-0.8-0.6-0.4-0.20-2-1.5-1-0.50Drain-SourceVoltage,VDS(V)Draincurrent,ID(A)-0.9V-1.1V4.5V-1.8V-1VTj=25C-1.2V-1.3VVGS=-1.4V-2.5VBSH2050.010.11101000.1110100Drain-SourceVoltage,VDS(V)PeakPulsedDrainCurrent,IDM(A)d.c.100ms10msRDS(on)=VDS/IDtp=100us1msBSH20500.20.40.60.811.21.41.61.822.22.42.62.83-1.4-1.2-1-0.8-0.6-0.4-0.20DrainCurrent,ID(A)Drain-SourceOnResistance,RDS(on)(Ohms)VGS=-4.5V-1.2V-1VTj=25C-1.4V-1.1V-0.9V-2.5V-1.3V-1.8VAugust19983Rev1.000PhilipsSemiconductorsProductspecificationP-channelenhancementmodeBSH205MOStransistorFig.7.Typicaltransfercharacteristics.ID=f(VGS)Fig.8.Typicaltransconductance,Tj=25˚C.gfs=f(ID)Fig.9.Normaliseddrain-sourceon-stateresistance.RDS(ON)/RDS(ON)25˚C=f(Tj)Fig.10.Gatethresholdvoltage.VGS(TO)=f(Tj);conditions:ID=1mA;VDS=VGSFig.11.Sub-thresholddraincurrent.ID=f(VGS);conditions:Tj=25˚CFig.12.Typicalcapacitances,Ciss,Coss,Crss.C=f(VDS);conditions:VGS=0V;f=1MHzBSH205-3-2.5-2-1.5-1-0.50-3-2.5-2-1.5-1-0.50Gate-SourceVoltage,VGS(V)VDSIDXRDS(on)Tj=25C150CDrainCurrent,ID(A)ThresholdVoltage,VGS(to),(V)00.10.20.30.40.50.60.70255075100125150JunctionTemperature,Tj(C)minimumtypicalBSH20500.511.522.533.5-2.6-2.4-2.2-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20DrainCurrent,ID(A)Transconductance,gfs(S)Tj=25C150CVDSIDXRDS(on)BSH2051E-071E-061E-051E-041E-031E-021E-01-1-0.9-0.8-0.7-0.6-0.5-0.4-0.3-0.2-0.10Gate-SourceVoltage,VGS(V)DrainCurrent,ID(A)VDS=-5VTj=25CNormalisedDrain-SourceOnResistance0.50.60.70.80.911.11.21.31.41.51.61.71.81.920255075100125150JunctionTemperature,Tj(C)VGS=-4.5V-1.8VRDS(ON)@TjRDS(ON)@25C-2.5VBSH205101001000-0.1-1.0-10.0-100.0Drain-SourceVoltage,VDS(V)Capacitances,Ciss,Coss,Crss(pF)CissCossCrssAugust19984Rev1.000PhilipsSemiconduc