TEMT6000

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VISHAYTEMT6000DocumentNumber81579Rev.1.2,08-Jul-04VishaySemiconductors•AdaptedtohumaneyeresponsivityWideangleofhalfsensitivityϕ=±60°SMDstylepackageonPCBtechnologySuitableforIRreflowsolderingLeadfreecomponentComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/ECApplicationsAmbientlightsensorfordisplaybacklightdimmingin:MobilephonesNotebookcomputersPDA’sCamerasDashboardsAbsoluteMaximumRatingsTamb=25°C,unlessotherwisespecifiedParameterTestconditionSymbolValueUnitCollectorEmitterVoltageVCEO6VEmitterCollectorVoltageVECO1.5VCollectorcurrentIC20mATotalPowerDissipationTamb≤55°CPtot100mWJunctionTemperatureTj100°COperatingTemperatureRangeTamb-40to+85°CStorageTemperatureRangeTstg-40to+85°CSolderingTemperaturet≤3sTsd260°CThermalResistanceJunction/AmbientRthJA450K/=25°C,unlessotherwisespecifiedTypicalCharacteristics(Tamb=25°Cunlessotherwisespecified)ParameterTestconditionSymbolMinTyp.MaxUnitCollectorEmitterBreakdownVoltageIC=0.1mAVCEO6VCollectordarkcurrentVCE=5V,E=0ICEO350nACollector-emittercapacitanceVCE=0V,f=1MHz,E=0CCEO16pFCollectorLightCurrentEv=20lx,standardlightAIca3.51016µAEv=100lx,standardlightAIca50µAAngleofHalfSensitivityϕ±60degWavelengthofPeakSensitivityλp570nmRangeofSpectralBandwidthλ0.1360to970nmCollectorEmitterSaturationVoltageEv=20lx,0.45µAVCEsat0.1VFigure1.CollectorLightCurrentvs.IlluminanceFigure2.RelativeSpectralResponsivityvs.Wavelength190061101001000101001000Ev-Illuminance(lx)I-CollectorLightCurrent(A)caµ0.00.20.40.60.81.01.23004005006007008009001000110018465λ-Wavelength(nm)S()-RelativeSpectralSensitivityrelλFigure3.RelativeRadiantSensitivityvs.AngularDisplacement0.40.200.20.4S-RelativeSensitivityrel0.69483180.60.90.80°°30°102040°50°60°70°80°0.71.0°VISHAYTEMT6000DocumentNumber81579Rev.1.2,08-Jul-04VishaySemiconductors(MBB)topreventtheproductsfrommoistureabsorptionduringtransportationandstorage.Eachbagcontainsades-iccant.FloorLifeFloorlife(timebetweensolderingandremovingfromMBB)mustnotexceedthetimeindicatedinJ-STD-020.TEMT6000isreleasedfor:MoistureSensitivityLevel4,accordingtoJEDEC,J-STD-020FloorLife:72hConditions:Tamb30°C,RH60%DryingIncaseofmoistureabsorptiondevicesshouldbebakedbeforesoldering.ConditionsseeJ-STD-020orLabel.Devicestapedonreeldryusingrecommendedconditions192h@40°C(+5°C),RH5%Figure4.Lead-Free(Sn)ReflowSolderProfileFigure5.LeadTin(SnPb)ReflowSolderProfile18020Temperature(C)°20s~30s~40s120s~125C°145C°210C°250C°260C°28026024022020018016014080604010012000609030150120210240270300Time(s)PreheatReflowCooling19030max.160Cfullline:typicaldottedline:processlimitsTime(s)Temperature(C)LeadTemperature90s-120s300250200150100500050100150200250max.240Cca.230C10s215Cmax40s2K/s-4K/s948625°°°°°(ODSs).TheMontrealProtocol(1987)anditsLondonAmendments(1990)intendtoseverelyrestricttheuseofODSsandforbidtheirusewithinthenexttenyears.Variousnationalandinternationalinitiativesarepressingforanearlierbanonthesesubstances.VishaySemiconductorGmbHhasbeenabletouseitspolicyofcontinuousimprovementstoeliminatetheuseofODSslistedinthefollowingdocuments.1.AnnexA,BandlistoftransitionalsubstancesoftheMontrealProtocolandtheLondonAmendmentsrespectively2.ClassIandIIozonedepletingsubstancesintheCleanAirActAmendmentsof1990bytheEnvironmentalProtectionAgency(EPA)intheUSA3.CouncilDecision88/540/EECand91/690/EECAnnexA,BandC(transitionalsubstances)respectively.VishaySemiconductorGmbHcancertifythatoursemiconductorsarenotmanufacturedwithozonedepletingsubstancesanddonotcontainsuchsubstances.Wereservetherighttomakechangestoimprovetechnicaldesignandmaydosowithoutfurthernotice.Parameterscanvaryindifferentapplications.Alloperatingparametersmustbevalidatedforeachcustomerapplicationbythecustomer.ShouldthebuyeruseVishaySemiconductorsproductsforanyunintendedorunauthorizedapplication,thebuyershallindemnifyVishaySemiconductorsagainstallclaims,costs,damages,andexpenses,arisingoutof,directlyorindirectly,anyclaimofpersonaldamage,injuryordeathassociatedwithsuchunintendedorunauthor

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