IS62WV51216BLL-55TLI中文资料

IntegratedSiliconSolution,Inc.——1-800-379-47741Rev.B02/24/05IS62WV51216ALLIS62WV51216BLLISSI®Copyright©2005IntegratedSiliconSolution,Inc.Allrightsreserved.ISSIreservestherighttomakechangestothisspecificationanditsproductsatanytimewithoutnotice.ISSIassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsorservicesdescribedherein.Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationandbeforeplacingordersforproducts.512Kx16LOWVOLTAGE,ULTRALOWPOWERCMOSSTATICRAMFEATURES•High-speedaccesstime:45ns,55nsCMOSlowpoweroperation–36mW(typical)operating–12µW(typical)CMOSstandbyTTLcompatibleinterfacelevelsSinglepowersupply–1.65V--2.2VVDD(62WV51216ALL)–2.5V--3.6VVDD(62WV51216BLL)Fullystaticoperation:noclockorrefreshrequiredThreestateoutputsDatacontrolforupperandlowerbytesIndustrialtemperatureavailableLead-freeavailableDESCRIPTIONTheISSIIS62WV51216ALL/IS62WV51216BLLarehigh-speed,8MbitstaticRAMsorganizedas512Kwordsby16bits.ItisfabricatedusingISSI'shigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldshigh-performanceandlowpowerconsumptiondevices.WhenCS1isHIGH(deselected)orwhenCS2isLOW(deselected)orwhenCS1isLOW,CS2isHIGHandbothLBandUBareHIGH,thedeviceassumesastandbymodeatwhichthepowerdissipationcanbereduceddownwithCMOSinputlevels.EasymemoryexpansionisprovidedbyusingChipEnableandOutputEnableinputs.TheactiveLOWWriteEnable(WE)controlsbothwritingandreadingofthememory.AdatabyteallowsUpperByte(UB)andLowerByte(LB)access.TheIS62WV51216ALLandIS62WV51216BLLarepackagedintheJEDECstandard48-pinminiBGA(7.2mmx8.7mm)and44-PinTSOP(TYPEII).FUNCTIONALBLOCKDIAGRAMFEBRUARY2005A0-A18CS1OEWE512Kx16MEMORYARRAYDECODERCOLUMNI/OCONTROLCIRCUITGNDVDDI/ODATACIRCUITI/O0-I/O7LowerByteI/O8-I/O15UpperByteUBLBCS22IntegratedSiliconSolution,Inc.——1-800-379-4774Rev.B02/24/05IS62WV51216ALL,IS62WV51216BLLISSI®PINCONFIGURATIONS48-PinminiBGA(7.2mmx8.7mm)PINDESCRIPTIONSA0-A18AddressInputsI/O0-I/O15DataInputs/OutputsCS1,CS2ChipEnableInputOEOutputEnableInputWEWriteEnableInputLBLower-byteControl(I/O0-I/O7)UBUpper-byteControl(I/O8-I/O15)NCNoConnectionVDDPowerGNDGround123456ABCDEFGHLBOEA0A1A2CS2I/O8UBA3A4CS1I/O0I/O9I/O10A5A6I/O1I/O2GNDI/O11A17A7I/O3VDD`VDDI/O12GNDA16I/O4GNDI/O14I/O13A14A15I/O5I/O6I/O15NCA12A13WEI/O7A18A8A9A10A11NC1234567891011121314151617181920212244434241403938373635343332313029282726252423A4A3A2A1A0CS1I/O0I/O1I/O2I/O3VDDGNDI/O4I/O5I/O6I/O7WEA16A15A14A13A12A5A6A7OEUBLBI/O15I/O14I/O13I/O12GNDVDDI/O11I/O10I/O9I/O8A18A8A9A10A11A1744-PinTSOP(TypeII)IntegratedSiliconSolution,Inc.——1-800-379-47743Rev.B02/24/05IS62WV51216ALL,IS62WV51216BLLISSI®TRUTHTABLEI/OPINModeWEWEWEWEWECS1CS1CS1CS1CS1CS2OEOEOEOEOELBLBLBLBLBUBUBUBUBUBI/O0-I/O7I/O8-I/O15VDDCurrentNotSelectedXHXXXXHigh-ZHigh-ZISB1,ISB2XXLXXXHigh-ZHigh-ZISB1,ISB2XXXXHHHigh-ZHigh-ZISB1,ISB2OutputDisabledHLHHLXHigh-ZHigh-ZICCHLHHXLHigh-ZHigh-ZICCReadHLHLLHDOUTHigh-ZICCHLHLHLHigh-ZDOUTHLHLLLDOUTDOUTWriteLLHXLHDINHigh-ZICCLLHXHLHigh-ZDINLLHXLLDINDINOPERATINGRANGE(VDD)RangeAmbientTemperatureIS62WV51216ALL(70ns)IS62WV51216BLL(55ns,70ns)IS62WV51216BLL(45ns)Commercial0°Cto+70°C1.65V-2.2V2.5V-3.6V3.0-3.6VIndustrial–40°Cto+85°C1.65V-2.2V2.5V-3.6V4IntegratedSiliconSolution,Inc.——1-800-379-4774Rev.B02/24/05IS62WV51216ALL,IS62WV51216BLLISSI®DCELECTRICALCHARACTERISTICS(OverOperatingRange)SymbolParameterTestConditionsVDDMin.Max.UnitVOHOutputHIGHVoltageIOH=-0.1mA1.65-2.2V1.4—VIOH=-1mA2.5-3.6V2.2—VVOLOutputLOWVoltageIOL=0.1mA1.65-2.2V—0.2VIOL=2.1mA2.5-3.6V—0.4VVIHInputHIGHVoltage1.65-2.2V1.4VDD+0.2V2.5-3.6V2.2VDD+0.3VVIL(1)InputLOWVoltage1.65-2.2V–0.20.4V2.5-3.6V–0.20.6VILIInputLeakageGND≤VIN≤VDD–11µAILOOutputLeakageGND≤VOUT≤VDD,OutputsDisabled–11µANotes:1.VIL(min.)=–1.0Vforpulsewidthlessthan10ns.ABSOLUTEMAXIMUMRATINGS(1)SymbolParameterValueUnitVTERMTerminalVoltagewithRespecttoGND–0.2toVDD+0.3VTBIASTemperatureUnderBias–40to+85°CVDDVDDRelatedtoGND–0.2to+3.8VTSTGStorageTemperature–65to+150°CPTPowerDissipation1.0WNote:1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.IntegratedSiliconSolution,Inc.——1-800-379-47745Rev.B02/24/05IS62WV51216ALL,IS62WV51216BLLISSI®ACTESTCONDITIONSParameter62WV51216ALL62WV51216BLL(Unit)(Unit)InputPulseLevel0.4VtoVDD-0.20.4VtoVDD-0.3VInputRiseandFallTimes5ns5nsInputandOutputTimingVREFVREFandReferenceLevelOutputLoadSeeFigures1and2SeeFigures1and2ACTESTLOADSFigure1Figure262WV51216ALL62WV51216BLL(1.65V-2.2V)(2.5V-3.6V)R1(Ω)30701029R2(Ω)31501728VREF0.9V1.5VVTM1.8V2.8VCAPACITANCE(1)SymbolParameterConditionsMax.UnitCINInputCapacitanceVIN=0V8pFCOUTInput/OutputCapacitanceVOUT=0V10pFNote:1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffectthe