半导体材料应用与研究-1

By:Wen-JenLiuDate:04/30/2001page:1Photo:Rawmaterial:Reticle,PhotoResistEquipment:I-Line(MUV),DUV,EUV(Stepper,SCANNER)Vendors:Nikon,ASML2.Moduledefinition-PHOTOThePHOTOconceptwasgeneralOpticslithographytoreproducethespecificpatterns.TodaywedeployedtheUVExcimerlaserforthelight,AccordingtoOpticsprinciple,generallythewavelengthofthelightshouldbelessthanonetenthofhalfpitch,soifthetechnologyshrink,theExposurelightsourceshouldbepushedintodeeplyUVzone.By:Wen-JenLiuDate:04/30/2001page:2Thin-Film:Rawmaterial:MetalTarget,ChemicalEquipment:Sputter,RTP,CVD(AP,PE,LP,SP,MO),ScubberVendors:AMAT,Novellus,TEL,ASM…..2.Moduledefinition-ThinFilmIngeneralwecansplittheThin-Filmintotwofield,oneisPhysicsdominated(PVD),theotherisChemicaldominated(CVD)ThePVDmeansthatnochemicalreactionassistedintheprocess,justsimplyacceleratedAratomtobombardthetargettoevaporatethetargetanddepositonthewafer,suchlikesSputter.TheCVDmeansthatthechemicalreactiononthewaferorchambertodepositafilmonthesurfaceCVDPVDChemicalreactionBy:Wen-JenLiuDate:04/30/2001page:3EtchRawmaterial:Solvent,ReactivegasEquipment:DryEtch(RIE),WetBench(ChemicalStation)Vendors:AMAT,Novellus,TEL,ASM…..2.Moduledefinition-ETCHIngeneralwecancallthatRIEinthetermofDryetching,thedryetchingwhichdominatedbythePhysicalIonbombardandchemicalreactionwiththesurfacetoevaporatedthebyproducts.ReactiveionbombardBy:Wen-JenLiuDate:04/30/2001page:4DiffusionRawmaterial:ChemicalGas,IsotopegasEquipment:Implanter,FurnaceVendors:Eaton,Varian,KE,TEL...2.Moduledefinition-DiffusionInthediffusion,there’retwomethodstodeliverthedopantintothesiliconwafer:.Implant:Toacceleratetheisotopeanddirectbombardthewafertodeliverthedopantintorightdepthwithrightconcentration..Furnace:Tousethermaldiffusionpotentialtodeliverthedopantintorightdepthwithrightconcentration.By:Wen-JenLiuDate:04/30/2001page:5CMPRawmaterial:Slurry,polishpadEquipment:CMP(W-CMP,Oxide-CMP,Cu-CMP)Vendors:AMAT,COBAT,Strasbaugh2.Moduledefinition-CMPIngeneral,theCMPlikethepolisharts,butdeployedthechemical-mechanicalassistant.There’retwofactorsdominatedtheCMPprocess:.Firstischemicalhydrolysisslurrytohydrolyzethesurface,.Secondistheslurryabrasivetoremovethehydrolytewhichunderthemechanicaldominated.By:Wen-JenLiuDate:04/30/2001page:6Notes:(1)BoxCenterrepresentsstartatPilotProductionSchedule.(2)BasedonlogicandeSRAMroadmap.(3)SIA=SemiconductorIndustryAssociationTSMC/UMC/SIATechnologyRoadMap19992000200120020.18µm0.15µmCu0.18µm0.13µmCu20032004SIA0.10µmCu0.07µmCu0.18µm0.13µmCu0.10µmCuTSMCUMCBy:Wen-JenLiuDate:04/30/2001page:7TechnologyRoadMapNote:(1)BoxCenterrepresentsPilotProductionSchedulebegins.1998199920002001eDRAM0.35µm0.25µm0.18µmLogiceSRAMMixed-Mode/RF0.15µm0.25µm0.18µmEmbeddedFlashMemory0.35µm0.25µm0.13µm0.18µmCu0.15µm0.25µm0.18µm0.13µmCu0.18µm