逆导型IGBT的发展及其在智能电网中的应用-李晓平

51Vol.5No.120171SmartGridJan.2017DOI10.14171/j.2095-5944.sg.2017.01.0012095-5944(2017)01-0001-08TN32AIGBT(102209)DevelopmentandApplicationofReverseConducting-IGBTinSmartGridLIXiaoping,LIUJiang,ZHAOGe,GAOMingchao,WANGYaohua,JINRui,WENJialiang(GlobalEnergyInterconnectionResearchInstitute,ChangpingDistrict,Beijing102209,China)ABSTRACT:Thispaperintroducesthestructure,principle,developmentoftechnologyanddevelopmenttrendofreverseconducting-insulatedgatebipolartransistors(RC-IGBT).Takingintoaccountofhighcurrentcapacity,lowfabricationcostandhighreliabilityoftheRC-IGBT,applicationprospectofRC-IGBTinsmartgridisanalyzed.RC-IGBThasgreateradvantageatlowswitchingfrequencies,whichisidealforMMC.FortheapplicationofhybridHVDCbreakers,RC-IGBTtechnologywillenablethebreakingcapacityofexistingpresspackagemoduletobedoubled.PowerelectronicequipmentwithRC-IGBTwillhavesimplersystemdesign,moresimplifiedheatsinkandsmallerequipmentsize.Withtherapiddevelopmentofsmartgrid,RC-IGBTwillbecomethebestchoiceforstrongsmartgridconstruction.KEYWORDS:reverseconducting-insulatedgatebipolartransistors(RC-IGBT);development;smartgrid(reverseconducting-insulatedgatebipolartransistorsRC-IGBT)IGBTRC-IGBTMMCRC-IGBTIGBTIGBT0()++(insulatedgatebipolartransistorIGBT)[1][2-3]IGBT10~100kHz30IGBTPTNPTFS(5455DW150011)ScientificandTechnologicalProjectofStateGridCorporationofChina(5455DW150011) 2IGBTVol.5No.1[3]IGBT6.5kVIGBT[4]1988[5]IGBT(fastrecoverydiodeFRD)IGBTIGBTIGBTIGBT1IGBTIGBTIGBTFRDIGBTFRDFRDIGBTIGBT1.1IGBTIGBT1[6]MOSFETPNN-/N+(N-Drift/N-Buffer)IGBTFRDIGBTP+/N+(P-Collector/N-Collector)IGBTIGBT1IGBTFig.1Schematiccross-sectionalviewofRC-IGBTN-CollectorPINIGBTIGBTFRDIGBTIGBT1IGBTFRD(Snapback)IGBT1IGBTIGBTTab.1ComparisonofconventionalIGBTandRC-IGBTIGBTIGBTFRDSnapback1.2IGBTSnapbackIGBTRC-IGBTIGBT(Snapback)RC-IGBTI-U2[7]SnapbackSnapbackSnapback[8]SnapbackSnapback2RC-IGBTI-UFig.2TypicalI-VcharacteristicsofRC-IGBT513IGBTMOSFETMOSFETMOS––N-Collector3RC-IGBTN+(P-Collector/N-Buffer)Lp(P-Collector)P-Collector/N-BufferLpP-Collector3P-CollectorN-BufferN-DriftN-Snapback3IGBTFig.3PrincipleofSnapbackeffectforRC-IGBT1.3Snapback1P-CollectorP+[9]2RC-IGBT(oxidetrenchcollectorRC-IGBTTRC-IGBT)4N-CollectorP-CollectorN-BufferP-CollectorN-BufferN-CollectorP-CollectorN-BufferN-CollectorRCSP-CollectorN-BufferRCSN-CollectorN-BufferRCSSnapbackUSBRCSSnapback4TRC-IGBTFig.4Cross-sectionofTRC-IGBT3RC-IGBT(floatingP-regionRC-IGBTFPRC-IGBT)5P(P-float)()P-floatP-floatN-Collector(N-Drift)RCS[10]5FPRC-IGBTFig.5Cross-sectionofFPRC-IGBT4IGBTVol.5No.14RC-IGBTTRC-IGBTFPRC-IGBTIGBTSnapback[11]5(bi-modeinsulatedgatetransistorBIGT)[12-13]6IGBTRC-IGBTIGBTP-CollectorSnapbackIGBTIGBTRC-IGBTBIGT6BIGTFig.6Cross-sectionofBIGT6NPNBJTRC-IGBTNPNBJTRC-IGBT7P+N+7RC-IGBTFig.7Cross-sectionofnovelRC-IGBTN-BufferN+P-PN-/P-N+P-IGBTMOSFETSnapback7RC-IGBTRC-IGBT(semi-SJRC-IGBT)8[14]NPN-DriftRN-DriftRN-PillarYmidYmidSnapback8semi-SJRC-IGBTFig.8Cross-sectionofsemi-SJRC-IGBT8RCIGBTRC-IGBT(anodegateRC-IGBTAG-RC-IGBT)9[15]2N+IGBTIGBTsnapbackIGBTp1-basep2-baseIGBT2IGBT22N+–IGBT25159AG-RC-IGBTFig.9Cross-sectionofAG-RC-IGBT2IGBT2.1IGBT2002NapoliIGBTIGBTPT10[16]2004TakahashiIGBTN+IGBT(RC-IGBT)[17]InfineonABBRC-IGBTInfineon2007ISPSD600VRC-IGBT[18]TrenchFS1120081200VRC-IGBT[19]20146500VIGBT(reverseconducting-IGBTwithdiodecontrolRCDC)[20]ABBRahimo20083300VRC-IGBT[21]RC-IGBT2009RahimoRC-IGBTSnapbackBIGTIGBTSnapbackRC-IGBT6[13]Storasta20102012[22-23]Mitsubishi2012RC-IGBT[14]RC-IGBT2012IGBT(TRC-IGBT)FPRC-IGBTTPRC-IGBT[10-11]AG-RC-IGBT[15]10RC-IGBTFig.10Schematiccross-sectionalviewofthelateralRC-IGBT11RC-IGBTFig.11Cross-sectionofatrenchfield-stopRC-IGBT2.2IGBTIGBTSnapbackIGBTSOAABB6IGBTVol.5No.1IGBT(bi-modeinsulatedgatetransistorBIGT)BIGTIGBTRC-IGBTP(IGBTpilot-IGBT)Snapback12BIGTSPTEPSPTSnapbackEPIGBTBIGTPIGBT[24]BIGTRC-IGBTBIGTRC-IGBTBIGT6.5kV12BIGTFig.12SchematicofBIGTwaferbackside3IGBTIGBTIGBTRC-IGBTIGBTFRDIGBTFRDRC-IGBT13[25]3300VHipak4IGBT2FRDIGBT6BIGT1.5BIGT143300V133.3kVHipakFig.133.3kVHiPaksubstrates143300V[7]Fig.14Currentcapacityevolutionof3300VmodulesBIGTMMCBIGTIGBTIGBTIGBT4IGBTIGBTSnapbackIGBT517IGBTBIGTBIGTRC-IGBTIGBTRC-IGBTMMCRC-IGBTIGBTIGBT[1]IGBT[J]20069(9)51-56GUOHongxiaYANGJinmingThedevelopmentofIGBT[J]ElementsApplication20069(9)51-56(inChinese)[2]IGBT[J]200324(3)1-3ZHANGGuojunWANGGangThedevelopedsituationandfeatureanalysisforIGBT[J]Microprocessors200324(3)1-3(inChinese)[3]IGBT[J]20064(5)11-15KANGBaoweiIGBTinsulatedgatebipolartransistor[J]SurveyLecture20064(5)11-15(inChinese)[4]RAHIMOMKLAKASHighvoltagesemiconductortechnologies[C]//ProceedingsoftheEPE’0913thEuropeanConferenceonPowerElectronicsandApplicationsBarcelonaSpainIEEE20091-10[5]AKIYAMAHAcollectorshoredtypeinsulatedgatebipolartransistor[C]//ProceedingsofPCIMTokyoJapanIEEE1988142-151[6]RAHIMOMSCHLAPBACHUKOPTAAetalAhighcurrent3300VmoduleemployingreverseconductingIGBTssettinganewbenchmarkinoutputpowercapability[C]//Proceedingsof200820thInternationalSymposiumonPowerSemiconductorDevicesandIC’sOrlandoUSAIEEE200868-71[7]VEMULAPATIUKAMINSKINSILBERDetalReverseconduc