IGBT基础简介-英文

IGBTGroupmembers:郭超、姜剑鸣董海玲、叶佩琼陈东海、林潇航Captain:董海玲pptmaker:郭超Informationgatherer：allofusContentBackgroundsIGBT-StructureDeviceOperationandOutputCharacteristicsNewstructuresBackgroundsInsulatedGateBipolarTransistor(IGBT)Discoveredanddevelopedintheearly1980sProvideanimprovedalternatepowerdevicetobipolarpowertransistorsModernIGBTshavethehighinputimpedanceofapowerMOSFETandthelowon-stateresistanceofabipolartransistorOneofthemostutilizedpowersemiconductorswitchesinthemarketIGBT-StructureShortcomingsofthebipolarpowertransistor:low-currentgainwhendesignedtooperateathighvoltages;poorsafeoperatingarea(SOA).Theresultingsystemsolutionobtainedwithbipolarpowertransistorsiscumbersomeindesign,difficulttomanufacture,andexpensiveforimplementationinconsumerandindustrialapplications.IGBT:Animprovedhigh-voltageswitch,useahybridsolutionwithapowerMOSFETstructureprovidingthegatedrivecurrenttoabipolarpowertransistor.TheequivalentcircuitforthishybridMOS–bipolarconfigurationisshownintherightpicture.IGBT-StructureThebasicstructureforann-channelIGBTstructureisillustratedinthefigurebelow.Thecurrent-carryingterminals:emitterandcollectorterminals.Thecontrolterminal:gateterminalTheIGBTstructureisformedbyusingfour(N–P–N–P)alternatingsemi-conductorlayers.N-P-NismadeinoperativebyincludingadeepP+diffusionandshortcircuitingtheP-baseregiontotheN+emitterregionDeviceOperationandOutputCharacteristicsTwoconditionstowork:1.positivevoltagetothecollectorterminal2.positivebiastothegateoftheIGBTTheelectroncurrentservesasthebasedrivecurrentfortheP–N–Ptransistor.HolesinjectedfromtheP+collectorandN-basejunctionJ1.Currentflowoccursfromthecollectorterminaltotheemitterterminalwithabipolarcomponentassociatedwiththewide-baseP–N–PtransistorandaunipolarcomponentviathechanneloftheMOSFETregion.DeviceOperationandOutputCharacteristicsOutputcharacteristicsoftheIGBTdevicestructuresTrade-offbetweenon-statevoltagedropandturnofftime.NewstructuresExtraction-EnhancedLateralIGBTSchematiccross-sectionofE2LIGBTwithCSinSOIwithinterfacen-diffusion-layer.Novelanodestructure,acombinationofp+-injectorandwideSchottkycontactonlightlydopedp-layerovern-bufferandCSlayerisillustrated.Reducesbothswitchingtimeandon-stateresistance.NewstructuresPartiallyNarrowMesaIGBTSchematic3DviewofaPNM-IGBTExpandingthebottomofgatetrenchessymmetricallytocreateaPartiallyNarrowMesa(PNM)structure.Theuniquegateshapelookslikeavaseandgeneratesanextremeinjectionenhancement.Reducestheon-stateresistance.NewstructuresPointInjectionPointInjectionThe“point-injection”typedevicesexhibitincreasedcathodesideconductivitymodulationExtremelyeffectiveinloweringtheon-statelosseswithoutcompromisingtheswitchingperformanceorthebreakdownrating.NewstructuresOtherstructuresmembrane-LIGBTCSTBTetc.Thankyou!