光敏二极管芯片制作流程

C&I★3N2BAUK-DFAB部工程技术C&I★3N2BAUK-DFAB部工程技术OPTO产品指的是车间生产的光敏二极管和光敏三极管，从命名上可以看出这种产品对光是非常敏感的，产品结构及制造工艺与普通的晶体管也有一定的区别，故电特性也是有其独特的地方。•光敏二极管：英文为PHOTODIODE，简称为PDI，它是在反向电压作用下工作的,没有光照时,反向电流极其微弱,叫暗电流;有光照时,反向电流迅速增大到几十微安,称为光电流.光的强度越大,反向电流也越大.光的变化引起光电二极管电流变化,这就可以把光信号转换成电信号,成为光电传感器件。•光敏三极管：英文为PHOTOTRANSISTOR，简称为PTR，它和普通三极管相似，也有电流放大作用，只是它的集电极电流不只是受基极电路和电流控制，同时也受光辐射的控制。C&I★3N2BAUK-DFAB部工程技术PROCESS명PDP01(PBF)STEPAUK-DCONDITION장비/RECIPESPEC.1'STOXIDATION(R)1050℃3'(O2)+70'(STEM)+1'(O2)18TUBE/#109TOX=5800~6800ÅP+PEPTIME:480(BOE7:1)PLAPBFCOATING3M-31CP표면COATINGPBFCOATER/#09T=3800~4200ÅP+DIFFUSION(R)1000℃78'(N2/LO2=3/0.15)23TUBE/#720RS=15~21Ω/□LTO770℃15'(N2/WO2=0.5/3)24TUBE/#123P+DRIVE1020℃22TUBE/#753TOX=3400~4400Å5'(N2/O2)+35'(N2/WO2/HCL)+27'(N2/O2)RS=34~50Ω/□N+PEPWETEtchTIME:660(BOE7:1)PLAN+DIFFUSION950℃15'(N2/O2)+13'35(POCl3)+5'N2/O2)A-1/14TUBE/#216RS=8~23Ω/□N+DRIVE900℃15'(N2/O2)+70'(ST)+5'N2/O2)13TUBE/#348TOX=4500~5500ÅRS=10~25Ω/□SINPEPTIME:480(BOE7:1)PLAPECVDOXFORD/#06TSIN=1300~1500ÅCNTPEPWETEtchTIME:480(BOE7:1)PLAMETALPUREALSPUTTER/#1Al=20000ÅMETALPEPALWETETCHPLASINTER450℃,25min,N216TUBE/#643BACKMETALBHF:CH3C00H=2:110초DIPT=1500±150ÅTemp.=250℃,진공도=1.3×10-4PaVES-2550/#01TCr=500±50ÅTAu=1000±100ÅC&I★3N2BAUK-DFAB部工程技术PROCESS명PDP05STEPAUK-DCONDITION장비/RECIPESPEC.1'STOXIDATION(R)1050℃5'(O2)+140'(STEM)+30'(O2)*Recipe확인18TUBE/#105TOX=7200~8800ÅP+PEPWETEtchTIME:720(BOE7:1)MPAPBFCOATING3M-31CP표면COATINGPBFCOATER/#09T=3800~4200ÅP+DIFFUSION(R)1000℃78'(N2/LO2=3/0.15)23TUBE/#720RS=15~21Ω/□LTO770℃15'(N2/WO2=0.5/3)24TUBE/#123P+DRIVE1020℃22TUBE/#769TOX=~1000Å5'(N2/O2)+70'(N2/O2)+5'(N2/O2)(Recipe확인)RS=22~33Ω/□DEWETWETEtchTIME:70(BOE7:1)WETPECVDSIN두께=1100ÅTarget중심치(출하조건감안두께설정)OXFORD/#____TSIN=1000~1150ÅCNTPEPWETEtchTIME:420(BOE7:1)MPAMETALPUREAL,전처리조건15:1HF=10SPUTTER/#1Al=20000ÅMETALPEPALWETETCHMPASINTER450℃,30min,N216TUBE/#645M/P*Manual측정_Manual측정Sheet에기록CurveTracer규격참조BACKMETALBHF:CH3C00H=2:110초DIPT=1500±150ÅTemp.=250℃,진공도=1.3×10-4PaVES-2550/#01TCr=500±50ÅTAu=1000±100ÅEDS전수TEST_ProbeCardAUTOTESTERPGM규격참조C&I★3N2BAUK-DFAB部工程技术1’STOXIDEOXIDEP+ETCHOXIDEP+PHOTOOXIDEPRP+DIFFOXIDEP+N+ETCHOXIDEP+N+PHOTOOXIDEPRP+N+DIFFOXIDEP+N+SINETCHOXIDEP+N+SINPHOTOOXIDEPRP+N+CNTETCHP+N+SINCNTPHOTOPRP+N+SINPECVDP+N+SINAlETCHP+N+SINAlAlDEPOP+N+SINAlB/MP+N+SINAlCr/AUPRAlSINP+N+AlPHOTOC&I★3N2BAUK-DFAB部工程技术DEVICE原资材PROCESSMASK曝光方式CHIPSIZECHIP数特性NAMETHICKRESISTIVITYVF(↓)ID(↓)BVR(↑)SD-202SWP-502400±152000~8000PDP50DS3-20MPA,PLA2.0mm×2.0mm27591.31070DP2-16SWP-502400±153000~8000PDP50DP2-16MPA,PLA1.6mm×1.6mm43411.51065DS3-23SWN-503400±152000~8000PDP01DS3-23PLA2.3mm×2.3mm20471.31080DS3-25SWN-503400±151000~4000PDP01DS3-25PLA2.5mm×2.5mm17291.31080DS3-16SWN-503400±151000~4000PDP01DS3-16PLA1.6mm×1.6mm43411.31080DS3-30SWN-503400±151000~4000PDP01DD3-30PLA3.0mm×3.0mm11931.31065DS3-20SWN-503400±151000~4000PDP01DS3-20PLA2.0mm×2.0mm27591.31080DS0-30SWN-500400±15250~350PDP01DS0-30PLA3.0mm×3.0mm11931.31080DD3-30DWN-503560±101200~4000PDP01DD3-30PLA3.0mm×3.0mm11931.31080SD-208SWP-504300±152000~8000PDP50SD-208PLA1.4mm×1.4mm58201.51065SD-201ASWP-502400±152000~8000PDP50SD-201AMPA,PLA1.6mm×1.6mm43981.31020NPD-01SWN-503400±151000~4000PDP01NPD-01PLA2.1mm×2.1mm24591.31040PN-6IHPADWN-503560±101200~4000PDP05PN-6IHPAMPA5.6mm×5.3mm3381.3SD-212SWP-502400±152000~8000PDP50SD-212MPA1.83mm×1.83mm32161.51065SD-219SWP-502400±152000~8000PDP50SD-1109MPA1.09mm×1.09mm91080.5~1.31035SD-119SWN-503400±151000~4000PDP01SD-1109MPA1.09mm×1.09mm91080.5~1.31035DS3-27SWN-503400±151000~4000PDP01DS3-27MPA2.7mm×2.7mm15301.3580KBS-N26-2SWN-503400±151000~4000PDP04-AKBS-N26MPA1.08mm×2.67mm35641.35040PD-2222DDWN-503560±101200~4000PDP05PD-2222MPA2.2mm×2.2mm22001.35040PD-4545DDWN-503560±101200~4000PDP05PD-4545MPA4.5mm×4.5mm5191.31040C&I★3N2BAUK-DFAB部工程技术C&I★3N2BAUK-DFAB部工程技术10V条件，无光照10V条件，自然光照C&I★3N2BAUK-DFAB部工程技术C&I★3N2BAUK-DFAB部工程技术5V时突然关门慢慢将门关闭C&I★3N2BAUK-DFAB部工程技术PHOTOTRANSISTORPROCESSTD1-06STEPCONDITION장비/RECIPESPEC.1'STOXIDATION(R)1050℃5'(O2)+85'(WO2)+30'(O2)18TOX=5800~6800ÅBASEPEPWETETCHMPAPBFCOATING3M-31CP(표면COATING)/9T=3700~4300ÅBASEDIFFUSION(R)950℃25'(N2/LO2=3/0.15)23RS=39~47Ω/□LTO770℃15'(N2/WO2=0.5/3)24BASEDRIVE1130℃10'(N2/O2)+95'(N2/WO2/HCL)+25'(N2/O2)22TOX=7900~9900ÅRS=110~150Ω/□EMITTERPEPWETETCHMPAEMTDEPOSITION1050℃5'(N2/O2)+50'(N2/O2/POCl3)+20'(N2/O2)14RS=2.25~3.75Ω/□EMTDRIVE900℃50'(N2/WO2/HCl)+10'(N2/O2)13TOX=4100~5100ÅRS=2.25~3.75Ω/□SINPEPWETETCHMPASINDEPOASMTsin=1800~2200Å굴절율=1.9~2.1CONTACTPEPWETETCHMPAMETALAl(2㎛)SPUTTER/VES2550TAl=1.8~2.2㎛METALPEPWETETCHMPASINTER450℃,25min,N216BACKMETALTemp.=250℃,진공도=1.3×10-4PaT=1500±150ÅEBX-2000CTCr=500±50Å/#2,3TAu=1000±100ÅC&I★3N2BAUK-DFAB部工程技术SiO21’STOXIDEPRPRSiO2P+PHOTOSiO2SiO2P+ETCHPBFSiO2SiO2PBFCOATP+SiO2P+DIFFPRP+SiO2N+PHOTOP+SiO2N+ETCHP+SiO2N+N+DIFFP+SiO2N+PRSINPHOTOP+SiO2N+SINETCHP+SiO2N+SiNPECVDP+SiO2N+SiNPRCNTPHOTOP+SiO2N+SiNCNTETCHSiNP+SiO2N+ALAlDEPOSiNP+SiO2N+ALPRPRAlPHOTOSiNP+SiO2N+ALALAlETCHC&I★3N2BAUK-DFAB部工程技术项目VECOVCBOVEBOVCEOVCESHFE测试条件@50uA@50uA@50uA@500uA@5mA/1mA@10V/1mASPEC6.7/7.2V↑90/93V↑6.5/6.7V↑50/63V↑300mV↓340~1500RANKBSCSDSES范围340~440440~640640~940