TI芯片资料

整理文档很辛苦,赏杯茶钱您下走!

免费阅读已结束,点击下载阅读编辑剩下 ...

阅读已结束,您可以下载文档离线阅读编辑

资源描述

1目录电源类(1-10)8.CSD19535......................................189.INA210........................................1910.INA282.......................................211.TPS28225......................................27.TPS4021.......................................163.TPS54340......................................54.TPS56528......................................95.TPS7A1601.....................................126.TPS7A4001.....................................142.UCC27211......................................4高速放大器(11-17)15.LMH6552......................................3112.LMH6703......................................2517.OPA2356......................................3413.OPA2695......................................2716.OPA842.......................................3211.THS3201......................................2314.VCA821.......................................29精密ADC/DAC(18-21)18.ADS1118......................................3619.DAC7811......................................3820.DAC8571......................................4121.REF3330......................................43精密放大器(22-27)22.INA333.......................................4523.INA826.......................................4624.OPA192.......................................4825.OPA2320......................................5026.OPA2330......................................5227.OPA2376......................................53音频功放(28)28.TPA3112......................................55其他(29-33)30.SN74AUP1G07..................................5829.TLV3501......................................5733.TS12A4515....................................6231.TS5A3159.....................................6132.TS5A3166.....................................622零一.TPS282258引脚高频4A吸入电流同步MOSFET驱动器描述TheTPS28225andTPS28226arehigh-speeddriversforN-channelcomplimentarydrivenpowerMOSFETswithadaptivedead-timecontrol.Thesedriversareoptimizedforuseinvarietyofhigh-currentoneandmulti-phasedc-to-dcconverters.TheTPS28225/6isasolutionthatprovideshighlyefficient,smallsizelowEMIemmissions.Theperformanceisachievedbyupto8.8-Vgatedrivevoltage,14-nsadaptivedead-timecontrol,14-nspropagationdelaysandhigh-current2-Asourceand4-Asinkdrivecapability.The0.4-impedanceforthelowergatedriverholdsthegateofpowerMOSFETbelowitsthresholdandensuresnoshoot-throughcurrentathighdV/dtphasenodetransitions.ThebootstrapcapacitorchargedbyaninternaldiodeallowsuseofN-channelMOSFETsinhalf-bridgeconfiguration.TheTPS28225/6featuresa3-statePWMinputcompatiblewithallmulti-phasecontrollersemploying3-stateoutputfeature.Aslongastheinputstayswithin3-statewindowforthe250-nshold-offtime,thedriverswitchesbothoutputslow.Thisshutdownmodepreventsaloadfromthereversed-output-voltage.Theotherfeaturesincludeundervoltagelockout,thermalshutdownandtwo-wayenable/powergoodsignal.Systemswithout3-statefeaturedcontrollerscanuseenable/powergoodinput/outputtoholdbothoutputslowduringshuttingdown.TheTPS28225/6isofferedinaneconomicalSOIC-8andthermallyenhancedlow-sizeDualFlatNo-Lead(DFN-8)packages.Thedriverisspecifiedintheextendedtemperaturerangeof–40°Cto125°Cwiththeabsolutemaximumjunctiontemperature150°C.TheTPS28226operatesinthesamemannerastheTPS28225/6otherthantheinputundervoltagelockout.UnlessotherwisestatedallreferencestotheTPS28225applytotheTPS28226also.特性DrivesTwoN-ChannelMOSFETswith14-nsAdaptiveDeadTimeWideGateDriveVoltage:4.5VUpto8.8VWithBestEfficiencyat7Vto8VWidePowerSystemTrainInputVoltage:3VUpto27VWideInputPWMSignals:2.0Vupto13.2-VAmplitudeCapableDriveMOSFETswith≥40-ACurrentperPhaseHighFrequencyOperation:14-nsPropagationDelayand10-nsRise/FallTimeAllowFSW-2MHzCapablePropagate30-nsInputPWMPulses3Low-SideDriverSinkOn-Resistance(0.4)PreventsdV/dTRelatedShoot-ThroughCurrent3-StatePWMInputforPowerStageShutdownSpaceSavingEnable(input)andPowerGood(output)SignalsonSamePinThermalShutdownUVLOProtectionInternalBootstrapDiodeEconomicalSOIC-8andThermallyEnhanced3-mmx3-mmDFN-8PackagesHighPerformanceReplacementforPopular3-StateInputDriversAPPLICATIONSMulti-PhaseDC-to-DCConverterswithAnalogorDigitalControlDesktopandServerVRMsandEVRDsPortable/NotebookRegulatorsSynchronousRectificationforIsolatedPowerSupplies参数零二.UCC27211120V升压4A峰值电流的高频高侧/低侧驱动器描述UCC27210和UCC27211驱动器基于常见的UCC27200和UCC27201MOSFET驱动器,但是对性能进行了几项重大改进。峰值输出上拉和下拉电流已经被增加至4A拉电流和4A灌电流,并且上拉和下拉电阻已经被减少至0.9Ω,因此可以在MOSFET的米勒效应平台转换期间用尽可能小的开关损耗来驱动大功率MOSFET。现在,输入结构能够直接处理-10VDC,这增加了稳健耐用性,并且可实现与栅极驱动变压器的直接对接,而无需使用整流二极管。此输入与电源电压无关,并且具有一个20V的最大额定值。UCC27210/1的开关节点(HS引脚)能够处理-18V最大电压,这可保护高侧通道不受固有负电压所导致的寄生电感和离散电容的损坏。UCC27210(伪CMOS输入)和UCC27211(TTL输入)已经增加了滞后,从而使得到模拟或数字脉宽调制(PWM)控制器的接口具有增强的抗扰度。低端和高端栅极驱动器是独立控制的,并在彼此的接通和关断之间实现了至2ns的匹配。TPS28225TPS28226DriverConfiguration驱动配置singlesinglePeakOutputCurrent(A)66VCC(Min)(V)44VCC(Max)(V)8.88.8RiseTime(ns)1010FallTime(ns)55PropDelay(ns)1414SpecialFeaturesSynchronousRectification同步整流SynchronousRectification同步整流RatingCatalogCatalogOperatingTemperatureRange(C)-40to125-40to125Pin/Package8SOIC8SON8SOIC8SONApprox.Price(US$)0.59|1ku0.59|1ku4由于在芯片上集成了一个额定电压为120V的自举二极管,因此无需采用外部分立式二极管。为高端和低端驱动器提供了欠压闭锁功能,如果

1 / 61
下载文档,编辑使用

©2015-2020 m.777doc.com 三七文档.

备案号:鲁ICP备2024069028号-1 客服联系 QQ:2149211541

×
保存成功