元器件降额标准(参考)

元器件降额准则（参考件）元器件种类降额参数降额等级ⅠⅡⅢ集成电路模拟电路放大器电源电压0.700.800.80输入电压0.600.700.70输出电流0.700.800.80功率0.700.750.80最高结温（℃）8095105比较器电源电压0.700.800.80输入电压0.700.800.80输出电流0.700.800.80功率0.700.750.80最高结温（℃）8095105电压调整器电源电压0.700.800.80输入电压0.700.800.80输出输入电压差0.700.800.85输出电流0.700.750.80功率0.700.750.80最高结温（℃）8095105模拟开关电源电压0.700.800.85输入电压0.800.850.90输出电流0.750.800.85功率0.700.750.80最高结温（℃）8095105数字电路双极型电路频率0.800.900.90输出电流0.800.900.90最高结温（℃）85100115MOS型电路电源电压0.700.800.80输出电流0.800.900.90功率0.800.800.90最高结温（℃）85100115混和集成电路厚模集成电路（W/cm2）7.5薄模集成电路（W/cm2）6.5最高结温（℃）85100115大规模集成电路最高结温（℃）改进散热方式降低结温分离半导体器件晶体管方向电压一般晶体管0.600.700.80功率MOSFET的栅源电压0.500.600.70电流0.600.700.80功率0.500.650.75功率管安全工作区集电极－发射极电压0.700.800.90集电极最大允许电流0.600.700.80最高结温Tjm（℃）200115140160175100125145≤150Tjm-65Tjm-40Tjm-20微波晶体管最高结温同晶体管二极管（基准管除外）电压（不适用于稳压管）0.600.700.80电流0.500.650.80功率0.500.650.80最高结温Tjm（℃）200115140160175100125145≤150Tjm-65Tjm-40Tjm-20微波二极管最高结温同二极管基准二极管可控硅/半导体光电器件电压0.600.700.80电流0.500.650.80最高结温Tjm（℃）200115140160175100125145≤150Tjm-65Tjm-40Tjm-20固定电阻器合成型电阻器电压0.750.750.75功率0.500.600.70环境温度按元件负荷特性曲线降额薄膜型电阻器电压0.750.750.75功率0.500.600.70环境温度按元件负荷特性曲线降额电阻网络电压0.750.750.75功率0.500.600.70环境温度按元件负荷特性曲线降额线绕电阻电压0.750.750.75功率精密型0.250.450.60功率型0.500.600.70环境温度按元件负荷特性曲线降额电位器非线绕电位器电压0.750.750.75功率合成、薄膜微调0.300.450.60精密塑料型不采用0.500.50环境温度按元件负荷特性曲线降额线绕电位器电压0.750.750.75功率普通型0.300.450.50非密封功率型－－0.70微调线绕型0.300.450.50环境温度按元件负荷特性曲线降额热敏电阻器功率0.500.500.50最高环境温度（℃）TAM-15TAM-15TAM-15电容器固定玻璃釉型直流工作电压0.500.600.70最高额定环境温度TAM（℃）TAM-10TAM-10TAM-10固定云母型直流工作电压0.500.600.70最高额定环境温度TAM（℃）TAM-10TAM-10TAM-10固定陶瓷型直流工作电压0.500.600.70最高额定环境温度TAM（℃）TAM-10TAM-10TAM-10固定纸/塑料薄膜直流工作电压0.500.600.70最高额定环境温度TAM（℃）TAM-10TAM-10TAM-10电解电容器铝电解直流工作电压－－0.75最高额定环境温度TAM（℃）－－TAM-20钽电解直流工作电压0.500.600.70最高额定环境温度TAM（℃）TAM-20TAM-20TAM-20微调电容器直流工作电压0.30~0.400.500.50最高额定环境温度TAM（℃）TAM-10TAM-10TAM-10电感元件热点温度THS（℃）(简写T)T-40~25T-25~10T-15~0工作电流0.60~0.700.60~0.700.60~0.70瞬间电压/电流0.90.90.9介质耐压0.5~0.60.5~0.60.5~0.6扼流圈工作电压0.70.70.7继电器连续触点电流小功率负荷（＜100mW）不降额电阻负载0.500.750.90电容负载（最大浪涌电流）0.500.750.90电感负载电感额定电流的0.500.750.90电阻额定电流的0.350.400.75电机负载电机额定电流的0.500.750.90电阻额定电流的0.150.200.35灯丝负载灯泡额定电流的0.500.750.90电阻额定电流的0.07~0.080.100.30触点功率（用于舌簧水银式）0.400.500.70线圈吸合电压最小维持电压0.900.900.90最小线圈电压1.101.101.10线圈释放电压最大允许值1.101.101.10最小允许值0.900.900.90最高额定环境温度TAM（℃）TAM-20TAM-20TAM-20振动极限0.600.600.60工作寿命（循环次数）0.50开关连续触点电流小功率负荷（＜100mW）不降额电阻负载0.500.750.90电容负载（电阻额定电流的）0.500.750.90电感负载电感额定电流的0.500.750.90电阻额定电流的0.350.400.75电机负载电机额定电流的0.500.750.90电阻额定电流的0.150.200.35灯丝负载灯泡额定电流的0.500.750.90电阻额定电流的0.07~0.080.100.15触点电压0.400.500.70触点功率0.400.500.70连接器工作电压0.500.700.80工作电流0.500.700.80最高接触对额定温度TM（℃）TM-40TM-20TM-15电机最高工作温度（℃）T-40T-20T-15最低极限（℃）000轴承载荷额定值0.750.900.90灯泡白炽灯工作电压（如可行）0.940.940.94氖/氩灯工作电压（如可行）0.940.940.94电路断路器电流阻性负载0.750.750.90容性负载0.750.750.90感性负载0.400.400.50电机负载0.200.200.35灯丝负载0.100.100.15最高额定环境温度TAM（℃）TAM-20保险丝电流额定值＞0.5A0.45~0.50.45~0.50.45~0.5≤0.5A0.2~0.40.2~0.40.2~0.4T＞25℃时，增加降额1/℃0.0050.0050.005晶体最低温度（℃）TL+10TL+10TL+10最高温度（℃）TU-10TU-10TU-10微波管最高额定环境温度（℃）TAM-20TAM-20TAM-20输出功率0.800.800.80反射功率0.500.500.50占空比0.750.750.75声表面波器件输入功率（f＞100MHz）降低+10dBm输入功率（f＜100MHz＝降低+20dBm纤维光学器件光纤光源峰值光输出功率0.50（适用于ILD）电流0.50（适用于ILD）结温设法降低光纤探测器PIN反向压降0.60结温设法降低光纤与光缆温度上限额定值－20；下限额定值+20张力光纤耐拉试验的0.20光缆拉伸额定值的0.50弯曲半径最小允许值的0.20核辐射按产品详细规范降额或加固导线与电缆最大应用电压最大绝缘电压规定值的0.50最大应用电流（A）线规AVG30/28/26/24/22/20/18/16单根导线电流ISV1.3/1.8/2.5/3.3/4.5/6.5/9.2/13.0线规AVG14/12/10/8/6/4单根导线电流ISV17.0/23.0/33.0/44.0/60.0/81.0双极型数字电路降额准则降额参数降额等级ⅠⅡⅢ电源电容容限±3％±5％见技术条件频率0.800.900.95输出电流0.800.900.90最高结温（C）85100115HP电压降额标准器件型号正常状态最差状态电阻峰值电压(%)功率(%)温度峰值电压(%)功率(%)温度碳膜、金属膜5050PCB的标准焊接温度85°C5080PCB的标准焊接温度100°C100Kohm1/4W1/2W505050801W40504080100Kohm1/4W805080801/2W805080801W806080802W80508060玻璃釉电阻7060压敏电阻80508080不同功率下的峰值电压：1/6W-200（150）V；1/4W-250V；1/2W-350V；1W-350V；2W-350V；3W-500V；5W-500V器件型号Isteady(%)Im(%)Isteady(%)Im(%)NTC-电阻PTC-电阻8080电容VDC(%)VCP(%)Vpeak(%)Irms(%)Ip-p(%)Temp(%)VDC(%)VCP(%)Vpeak(%)Irms(%)Ip-p(%)Temp(%)薄膜电容8585PEMPE9085MPP858585Ceramicfixed陶瓷电容75809090Electrolytic(85°C,2000h)8080856090959070Electrolytic(105°C,2000h)8080906090959070ComponentTypNormalCaseWorstCaseInductorsCoreTemp(°C)CoreTemp(%)CoreTemp(°C)CoreTemp(%)ChokeCoil80TransformerSemiconductorsTjmin.=150°CNote:TjtoTcasehastobecalculatedforverificationinanycaseDiodeVrm(%)Io(%)Ifsm(%)Tcase(°C)Vrm(%)Io(%)Ifsm(%)Tcase(°C)90507090ZenerDiodePd(%)Iz(%)IFM(%)Tcase(°C)Pd(%)Iz(%)IFM(%)Tcase(°C)50508090Damp/ModulationDiodeVrm(%)Io(%)Ifsm(%)Tcase(°C)90507090TransistorsVce(%)Veb(%)IC(%)Tcase(°CVce(%)Veb(%)IC(%)Tcase(°C85858585858590MOSFETVpss(%)Ip(%)IDM(%)VGS(%)Vpss(%)Ip(%)IDM(%)VGS(%)8580808590858085ICVpeak(%)Pd(%)Tcase(°C)Vpeak(%)Pd(%)Tcase(°C)808090858090PCB(SolderTemp)85°C100°CSpecialPartsVpeak(%)Irms(%)Tcase(°C)Vpeak(%)Irms(%)Tcase(°C)SwitchPowerMOSFET859085100DC-DCboosterMOSFETDC-DCboosterrectifierHor.-output器件型号NormalCaseWorstCaseSpecialPartsVpeak(%)Irms(%)Tcase(%)Vpeak(%)Irms(%)Tcase(%)H-Driver/Vertical行场驱动808075858080