半导体CMP

yourpartnerinanalog,connectingyouwiththedigitalworldCMPIntroductionFab3CMPQiqiangyourpartnerinanalog,connectingyouwiththedigitalworldOutlineCMPbackgroundCMPprocessintroductionCMPconsumablesCMPdefectyourpartnerinanalog,connectingyouwiththedigitalworldCMPbackground•WhatisCMP?ChemicalMechanicalPlanarization(Smoothingandplaning)RotationRotationViewofCMPyourpartnerinanalog,connectingyouwiththedigitalworldCMPbackground•CMPhistoryEngineeratIBMfirstusedCMPtoimprove4LMbipolarlogicandCMOSdevicesyieldandchipperformance------------------------1985Inter-layerDielectrics(ILDorIMD)andTungstenCMPappearedatgeometriesofsub0.55umgatelength------------------------------1992ShallowTrenchIsolationCMP(STI)reduceddistanceofneighboringtransistorsforsub0.18um--------------------------------------------1999CuCMPiskeytoBEOLCumetallizationenablingdensetransistorspackingformorethan8levelsofmetalatsub0.13um-----------2001Nowlow-Koxide,DSTICMP,specialmetalCMPapplicationwereforsub90/65/45nmgatelengthproductions------------------------Nowyourpartnerinanalog,connectingyouwiththedigitalworldCMPbackground•CMPvsOtherPlanarizationTechniquesMeasurementofPlanarityTSSTRQuantitativedefinitionofplanarization:R=theRelaxationDistance,=planarizationangleθθMeasurementofPlanarityTSSTRQuantitativedefinitionofplanarization:R=theRelaxationDistance,=planarizationangleθθR=theRelaxationDistance,=planarizationangleyourpartnerinanalog,connectingyouwiththedigitalworldCMPbackground•WhyuseCMP?Stephighincrease,poorstepcoverageleavesphotoresistunexposedandinaccuratepatternreplication.DOF:DepthOfFocusyourpartnerinanalog,connectingyouwiththedigitalworldCMPbackground•Lithographypatternwillnotbeaccuratelyreplicated•Extremetopographymeansslowerdevices•UniformandPlanarsurface•HigherPerformance•ImprovedDieYieldsandDeviceReliability•Simplifiedlithographyyourpartnerinanalog,connectingyouwiththedigitalworldCMPprocessintroduction•CMPpolishingmachine•CMPApplication•PostCMPcleanyourpartnerinanalog,connectingyouwiththedigitalworldCMPpolishingmachineEBARA:EPO222structureyourpartnerinanalog,connectingyouwiththedigitalworldCMPpolishingmachineyourpartnerinanalog,connectingyouwiththedigitalworldEbaraHeadforOX/Wyourpartnerinanalog,connectingyouwiththedigitalworldCMPProcessIntegrationCMPPolisherPolishCMPCleanSystemThinfilmMeasurementConsumablesDistributionSystemOxide&MetalSlurriesPostCleanChemical&RollerPolishingPadDiamondConditionOrDresserCarrierfilmsMixingDistributionDispensingFiltrationSingleHeadEnd-pointSystemScrubberOthercleanSurfaceProfilingNon-uniformitySurfaceDefectsOtherInspectionMegasonicMulti-Headyourpartnerinanalog,connectingyouwiththedigitalworldCMPApplication•CMPBasicDefines•OxideCMPSTICMP,ILDCMP,IMDCMP,PAVCMP•WCMPyourpartnerinanalog,connectingyouwiththedigitalworldBasicCMPDefinesDishing–WplugrecessorfieldoxiderecessErosion–MetalCMPremainingoxidestepheightRemovalRate–Totalthicknessremoved/timetoremoveWIWNU–49pt.Mapofthicknessremoved.WTWNU–Differenceofremovalratefromwafer-to-wafer.WithinDie–DiechipthicknessstepheightProfile–Lineorfullscancenterandedgethicknessyourpartnerinanalog,connectingyouwiththedigitalworldA-AA-ADishing(Recess)ErosionDishingandErosionWOxideyourpartnerinanalog,connectingyouwiththedigitalworldPrestonequation:Removalrate=KpxSpeedxPressureKp(Prestoncoefficient):----Mechanicalpropertiesoftheoxide,thepolishingslurry,andthecompositionandthestructureofthepolishingpadSpeed:Head(carrier)&table(platen)speedandheadsweepPressure:Downforce-------ZonepressurecontrolandheaddesignSlurrydistribution----------ZoneslurryflowandparticlesizecontrolPadsurfaceroughness------ConditiondisksweepzonecontrolTemperaturecontrolSlurrysolidcontentcontrolRemovalRateControlyourpartnerinanalog,connectingyouwiththedigitalworldRemovalRateControlyourpartnerinanalog,connectingyouwiththedigitalworldProcessVariationinCMPyourpartnerinanalog,connectingyouwiththedigitalworldSTICMPProcessHDPNitridePADOxideLinerOxideShallowTrenchIsolationCMP•Oxideresidue(activearea)•Dishing(Vtrelated)•Uniformity•MicroscratchIssuesyourpartnerinanalog,connectingyouwiththedigitalworldILD/IMDCMPInterLayerDielectric•Globalplanarity•Lowdefectdensity•Finaloxidethicknesscontrol•FallingparticleUSG/BPSGPreCMPPostCMPIssuesInterMetalDielectricyourpartnerinanalog,connectingyouwiththedigitalworldPAVCMPPassivationCMPHDP15KTopmetal2umMetal-2USGoxide20KTopmetal2umMetal-2USGoxide20KRemaining5KoxideTotalTHK:35KCMPHDP15KTopmetal2umMetal-2USGoxide20KTopmetal2umMetal-2USGoxide20KRemaining5KoxideTotalTHK:35KCMPyourpartnerinanalog,connectingyouwiththedigitalworldTheoryofOxideCMP(1)Slurryandwaferoxidefilmformshydroxyls(2)Hydrogenbondisformedbetweentheslurryparticleandthewafer(3)Si-Obondsareformedbyreleasingawatermolecule(4)TheSi-Sibondbreakswhentheslurryparticlemoveaway(Oxideremoved)yourpartnerinanalog,connectingyouwiththedigitalworldCLCandAPCtomeettarget+/-PreCMPthicknessPolishingtimeNano9100Nano9100ReworkPost-thicknessIntarget?DoneRecipeLookupTableOxideCMPControlyourpartnerinanalog,connectingyouwiththedigitalworld