ir2101手册NMOS驱动器

DataSheetNo.PD-6.043CIR2101TypicalConnectionFeaturesnFloatingchanneldesignedforbootstrapoperationFullyoperationalto+600VToleranttonegativetransientvoltagedV/dtimmunenGatedrivesupplyrangefrom10to20VnUndervoltagelockoutn5VSchmitt-triggeredinputlogicnMatchedpropagationdelayforbothchannelsnOutputsinphasewithinputsDescriptionTheIR2101isahighvoltage,highspeedpowerMOSFETandIGBTdriverwithindependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenablerugge-dizedmonolithicconstruction.Thelogicinputiscom-patiblewithstandardCMOSorLSTTLoutputs.Theoutputdriversfeatureahighpulsecurrentbufferstagedesignedforminimumdrivercross-conduction.ThefloatingchannelcanbeusedtodriveanN-channelpowerMOSFETorIGBTinthehighsideconfigura-tionwhichoperatesupto600volts.HIGHANDLOWSIDEDRIVERPackagesProductSummaryVOFFSET600Vmax.IO+/-100mA/210mAVOUT10-20Vton/off(typ.)130&90nsDelayMatching30nsVCCVBVSHOLOCOMHINLINLINHINupto600VTOLOADVCCCONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-1IR2101B-2CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALParameterValueSymbolDefinitionMin.Max.UnitsVBHighSideFloatingSupplyVoltage-0.3625VSHighSideFloatingSupplyOffsetVoltageVB-25VB+0.3VHOHighSideFloatingOutputVoltageVS-0.3VB+0.3VCCLowSideandLogicFixedSupplyVoltage-0.325VLOLowSideOutputVoltage-0.3VCC+0.3VINLogicInputVoltage(HIN&LIN)-0.3VCC+0.3dVs/dtAllowableOffsetSupplyVoltageTransient—50V/nsPDPackagePowerDissipation@TA≤+25°C(8LeadDIP)—1.0(8LeadSOIC)—0.625RθJAThermalResistance,JunctiontoAmbient(8LeadDIP)—125(8LeadSOIC)—200TJJunctionTemperature—150TSStorageTemperature-55150°CTLLeadTemperature(Soldering,10seconds)—300AbsoluteMaximumRatingsAbsoluteMaximumRatingsindicatesustainedlimitsbeyondwhichdamagetothedevicemayoccur.Allvoltageparam-etersareabsolutevoltagesreferencedtoCOM.TheThermalResistanceandPowerDissipationratingsaremeasuredunderboardmountedandstillairconditions.ParameterValueSymbolDefinitionMin.Max.UnitsVBHighSideFloatingSupplyAbsoluteVoltageVS+10VS+20VSHighSideFloatingSupplyOffsetVoltageNote1600VHOHighSideFloatingOutputVoltageVSVBVCCLowSideandLogicFixedSupplyVoltage1020VLOLowSideOutputVoltage0VCCVINLogicInputVoltage(HIN&LIN)0VCCTAAmbientTemperature-40125Note1:LogicoperationalforVSof-5to+600V.LogicstateheldforVSof-5Vto-VBS.RecommendedOperatingConditionsTheInput/OutputlogictimingdiagramisshowninFigure1.Forproperoperationthedeviceshouldbeusedwithintherecommendedconditions.TheVSoffsetratingistestedwithallsuppliesbiasedat15Vdifferential.°CVW°C/WVIR2101CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-3ParameterValueSymbolDefinitionMin.Typ.Max.UnitsTestConditionsVIHLogic“1”InputVoltage2.7——VCC=10Vto20VVILLogic“0”InputVoltage——0.8VCC=10Vto20VVOHHighLevelOutputVoltage,VBIAS-VO——100IO=0AVOLLowLevelOutputVoltage,VO——100IO=0AILKOffsetSupplyLeakageCurrent——50VB=VS=600VIQBSQuiescentVBSSupplyCurrent—2050VIN=0Vor5VIQCCQuiescentVCCSupplyCurrent—140240μAVIN=0Vor5VIIN+Logic“1”InputBiasCurrent—2040VIN=5VIIN-Logic“0”InputBiasCurrent——1.0VIN=0VVCCUV+VCCSupplyUndervoltagePositiveGoing8.89.39.8ThresholdVCCUV-VCCSupplyUndervoltageNegativeGoing7.58.28.6ThresholdIO+OutputHighShortCircuitPulsedCurrent100125—VO=0V,VIN=5VPW≤10μsIO-OutputLowShortCircuitPulsedCurrent210250—VO=15V,VIN=0VPW≤10μsParameterValueSymbolDefinitionMin.Typ.Max.UnitsTestConditionstonTurn-OnPropagationDelay—130200VS=0VtoffTurn-OffPropagationDelay—90200VS=600VtrTurn-OnRiseTime—80120nstfTurn-OffFallTime—4070MTDelayMatching,HS&LSTurn-On/Off—30—StaticElectricalCharacteristicsVBIAS(VCC,VBS)=15VandTA=25°Cunlessotherwisespecified.TheVIN,VTHandIINparametersarereferencedtoCOM.TheVOandIOparametersarereferencedtoCOMandareapplicabletotherespectiveoutputleads:HOorLO.DynamicElectricalCharacteristicsVBIAS(VCC,VBS)=15V,CL=1000pFandTA=25°Cunlessotherwisespecified.mVVVmAIR2101B-4CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALFunctionalBlockDiagramLeadAssignments8LeadDIPSO-8IR2101IR2101SLeadDefinitionsLeadSymbolDescriptionHINLogicinputforhighsidegatedriveroutput(HO),inphaseLINLogicinputforlowsidegatedriveroutput(LO),inphaseVBHighsidefloatingsupplyHOHighsidegatedriveoutputVSHighsidefloatingsupplyreturnVCCLowsideandlogicfixedsupplyLOLowsidegatedriveoutputCOMLowsidereturnPULSEGENHINUVDETECTLINCOMHOVSVCCLOVBRQSPULSEFILTERHVLEVELSHIFTIR2101CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALB-5ThicknessofGateOxide800ÅConnectionsMaterialPolySiliconFirstWidth4μmLayerSpacing6μmThickness5000ÅMaterialAl-Si(Si:1.0%±0.1%)SecondWidth6μmLayerSpacing9μmThickness20,000ÅContactHoleDimension5μmX5μmInsulationLayerMaterialPSG(SiO2)Thickness1.5μmPassivationMaterialPSG(SiO2)Thickness1.5μmMethodofSawFullCutMethodofDieBondAblebond84-1WireBondMethodThermoSonicMaterialAu(1.0mil/1.3mil)LeadframeMaterialCuDieAreaAgLeadPlatingPb:Sn(37:63)PackageTypes8LeadPDIP/SO-8MaterialsEME6300/MP150/MP190Remarks:DeviceInformationProcess&DesignRuleHVDCMOS4.0μmTransistorCount168DieSize67X91X26(mil)DieOutlineIR2101B-6CONTROLINTEGRATEDCIRCUITDESIGNERS’MANUALFigure1.Input/OutputTimingDiagramFigure2.SwitchingTimeWaveformDefinitionsFigure3.DelayMatchingWaveformDefinitionsHINLINHOLOHINLINtrto