MOS工艺

2020/1/11MOS晶体管的动作MOS晶体管实质上是一种使电流时而流过，时而切断的开关n+n+P型硅基板栅极（金属）绝缘层（SiO2）半导体基板漏极源极N沟MOS晶体管的基本结构源极(S)漏极(D)栅极(G)2020/1/11siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxideMOS晶体管的立体结构2020/1/11在硅衬底上制作MOS晶体管siliconsubstrate2020/1/11siliconsubstrateoxidefieldoxide2020/1/11siliconsubstrateoxidephotoresist2020/1/11ShadowonphotoresistphotoresistExposedareaofphotoresistChromeplatedglassmaskUltravioletLightsiliconsubstrateoxide2020/1/11非感光区域siliconsubstrate感光区域oxidephotoresist2020/1/11Shadowonphotoresistsiliconsubstrateoxidephotoresistphotoresist显影2020/1/11siliconsubstrateoxideoxidesiliconsubstratephotoresist腐蚀2020/1/11siliconsubstrateoxideoxidesiliconsubstratefieldoxide去胶2020/1/11siliconsubstrateoxideoxidegateoxidethinoxidelayer2020/1/11siliconsubstrateoxideoxidepolysilicongateoxide2020/1/11siliconsubstrateoxideoxidegategateultra-thingateoxidepolysilicongate2020/1/11siliconsubstrateoxideoxidegategatephotoresistScanningdirectionofionbeamimplantedionsinactiveregionoftransistorsImplantedionsinphotoresisttoberemovedduringresiststrip.sourcedrainionbeam2020/1/11siliconsubstrateoxideoxidegategatesourcedraindopedsilicon2020/1/11自对准工艺1.在有源区上覆盖一层薄氧化层2.淀积多晶硅，用多晶硅栅极版图刻蚀多晶硅3.以多晶硅栅极图形为掩膜板，刻蚀氧化膜4.离子注入2020/1/11siliconsubstratesourcedraingate2020/1/11siliconsubstrategatecontactholesdrainsource2020/1/11siliconsubstrategatecontactholesdrainsource2020/1/11完整的简单MOS晶体管结构siliconsubstratesourcedraingateoxideoxidetopoxidemetalconnectiontosourcemetalconnectiontogatemetalconnectiontodrainpolysilicongatedopedsiliconfieldoxidegateoxide2020/1/11CMOSFETP型sisubn+gateoxiden+gateoxideoxidep+p+2020/1/11VDDP阱工艺N阱工艺双阱工艺P-P+P+N+N+P+N+VSSVOUTVINVDDN-P+P+N+N+P+N+VSSVOUTVINVDDP-P+P+N+N+P+N+VSSVOUTVINN-SiP-SiN-I-SiN+-Si2020/1/11掩膜1：P阱光刻N-Si-衬底P-wellP-wellP-wellN+N+P+P+N+P+N-SiP2020/1/11具体步骤如下：1．生长二氧化硅（湿法氧化）：Si-衬底SiO2Si(固体)+2H2OSiO2（固体）+2H22020/1/112020/1/112．P阱光刻：涂胶腌膜对准曝光光源显影2020/1/112020/1/11硼掺杂（离子注入）刻蚀（等离子体刻蚀）去胶P+去除氧化膜P-well3．P阱掺杂：2020/1/112020/1/11离子源高压电源电流积分器离子束2020/1/11掩膜2：光刻有源区有源区：nMOS、PMOS晶体管形成的区域P+N+N+P+N-SiP-wellP-wellP-well♣淀积氮化硅光刻有源区场区氧化去除有源区氮化硅及二氧化硅SiO2隔离岛2020/1/11有源区depositednitridelayer有源区光刻板N型p型MOS制作区域(漏-栅-源)2020/1/11P-well1.淀积氮化硅：氧化膜生长（湿法氧化）P-well氮化膜生长P-well涂胶P-well对版曝光有源区光刻板2.光刻有源区：2020/1/11P-well显影P-well氮化硅刻蚀去胶3.场区氧化：P-well场区氧化（湿法氧化）P-well去除氮化硅薄膜及有源区SiO22020/1/11掩膜3：光刻多晶硅P-well去除氮化硅薄膜及有源区SiO2P-wellP+N+N+P+N-SiP-well栅极氧化膜多晶硅栅极♣生长栅极氧化膜淀积多晶硅光刻多晶硅2020/1/11P-well生长栅极氧化膜P-well淀积多晶硅P-well涂胶光刻多晶硅光刻板P-well多晶硅刻蚀2020/1/11掩膜4：P+区光刻1、P+区光刻2、离子注入B+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+2020/1/11P-wellP+P-wellP+P+硼离子注入去胶2020/1/11掩膜5：N+区光刻1、N+区光刻2、离子注入P+，栅区有多晶硅做掩蔽，称为硅栅自对准工艺。3、去胶P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+2020/1/11P-wellN+P-wellP+P+磷离子注入去胶P+P+N+N+2020/1/11掩膜6：光刻接触孔1、淀积PSG.2、光刻接触孔3、刻蚀接触孔P-wellP+N+N+P+N-SiP-wellP-wellP+P+N+N+磷硅玻璃（PSG)2020/1/11掩膜6：光刻接触孔P-wellP+P+N+N+淀积PSGP-wellP+P+N+N+光刻接触孔P-wellP+P+N+N+刻蚀接触孔P-wellP+P+N+N+去胶2020/1/112020/1/11掩膜7：光刻铝线1、淀积铝.2、光刻铝3、去胶P-wellP-wellP+P+N+N+2020/1/11P-wellP+P+N+N+铝线PSG场氧栅极氧化膜P+区P-wellN-型硅极板多晶硅N+区2020/1/11Example:Intel0.25micronProcess5metallayersTi/Al-Cu/Ti/TiNPolysilicondielectric2020/1/11InterconnectImpactonChip2020/1/11掩膜8：刻钝化孔CircuitPADCHIP