MC33390中文资料

MOTOROLASEMICONDUCTORTECHNICALDATA©Motorola,Inc.200333390SimplifiedApplicationDiagramDocumentordernumber:MC33390/DRev4.0,2/200333390ClassBSerialTransceiverThe33390isaserialtransceiverdesignedtoprovidebi-directionalhalf-duplexcommunicationmeetingtheautomotiveSAEStandardJ-1850ClassBDataCommunicationNetworkInterfacespecification.Itisdesignedtointerfacedirectlytoon-boardvehiclemicrocontrollersandservestotransmitandreceivedataonasingle-wirebusatdataratesof10.4kbpsusingVariablePulseWidthModulation(VPWM).The33390operatesdirectlyfromavehicle's12VbatterysystemandfunctionsinalogicfashionasanI/Ointerfacebetweenthemicrocontroller's5.0VCMOSlogiclevelswingsandtherequired0Vto7.0Vwaveshapedsignalswingsofthebus.Thebusoutputdriverisshortcircuitcurrentlimited.Features•DesignedforSAEJ-1850ClassBDataRates•FullOperationalBusDynamicsOveraSupplyVoltageof9.0to16V•AmbientOperatingTemperatureof-40°Cto125°C•InterfacesDirectlytoStandard5.0VCMOSMicrocontroller•BUSPinProtectedAgainstShortstoBatteryandGround•ThermalShutdownwithHysteresis•VoltageWaveshapingofBusOutputDriver•40VMaxVBATCapabilityJ-1850SERIALTRANSCEIVERORDERINGINFORMATIONDeviceTemperatureRange(TA)PackageMC33390D/DR2-40to125°C8SOICNDSUFFIXPLASTICPACKAGECASE751(8-LEADSOICN)33390BUSVBATSLEEPTxRx4X/LOOPGNDLOADPrimaryNodeMCUVBATSecondaryNodes10.6kΩ470pF47µHFreescaleSemiconductor,IFreescaleSemiconductor,Inc.ForMoreInformationOnThisProduct,Goto::=normalwaveshaping,Logic1=waveshapingdisabledfor4Xtransmitting,highimpedance=loopbackmode.7TxSerialdatainput(DI)fromthemicrocontrollertobetransmittedontoBus.8RxBusreceivedserialdataoutput(DO)senttothemicrocontroller.2348765112438756RxTxVBAT4X/LOOPSLEEPGNDLOADBUSFreescaleSemiconductor,IFreescaleSemiconductor,Inc.ForMoreInformationOnThisProduct,Goto:(Note1)VBAT-0.3to40VInputI/OTerminals(Note2)VI/O(CPU)-0.3to7.0VBUSandLOADOutputsVBUS-2.0to16VESDVoltageHumanBodyModel(Note3)MachineModel(Note4)VESD1VESD2±2000±200VStorageTemperatureTSTG-65to150°COperatingAmbientTemperatureTA-40to125°COperatingJunctionTemperatureTJ-40to150°CSolderingTemperature(for10seconds)TSOLDER260°CThermalResistance(Junction-to-Ambient)RθJ-A180°C/WNotes1.Anexternalseriesdiodemustbeusedtoprovidereversebatteryprotectionofthedevice.2.SLEEP,TX,RX,and4X/LOOParenormallyconnectedtoamicrocontroller.3.ESD1testingisperformedinaccordancewiththeHumanBodyModel(CZAP=100pF,RZAP=1500Ω).4.ESD2testingisperformedinaccordancewiththeMachineModel(CZAP=200pF,RZAP=0Ω).FreescaleSemiconductor,IFreescaleSemiconductor,Inc.ForMoreInformationOnThisProduct,Goto:≤VBAT≤16V,-40°C≤TA≤125°C,SLEEP=5.0Vunlessotherwisenoted.Typicalvaluesreflecttheparameter'sapproximatemidpointaveragevaluewithVBAT=13V,TA=25°C.Allpositivecurrentsareintothepin.Allnegativecurrentsareoutofthepin.CharacteristicSymbolMinTypMaxUnitPOWERCONSUMPTIONOperationalBatteryCurrent(RMSwithTx=7.812kHzSquareWave)BUSLoad=1380ΩtoGND,3.6nFtoGNDBUSLoad=257ΩtoGND,20.2nFtoGNDIBAT(OP1)IBAT(OP2)––3.022.411.532mABatteryBusLowInputCurrentAfterSLEEPToggleLowtoHigh;PriortoTxTogglingAfterTxToggleHightoLowIBAT(BUSL1)IBAT(BUSL2)––1.16.43.08.5mASleepStateBatteryCurrentVSLEEP=0VIBAT(SLEEP)–38.265µABUSBUSInputReceiverThreshold(Note5)ThresholdHigh(BusIncreasinguntilRx≥3.0V)ThresholdLow(BusDecreasinguntilRx≤3.0V)ThresholdinSleepState(SLEEP=0V)Hysteresis(VBUS(IH)-VBUS(IL),SLEEP=0V)VBUS(IH)VBUS(IL)BUSTH(SLEEP)VBUS(HYST)4.25–2.40.13.93.73.00.2–3.53.40.6VBUS-OutVoltage(257Ω≤RBUS(L)toGND≤1380Ω)8.2V≤VBAT≤16V,Tx=5.0V4.25V≤VBAT≤8.2V,Tx=5.0VTx=0VVBUS(OUT1)VBUS(OUT2)VBUS(OUT3)6.25VBAT-1.6–6.9–0.278.0VBAT0.7VBUSShortCircuitOutputCurrentTx=5.0V,-2.0V≤VBUS≤4.8VIBUS(SHORT)60129170mABUSLeakageCurrent-2.0V≤VBUS≤0V0V≤VBUS≤VBATIBUS(LEAK1)IBUS(LEAK2)-500–-55189–500µABUSThermalShutdown(Note6)(Tx=5.0V,IBUS=-0.1mA)IncreaseTemperatureuntilVBUS≤2.5VTBUS(LIM)150170190°CBUSThermalShutdownHysteresis(Note7)TBUS(LIM)-TBUS(REEN)TBUS(LIMHYS)101215°CB