基于赛米控半桥模块的IGBT并联技术

北京维智电通科技有限公司培训资料IGBTinParallelHighPowerwithGB-modules北京维智电通科技有限公司培训资料02.07.20142750kWinverterwithIGBTinparalell北京维智电通科技有限公司培训资料02.07.20143北京维智电通科技有限公司培训资料02.07.20144Worstcase:AllcontactsshortedDifferentIGBTmoduleswithdifferentSwitchingspeedstonandtoffGatethresholdvoltagesVGE(th)GatechargecharacteristicVGE=f(QG)and„MillerCapacity“CresTransfercharacteristicIC=f(VGE)CAEGEVGEVGEVGEDuetohardconnectedgates,allIGBTsmusthavethesameVGEThismeans:allIGBTsdonotswitchindependentlyfromeachother北京维智电通科技有限公司培训资料02.07.20145HardConnectedGatewithCommonResistorVGEtt1VGE(th)VGEtVGE(th)t11t1nHardconnectedGatesAllIGBTshavedifferentgatethresholdvoltagesVGE(th)IGBT1,withthelowestVGE(th)turnsonfirst.ThegatevoltageisclampedtotheMiller-Plateau.ThereforeIGBT’swithhigherVGE(th)cannotturnon.Theyturnononlyaftert1.TheIGBT1withlowVGE(th)takesallthecurrentandswitchinglossesduringturnon.OngoingprocessbynegativethermalcoefficientofVGE(th)北京维智电通科技有限公司培训资料02.07.20146CAEGEIntroductionofGateResistorsSeparatedbygateresistorsThegatevoltageofeachIGBTcanriseindependentfromtheotherone.Note:Thegateresistorsmustbetolerated1%VGE1WithindividualgateresistorsallIGBTsareindependentfromeachotherVGE2VGEn北京维智电通科技有限公司培训资料02.07.20147IntroductionofGateResistorsVGEtt2t1VGEthSeparatedbygateresistorsAllIGBTsstillhavedifferentgatethresholdvoltagesVGE(th)But:ThegatevoltageofeachIGBTcanriseindependentlyfromtheotherones.TheMiller-Plateauwillbereachedafterashorttimet1.OnlysmalldifferencesincurrentsharingandswitchinglossesbetweenparalleledIGBTs.北京维智电通科技有限公司培训资料02.07.20148Worstcase:AllcontactsshortedTakingstrayinductancesintoregardDuetohardconnectedgatesandvaryingtransfercharacteristics,allIGBTshavedifferentswitchingtimesandspeeds;dix/dtvariesineachlegThecircuitalsohasdifferentstrayinductances;LxTherewithvx=Lxxdix/dtvariesineachleg(e.g.:1000A/µsx10nH=10V)NearlyunlimitedequalisingcurrentsiflowalsoviathethinconnectingwiresAdditionally:Oscillationsbetweenparasiticcapacitances(semiconductors)and-inductancesarenotdamped.V1V2Vni=∞CAEGE北京维智电通科技有限公司培训资料02.07.20149CirculatingcurrentandstrayinductanceHighVs北京维智电通科技有限公司培训资料02.07.201410IntroductionofAuxiliaryEmitterResistorsTheintroductionofREx(≈10%ofRGx)leadstoLimitationofequalisingcurrentsi≤10ADampingofoscillationsCAEEGV1V2Vni≤10ARE1RE2REn北京维智电通科技有限公司培训资料02.07.201411CAEEGIntroductionofAuxiliaryEmitterResistorsTheintroductionofRExleadsalsotoanegativefeedback:TheequalisingcurrentileadstoavoltagedropVRExattheEmitterresistorsRExiVRE1VRE2fastIGBTslowIGBT北京维智电通科技有限公司培训资料02.07.201412CAEEGIntroductionofAuxiliaryEmitterResistorsTheintroductionofREx(≈10%ofRGxbutmin.0,5Ω)leadstoLimitationofequalisingcurrentsi≤10ADampingofoscillationsNegativefeedbackofvoltageVRexreducesVGEoffastIGBTandIncreaseVGEofslowIGBTduringturn-on(viceversaatturn-off)V1V2Vni≤10AREx1REx2RExnfastIGBTslowIGBTVGEVGE1VGEnVGE1=VGE-VRex1VGEn=VGE+VRexn北京维智电通科技有限公司培训资料02.07.201413CirculatingcurrentandVge北京维智电通科技有限公司培训资料02.07.201414AdditionalproposalsTheintroductionofShottky-DiodesparalleltoRExhelpstobalancetheemittervoltageduringshortcircuitcase.Dimensioning≈100V,1A.北京维智电通科技有限公司培训资料02.07.201415AdditionalproposalsTheintroductionofZ-Diodespreventsovervoltagesatthegatecontacts.ThereforetheseclampingdiodesmustbeplacedveryclosetothemoduleconnectorsCAEEG北京维智电通科技有限公司培训资料02.07.201416Asymmetricalpositivefeedback北京维智电通科技有限公司培训资料02.07.201417Negativeandpossitivefeedback北京维智电通科技有限公司培训资料02.07.201418Asymmetricalnegativefeedback北京维智电通科技有限公司培训资料02.07.201419Negativeandpossitivefeedback北京维智电通科技有限公司培训资料DesignRulesforIGBTinparallelOperation北京维智电通科技有限公司培训资料02.07.201421Currentimbalance–differenceis28%betweentheIGBTs…..北京维智电通科技有限公司培训资料02.07.201422MechanicaldesignrulesDeratingX=600VIGBTs-----0.1X=1200VIGBTs---0.14X=1700VIGBTs---0.19n=numberofIGBTinparallel北京维智电通科技有限公司培训资料02.07.201423CurrentsharingDCbusconnectingimbalance北京维智电通科技有限公司培训资料02.07.201424Thisisworse!!!!!BusBarLoopInductance:2.8x7.5cm^2=21cm^2~210nHloopinductancebetweeneachIGBTandbetweenIGBTandCapandbetweeneachcapShort-circuitInductancefromDCBustoloadishighlyasymmetrical(incaseofparallelconnectedIGBTs)SITUATIONISWORSEoutput北京维智电通科技有限公司培训资料02.07.201425HowtoconsidertheDCBusDirection?北京维智电通科技有限公司培训资料02.07.201426DCBusconnectifIGBTinparallelDifficulttoconnectsnubbercapacitors北京维智电通科技有限公司培训资料02.07.201427LowInductanceDC-linkDesign北京维智电通科技有限公司培训资料02.07.201428CurrentsharingoutputImbalance北京维智电通科技有限公司培训资料02.07.201429Isthisdesignright?北京维智电通科技有限公司培训资料02.07.2014303differentstrayinductance北京维智电通科技有限公司培训资料02.07.201431TurnondelayandinfluenceofstrayinductanceOutput-loadDifferenceincurrentbetweenmodulesislimitedbystrayinductanceto:IVcc/L*t=600V/325nH*10ns=18.5A北京维智电通科技有限公司培训资料02.07.201432OutputandDCBusdesign-recommended北京维智电通科技有限公司培训资料02.07.201433IGBTinParallel–outputcurrentbalanceOutput北京维智电通科技有限公司培训资料02.07.201434ACTerminaldesignShortconnectionswithidenticalcurrentpathlengthforeachmoduleWideandthickbarsFlexibleinterconnectionsforlargesystemsmightbenecessarytocompensatedifferencesinthermalexpansion‘Longholedrillings'cancompensatemechanicaltolerancesS