IPW60R045CS中文资料

IPW60R045CSCoolMOSTMPowerTransistorFeatures•WorldwidebestRds,oninTO247•Ultralowgatecharge•Extremedv/dtrated•Highpeakcurrentcapability•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliantCSCoolMOSisspeciallydesignedfor:•HardswitchingSMPStopologies•Zero-voltageswitchingSMPStopologies•CCMPFCMaximumratings,atTj=25°C,unlessotherwisespecifiedParameterSymbolConditionsUnitContinuousdraincurrentIDTC=25°CATC=100°CPulseddraincurrent2)ID,pulseTC=25°CAvalancheenergy,singlepulseEASID=11A,VDD=50V1950mJAvalancheenergy,repetitivetAR2),3)EARID=11A,VDD=50VAvalanchecurrent,repetitivetAR2),3)IARAMOSFETdv/dtruggednessdv/dtVDS=0...480VV/nsGatesourcevoltageVGSstaticVAC(f1Hz)PowerdissipationPtotTC=25°CWOperatingandstoragetemperatureTj,Tstg°CMountingtorqueM3andM3.5screws60NcmValue6038230±30431-55...15031150±20VDS600VRDS(on),max0.045ΩQg,typ150nCProductSummaryTypePackageOrderingCodeMarkingIPW60R045CSPG-TO247-3Q67045A50616R045PG-TO247-3Rev.1.1page12005-03-10IPW60R045CSMaximumratings,atTj=25°C,unlessotherwisespecifiedParameterSymbolConditionsUnitContinuousdiodeforwardcurrentISADiodepulsecurrentIS,pulse180ParameterSymbolConditionsUnitmin.typ.max.ThermalcharacteristicsThermalresistance,junction-caseRthJC--0.29K/WRthJAleaded--62Solderingtemperature,wavesolderingTsold1.6mm(0.063in.)fromcasefor10s--260°CElectricalcharacteristics,atTj=25°C,unlessotherwisespecifiedStaticcharacteristicsDrain-sourcebreakdownvoltageV(BR)DSSVGS=0V,ID=250µA600--VGatethresholdvoltageVGS(th)VDS=VGS,ID=3mA2.133.9ZerogatevoltagedraincurrentIDSSVDS=600V,VGS=0V,Tj=25°C--25µAVDS=600V,VGS=0V,Tj=150°C-tbd-Gate-sourceleakagecurrentIGSSVGS=20V,VDS=0V--100nADrain-sourceon-stateresistanceRDS(on)VGS=10V,ID=44A,Tj=25°C-0.040.045ΩVGS=10V,ID=44A,Tj=150°C-0.11-GateresistanceRGf=1MHz,opendrain-1.3-ΩValuesThermalresistance,junction-ambientValueTC=25°C44Rev.1.1page22005-03-10IPW60R045CSParameterSymbolConditionsUnitmin.typ.max.DynamiccharacteristicsInputcapacitanceCiss-6800-pFOutputcapacitanceCoss-320-Effectiveoutputcapacitance,energyrelated4)Co(er)-310-Effectiveoutputcapacitance,timerelated5)Co(tr)-820-Turn-ondelaytimetd(on)-30-nsRisetimetr-20-Turn-offdelaytimetd(off)-100-Falltimetf-10-GateChargeCharacteristicsGatetosourcechargeQgs-34-nCGatetodrainchargeQgd-51-GatechargetotalQg-150190GateplateauvoltageVplateau-5.0-VReverseDiodeDiodeforwardvoltageVSDVGS=0V,IF=44A,Tj=25°C-0.91.2VReverserecoverytimetrr-600-nsReverserecoverychargeQrr-17-µCPeakreverserecoverycurrentIrrm-60-AValuesVGS=0V,VDS=100V,f=1MHzVDD=400V,VGS=10V,ID=44A,RG=3.3ΩVDD=400V,ID=44A,VGS=0to10VVGS=0V,VDS=0Vto480V3)RepetitiveavalanchecausesadditionalpowerlossesthatcanbecalculatedasPAV=EAR*f.VR=400V,IF=IS,diF/dt=100A/µs4)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%VDSS.5)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%VDSS.1)J-STD20andJESD222)PulsewidthtplimitedbyTj,maxRev.1.1page32005-03-10IPW60R045CS1Powerdissipation2SafeoperatingareaPtot=f(TC)ID=f(VDS);TC=25°C;D=0parameter:tp3Max.transientthermalimpedance4Typ.outputcharacteristicsID=f(VDS);Tj=25°CID=f(VDS);Tj=25°Cparameter:D=tp/Tparameter:VGS010020030040050004080120160TC[°C]Ptot[W]1µs10µs100µs1ms10msDC103102101100103102101100VDS[V]ID[A]singlepulse0.010.020.050.10.20.510010-110-210-310-410-510-610010-110-210-3tp[s]ZthJC[K/W]4.5V5V5.5V6V7V8V10V20V05010015020025005101520VDS[V]ID[A]limitedbyon-stateresistanceRev.1.1page42005-03-10IPW60R045CS5Typ.outputcharacteristics6Typ.drain-sourceon-stateresistanceID=f(VDS);Tj=150°CRDS(on)=f(ID);Tj=150°Cparameter:VGSparameter:VGS7Drain-sourceon-stateresistance8Typ.transfercharacteristicsRDS(on)=f(Tj);ID=44A;VGS=10VID=f(VGS);|VDS|2|ID|RDS(on)maxparameter:Tjtyp98%00.020.040.060.080.10.12-60-202060100140180Tj[°C]RDS(on)[Ω]25°C150°C040801201602002402803200246810VGS[V]ID[A]4.5V5V5.5V6V7V8V10V20V02040608010012014005101520VDS[V]ID[A]5V5.5V6V6.5V7V20V00.040.080.120.16020406080100ID[A]RDS(on)[Ω]Rev.1.1page52005-03-10IPW60R045CS9Typ.gatecharge10ForwardcharacteristicsofreversediodeVGS=f(Qgate);ID=44ApulsedIF=f(VSD)parameter:VDDparameter:Tj11Avalancheenergy12Drain-sourcebreakdownvoltageEAS=f(Tj);ID=11A;VDD=50VVBR(DSS)=f(Tj);ID=0.25mA25°C150°C25°C,98%150°C,98%10310210110000.511.52VSD[V]IF[A]120V400V024681012050100150Qgate[nC]VGS[V]540580620660700-60-202060100140180Tj[°C]VBR(DSS)[V]05001000150020002060100140180Tj[°C]EAS[mJ]Rev.1.1page62005-03-10IPW60R045CS13Typ.capacitances14Typ.CossstoredenergyC=f(VDS);VGS=0V;f=1MHzEoss=f(VDS)010203040500100200300400500600VDS[V]Eoss[µJ]CissCossCrss105104103102101100050100150200VDS[V]C[pF]Rev.1.1page72005-03-10IPW60R045CSDefinitionofdiodeswitchingcharacteristicsPG-TO247-3:OutlineDimensionsinmmRev.1.1page82005-03-10IPW60R045CSPublishedbyInfineonTechnologiesAGBereichKommunikationSt.-Martin-Straße53D-81541München©InfineonTechnologiesAG1999AllRightsReserved.Attentionplease!Theinformationhereinisgiventodescribecertaincomponentsandshallnotbeconsideredaswarrantedcharacteristics.Termsofdeliveryandrightstotechnicalchangereser