上海交通大学硕士学位论文

310k20kHz100k300kHz10k20kHzIGBTIPM-IGBTPWMSG3524100k300kHzIRMOSFETIRMOSFETPWMATmega16MOSFET45RESEARCHOFHIGHANDMIDDLEFREQUENCYVARIABLE-FREQUENCYPOWERSUPPLYAPPLIEDINENVIRONMENTPROTECTIONABSTRACTTodaypowersupplyisanimportantindustryandbasicsciencetechnologytoothersubjects.Fromdailylifetofrontedgescience,nothingcandevelopwithoutthesupportandparticipationofpowersupply.Andthefrequencytobehigheristhemaindevelopingdirection.Inthepaper,theconvertercircuitdesignandpartchoosingaremainlydiscussed.Themiddlefrequencyvariablerangeisfrom10kto20kHz,andthehigherfrom100kto300kHz.Thepaperalsointroducedtherectifiercircuit.Andintwoexperiments,differentmethodswereused.Singlephaseuncontrollablerectifierwasusedinmiddlefrequencycircuit,whilethreephasefullycontrollablerectifierwasusedinhighfrequencycircuit.Accordingtodifferentfrequencyvariablerange,inthe10kto20kHzconvertercircuit,IPM-IGBTandSG3524wereapplied.IPM-IGBTmeansintelligentpowermodule,whichintegratedtheprotectionfunction.SG3524wasusedtogeneratethePWMsignal.Thecharacterofthecircuitismodularizedandsimplified.Besides,inthe100kto300kHzconvertercircuit,mainpartschosenweremadebyIR,includingtheMOSFETanditshalf6bridgedriver.AndthecontrolcircuitwascomposedbyATmega16.Thecharacterofthecircuitisintegratedandreasonable.Intheend,thepaperpresentedtheenvironmentalprotectionapplicationofthehigh&middlefrequencyvariablecircuit,whichindicatedtherealmeaningofthisresearch.KEYWORDS:rectifier,converter,powerdevice,environmentalprotection1200611522006115200611511.1,1.21947SCR2,,,,,,,()1.2.1,50Hz20kHz,400,5~l0%,,,,,90%,30%,,,1.2.2,,,,,(SPM),,(IPM),,,,,(),(ASPM),,3,,(ASIC),,,,,,,,,,,,,,,,,,,,,,1.2.3,,,,,:(),,,,,:(EMC)(PFC),,,,1.2.4:,,,;(),(IEC),IEC555IEC917IECl000,,:,,,420,,2l,,,,,,,,,,,,,,,,20,,,,1.3ACAC-DC-ACLC5EMC62.1SCRGTRGTO122-172-1Figure2-1NormalStructureofControllableRectifierCircuit12341282.2αθαgUααα0αmax2.392-2Figure2-2Three-phaseCompletelyControllableBridgeRectifierCircuit2.3.122Dyα02-3Figure2-3ThyristorTriggerSequenceandOutputVoltageWaveform10ωt1ωt3ωt5T1T3T5ωt2ωt4ωt6T2T4T660T1T3T5T1T2T4T6T2120ωt1ωt2abT1T6aT1T6babωt2acbUg2T2T6T6T2ωt2ωt3aT1T2cacωt3baT3T1T1T3ωt3ωt4bcT2T3ωt4ωt5baT3T4ωt5ωt6caT4T5ωt6ωt7cbT5T6ωt7ωt8abT6T161122334455661dUdUdU6300Hz0oα=22.34dUU=0oα60oα≤dU6090ooαdUdU90oα=0dU=90oαdUdU120oα=111T1T3T5T2T4T6120606012345612α6032.3.2α6π/311060ooα≤dU5622662sin2.34cos2dUUtdtUπαπαωωαπ++==∫(2-1)2U60120ooα≤180otω=T1T6T2T2T1T6T2T2T11220366sin[1cos()]23ddUUtdtUππαπωωαπ+==++∫(2-2)0dUα120oα=0dU=1202120α22.34cosdUUα=(2-3)dUα2-42-4Figure2-4RelationsbetweenOutputAverageVoltageandControlAngle090ooα0dU90180ooα0dU9022I2221222[()]2333dddIIIIπππ=+−=(2-4)132.41.13522-5dd10d1060d12010d120d102-514Figure2-5RelationsamongPulseWidth,LoadCharacterandMainCircuit310V/uS42.3.0~120o0~90o4.5.152.5SX-JKZ2-6Figure2-6Three-phaseCompletelyControllableRectifierCircuitDiagramTB-3ZSX-JKZ1605VDC1(RST)(RKP1KP4)2(A1G1A6G6)1000AA1G1KPl3380VAC50Hz,260420VAC4CONCOMCON0-5V0CON0-0.8VCON0.8V4.6V18000CON4.6V5VCON05V5CONCOM30K+5V2-10K6CON0VCON0V71789301003W0.11.0f400VAC10183.150Hz19GTRGTOMOSFETIGBT3.2IGBTIGBT3-1IGBT3-1IGBTFigure3-4Single-PhaseBridgeInvertCircuitWithResistorLoad0πT1T2π2πT3T4RRUdURi3-2IGBTRURi203-2Figure3-4VoltageandCurrentWaveformUnderResistorLoad3-13-33-3IGBTFigure3-4Single-PhaseBridgeInvertCircuitWithInductedLoad3-3ωtπT1T2T3T4T1T2D3D4T3T4T1T2D1D221iZ3-4IGBT3-4Figure3-4VoltageandCurrentWaveformWithInductedLoad2210k20kHz220V/50Hz10k20kHzIPMPS21865IGBT-IPMIPMIGBTCPUDSP4-14-1Figure4-1SystemBlockDiagram,IPMIPMPWMSG3524IPM234.1IGBTIGBTInsulatedGateBipolarTransistorMOSMOSFETIGBT600V10A1kHzInductionHeating10k20kHzIGBTIGBTIPMIGBT4.1.1IGBT1.IGBTIGBTMOSFETGTR4-24-2IGBTFigure4-2SimplifiedEquivalentCircuitandElectricSymbolT1NMOSFETT2PNPGTRdrRGTRIGBTMOSFETGTR24N-IGBTNIGBTPMOSFETP-IGBTIGBT2.IGBTIGBTNIGBT()GEthUIGBTMOSFETNMOSFETIGBTNIGBTMOSFETIGBTIGBTGEUGEU()GEthUMOSFETIGBTonRMOSFETIGBT4.1.2IGBT1.IGBTCIGEUMOSFET4-2a()GEthUIGBT25oC()GEthU26V2.GEUCIGEU4-2bGTR0GEUIGBT254-2IGBTFigure4-2TransferandOutputCharacter3.IGBTIGBT4-34-3IGBTFigure4-3OpenandCloseProcess1IGBTIGBTMOSFETIGBTMOSFET26()dontGEU10%CI0.1CMIrtCI0.1CMI0.9CMIont2IGBT()dofftGEU90%CI0.9CMIftCI0.9CMI0.1CMIofftIGBTPNPIGBTMOSFETIGBT4.IGBTCESUPNPCICI1msCPICMPIGBT1000VGTR1/10MOSFETGTRVDMOSFETMOSFETIGBTMOSFETGTR5.IGBTIGBTNPNCMI27PNPIGBTd/dCEUtIGBTCMIIGBTd/dCEUtIGBTFBSOA4-4aIGBTPNPDC4-4aDCIGBTRBSOAd/dCEUt4-4bIGBTd/dCEUtd/dCEUtIGBT4-4IGBTFigure4-4SafeOperatingAreaIGBTIGBT28IGBTIGBTIGBT4.1.3IGBTIGBTIGBTIGBTIGBT1.CEUmaxdU1232CESUUKKK=(4-1)2SU1K11.5K≈2K21.2K≈3K31.3~1.5K≈IGBT1K2K3K220VCEU600V380VCEU1000VIGBT2.IGBTMP29452cos3MCPIKKUϕ=(4-2)cosϕU4K42K=5K51.2K=4.2IPM4.2.1IPMIPM,,IPMIPMPS21865600V20A520kHzIGBT,PS218654-51UPU2VP1U3VUFBU4VUFSU5VPV6VP1V307VVFBV8VVFSV9WPW10VP1W11VPCW12VWFBW13VWFSW14VN115VNC16CIN17CFO18FO19UNU20VNV21WNW22P23UU24VV25WW26N314-5PS21865Figure4-5InnerBlockDiagram4.2.2,PS218656IGBT4VW(FO)()SG352432SG3524PS218654-64-6PS21865Figure4-6PeripheralCircuitDesignofPS21865shuntRsfRsfCPS218654.3SG3524PWMSiliconGeneralPWMSG3524SG35244-7334-7SG35234Figure4-7Inner