搜索
附件7：南昌大学本科生毕业设计（论文）书写式样一、页面设置：上2.54cm,下2.54cm,左3.67cm,右2.67cm,页眉1.5cm,页脚1.75cm，行间距1.35倍。二、目录：“目录”两字小三号宋体加粗，目录内容小四号宋体，页码数字对齐。三、页眉和页码：页眉和页码从中文摘要开始，页眉为相应内容的标题，页码从中文摘要、Abstract、目录用罗马数字(I，II，III……)编排，从正文第一章开始按照阿拉伯数字（1，2，3……）编排。四、摘要1．中文摘要：标题小二号宋体加粗，“专业、学号、姓名、指导教师”五号宋体，“摘要”两字四号宋体，摘要内容小四号宋体，“关键词”三字小四号宋体加粗，2．英文摘要：标题小二号TimesNewRoman体加粗，“Abstract”四号TimesNewRoman体；“Abstract”内容小四号TimesNewRoman体，“Keyword”小四号TimesNewRoman体加粗。五、正文：标题四号宋体，正文内容小四号宋体。六、图表：图表内容五号宋体。七、参考文献：“参考文献”四字四号宋体，参考文献内容小四号宋体，其中英文用小四号TimesNewRoman体。八、致谢：“致谢”两字四号宋体，致谢内容小四号宋体。具体书写式样如下：密级：NANCHANGUNIVERSITY学士学位论文THESISOFBACHELOR（20—20年）题目学院：系专业班级：学生姓名：学号：指导教师：职称：起讫日期：校名外文（大写）TimesNewRoman，四号，居中宋体，30磅，居中TimesNewRoman，四号，居中中文：宋体；数字：TimesNewRoman四号，居中校徽标识（cm）3.33×3.33，居中宋体，三号，居中宋体，四号，居中注意线条长度一致页面设置：上2.54cm,下2.54cm,左3.67cm,右2.67cm，页眉1.5cm,页脚1.75cm,1.35倍行距，应用于整篇文档宋体，四号，居右校名标识（cm）1.88×6.59，居中南昌大学学士学位论文原创性申明本人郑重申明：所呈交的论文是本人在导师的指导下独立进行研究所取得的研究成果。除了文中特别加以标注引用的内容外，本论文不包含任何其他个人或集体已经发表或撰写的成果。对本文的研究作出重要贡献的个人和集体，均已在文中以明确方式表明。本人完全意识到本申明的法律后果由本人承担。作者签名：日期：学位论文版权使用授权书本学位论文作者完全了解学校有关保留、使用学位论文的规定，同意学校保留并向国家有关部门或机构送交论文的复印件和电子版，允许论文被查阅和借阅。本人授权南昌大学可以将本论文的全部或部分内容编入有关数据库进行检索，可以采用影印、缩印或扫描等复制手段保存和汇编本学位论文。保密□，在年解密后适用本授权书。本学位论文属于不保密□。（请在以上相应方框内打“√”）作者签名：日期：导师签名：日期：此页可直接下载摘要IIII-Ⅴ族氮化物及其高亮度蓝光LED外延片的MOCVD生长和性质研究专业：学号：学生姓名：指导教师：摘要宽禁带III－Ⅴ族氮化物半导体材料在短波长高亮度发光器件、短波长激光器、光探测器以及高频和大功率电子器件等方面有着广泛的应用前景。自1994年日本日亚化学工业公司率先在国际上突破了GaN基蓝光LED外延材料生长技术以来，美、日等国十余家公司相继报导掌握了这项关键技术，并分别实现了批量或小批量生产GaN基LED。尽管如此，这项高技术仍处于高度保密状态，材料生长的关键思想及核心技术仍未公开，还无法从参考文献及专利公报中获取最重要的材料生长信息。本论文就是在这种情况下立题的，旨在研究GaN基材料生长中的物理及化学问题，为生长可商品化的高亮度GaN基LED外延材料提供科学依据。本文在自制常压MOCVD和英国进口MOCVD系统上对III－Ⅴ族氮化物的生长机理进行了研究，对材料的性能进行了表征。通过设计并优化外延片多层结构，生长的蓝光LED外延片质量达到了目前国际上商品化的中高档水平。并获得了如下有创新和有意义的研究结果：1．首次提出了采用偏离化学计量比的缓冲层在大晶格失配的衬底上生长单晶膜的思想，并在GaN外延生长上得以实现。采用这种缓冲层，显著改善了GaN外延膜的结晶性能，使GaN基蓝光LED器件整体性能大幅度提高，大大降低了GaN基蓝光LED的反向漏电流，降低了正向工作电压，提高了光输出功率。…………本文得到了国家863计划、国家自然科学基金以及教育部发光材料与器件工程研究中心项目的资助。关键词：氮化物；MOCVD；LED；卢瑟福背散射沟道；光致发光；光透射谱宋体，小二号，居中宋体，五号，对齐居中页眉：中文宋体，五号，居中标题：宋体，四号，两端对齐，1.35倍行距内容：中文宋体，外文字符TimesNewRoman，小四，两端对齐，1.35倍行距关键词：“关键词”三字加粗，关键词用“；”分隔AbstractIIStudyonMOCVDgrowthandpropertiesofIII-ⅤnitridesandhighbrightnessblueLEDwafersAbstractGaNbasedⅢ-ⅤnitrideshavepotentialapplicationsonhighbrightnessLEDs,shortwavelengthlasers,ultravioletdetectors,hightemperatureandhighpowerelectronicdevices.Studyonphysicsissuesandtechnologiesofnitridesopenanewareaof3thgenerationsemiconductor.MorethantencompaniesinAmericaandJapanreportedtohavedevelopedthenitridesgrowthtechnologysinceNichiacompanyinJapanfirstrealizedthecommercializationofGaNbasedblueLEDin1994.Inthisthesis,GaNanditsternaryweregrownbyahome-madeatmospherepressuremetalorganicchemicalvapordeposition(MOCVD)andThomasSwan6×2”MOCVDsystems.HighbrightblueLEDwaferswereobtainedbyoptimizingthenitridesgrowthtechnologyandwaferstructure.Someencouragingresultsarefollowingas:1.Wepresenttheideaofusingabufferlayerofdeviationfromstoichiometryformaterialsgrowthonlargelatticemismatchsubstrates.Thisideawasrealizedinnitridesgrowthinthisthesis.TheepilayercrystallinequalitywasimprovedandthedislocationdensitywasdecreasedbyusingGaNlowandhightemperaturebufferlayersofdeviationfromstoichiometry.TheRBS/channelingspectraexhibitedthattheminimumyieldχminofGaNlayerswasjustonly1.5%.TheleakelectriccurrentofGaNbasedLEDwasobviouslydecreasedandlowerthan1μAat5voltreversevoltagebyusingthisnewbuffertechnology.…………Thisworkwassupportedby863programinChina.Keyword:Nitrides；MOCVD；LED；Photoluminescence；RBS/channeling；Opticalabsorption页眉：外文TimesNewRoman，五号，居中TimesNewRoman，小二号，居中标题：TimesNewRoman，四号，两端对齐，1.35倍行距内容：TimesNewRoman，小四，两端对齐，1.35倍行距关键词：“Keyword”三字加粗，关键词用“；”分隔目录III目录摘要····························································································ⅠAbstract························································································Ⅱ第一章GaN基半导体材料及器件进展（多数文章为“绪论”）·················11.1III族氮化物材料及其器件的进展与应用·······································11.2III族氮化物的基本结构和性质···················································41.3掺杂和杂质特性····································································121.4氮化物材料的制备·································································131.5氮化物器件··········································································191.6GaN基材料与其它材料的比较··················································221.7本论文工作的内容与安排························································24第二章氮化物MOCVD生长系统和生长工艺······································312.1MOCVD材料生长机理····························································312.2本论文氮化物生长所用的MOCVD设备······································32…………结论···························································································136参考文献（References）··································································138致谢···························································································150宋体，小三号，居中目录内容：中文宋体，英文和数字TimesNewRoman，小四页码编号：摘要,Abstract使用页码“I,II,…”；正文开始使用页码“1,2,3,…”；小节标题左侧缩进1字符；页码数字居中对齐第一章GaN基半导体材料及器件进展-1-第一章GaN基半导体材料及器件进展1.1III族氮化物材料及其器件的进展与应用在科学技术的发展进程中，材料永远扮演着重要角色。在与现代科技