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附录1：本科生毕业设计[论文]硅基亚波长波导研究院系光学与电子信息学院专业班级光电信息工程1201班姓名官山宏学号U201214092指导教师汪毅2016年5月30日华中科技大学毕业设计（论文）学位论文原创性声明本人郑重声明：所呈交的论文是本人在导师的指导下独立进行研究所取得的研究成果。除了文中特别加以标注引用的内容外，本论文不包括任何其他个人或集体已经发表或撰写的成果作品。本人完全意识到本声明的法律后果由本人承担。作者签名：年月日学位论文版权使用授权书本学位论文作者完全了解学校有关保障、使用学位论文的规定，同意学校保留并向有关学位论文管理部门或机构送交论文的复印件和电子版，允许论文被查阅和借阅。本人授权省级优秀学士论文评选机构将本学位论文的全部或部分内容编入有关数据进行检索，可以采用影印、缩印或扫描等复制手段保存和汇编本学位论文。本学位论文属于1、保密囗，在年解密后适用本授权书2、不保密囗。（请在以上相应方框内打“√”）作者签名：年月日导师签名：年月日华中科技大学毕业设计（论文）I摘要硅基光波导在光通信和光信号处理当中扮演者重要的角色。随着人们对大容量的光通信和快速的光信号处理的要求的提高，硅基光波导的研究受到广泛地关注。其中，绝缘体上硅(Silicon-on-Insulator）由于具有极低的传输损耗，使得以SOI为基础的光波导器件得到了迅速发展。对于普通的光波导，光线会沿着折射率高的芯层传播。但是，随着光波导在集成模块的应用，波导尺寸越来越小，在波导制造过程当中，刻蚀所引起的粗糙会极大的增加波导的损耗。亚波长光栅波导的出现减小了刻蚀的粗糙对波导损耗的影响，同时也提供给了一种可以定制材料折射率的波导结构。本文通过对硅基亚波长波导的研究，对具体的加工方法进行了学习，主要包括以下几个方面的工作：从亚波长光栅衍射理论出发，结合等效介质理论，利用软件模拟仿真，模拟分析了硅基亚波长光栅波导的传输特性，模场分布特性，以及色散。分析了硅层厚度为0.26μm的SOI亚波长光栅波导当中TE模和TM模的传输损耗。此外，设计优化得到了一种亚波长光栅耦合器，能够将纳米线硅波导当中光低损耗地耦合到亚波长光栅波导当中。在器件原型制备方面，完整的介绍了一套完整的硅基亚波长光栅耦合器的制作过程。在制作过程当中，采用电子束曝光以及ICP刻蚀的方法制备器件原型。关键词：SOI；亚波长光栅波导；耦合器华中科技大学毕业设计（论文）IIAbstractSiliconwaveguidesplaysanimportantroleinopticalcommunicationsandopticalsignalprocessing.Withthedevelopmentofthelarge-capacityopticalcommunicationsandrapidimprovementsofopticalsignalprocessing,siliconphotonicsreceivedwideattention.Duetolowopticallossesofsiliconinthetelecommunicationwindows,siliconwaveguideshavebeenwidelyapplied.Forordinaryopticalwaveguides,lightcanbespreadalongthehighrefractiveindexofthecorelayer.However,withthedevelopmentofintegratedoptics,waveguidesizesgettingsmallerandsmaller,thewaveguides’roughnesscausedbyetchingwillgreatlyincreasethelossofwaveguides.Thesubwavelengthgratingwaveguidecouldreducethelosscausedbytheroughness.Inaddition,subwavelengthgratingwaveguidealsoprovidesanewmethodtotailortheindexofwaveguide.Thispaperfocusesonsimulationsandfabricationprocessesofsiliconsubwavelengthwaveguidesandincludesthefollowingaspects:Thispaperbeginswithsubwavelengthgratingdiffractiontheory,combinedeffective-mediumtheorywithsoftwaresimulationtoanalysisthetransmissioncharacteristics,modefielddistributionanddispersionofsubwavelengthwaveguide.ThedifferenceoftransmissionlossbetweenTEmodeandTMmodehasbeensimulatedwithtopsiliconlayerthicknessof0.26um.Basedonthis,acouplerusedforcouplinglightfromSiliconwirewaveguidetosubwavelengthgratingwaveguideisproposedandoptimized.Inthepreparationoftheintegratedopticaldevices,acompleteprocessoffabricatinggratingcouplerandwavelengthisintroduced.Intheproductionprocess,electronbeamexposureandICPetchingareusedformanufacturingthedevices.KeyWords：SOI;subwavelengthgratingwaveguide；Coupler华中科技大学毕业设计（论文）III目录摘要..........................................................................................................................................IAbstract......................................................................................................................................II1绪论......................................................................................................................................11.1硅基光波导的发展·································································································11.2亚波长结构·············································································································21.3本文工作·················································································································42亚波长光栅波导的分析与仿真..........................................................................................52.1亚波长光栅简介·····································································································52.2光波导的导波原理分析·························································································62.3亚波长光栅波导分析·····························································································72.3.1有限时域差分法··································································································82.3.2有效介质理论······································································································82.4硅基亚波长光栅波导的仿真与分析·····································································92.5亚波长光栅波导耦合器·······················································································162.5.1亚波长光栅耦合器的设计················································································162.6本章小结···············································································································223SOI亚波长光栅波导的制作............................................................................................243.1微纳加工制造流程·······························································································243.1.1光刻····················································································································243.1.2刻蚀····················································································································263.2加工结果···············································································································27