7805ALPRPFI中文资料

1MemoryAlldatasheetsaresubjecttochangewithoutnotice(858)503-3300Fax:[phone]-©2005MaxwellTechnologiesAllrightsreserved.01.10.05Rev9FEATURES:•16-bitorganizationLatchupProtectionTechnology™RAD-PAK®radiation-hardenedagainstnaturalspaceradia-tionTotaldosehardness:-50krads(Si),dependinguponspacemissionLatchupconvertedtoreset.-Ratebasedoncrosssectionandmission.Package:-28pinRAD-PAK®flatpack-28pinRAD-PAK®DIP100kHzminsamplingrateStandard±10VinputrangeAdvanceCMOStechnology-86dBminSINADwith20kHzinput-Single5Vsupplyoperation-Utilizesinternalorexternalreference-Fullparalleldataoutput-Powerdissipation:132mWmaxDESCRIPTION:MaxwellTechnologies’7805ALPhigh-speedanalog-to-digitalconverterfeaturesagreaterthan50krad(Si)totaldosetoler-ance,dependinguponspacemission.UsingMawell’sradia-tion-hardenedRAD-PAK®packagingtechnology,the7805ALPincorporatesthecommercialADS7805fromBurrBrown.ThisdeviceislatchupprotectedbyMaxwellTechnologies’LPT™technology.The7805ALP,16-bitsamplingCMOSA/D.Thedevicecontainsacomplete16-bitcapacitor-basedSARA/DwithS/H,reference,clock,interfaceformicroprocessoruse,andthree-stateoutputdrivers.The7805ALPisspecifiedata100kHzsamplingrate,andguaranteedoverthefulltempera-turerange.Laser-trimmedscalingresistorsprovideanindus-try-standard±10Vinputrange,whiletheinnovativedesignallowsoperationfromasingle5Vsupply,withpowerdissipa-tionofunder132mW.MaxwellTechnologies'patentedRAD-PAK®packagingtechnol-ogyincorporatesradiationshieldinginthemicrocircuitpack-age.Iteliminatestheneedforboxshieldingwhileprovidingtherequiredradiationshieldingforalifetimeinorbitorspacemission.InaGEOorbit,RAD-PAK®providesgreaterthan50krad(Si)radiationdosetolerance.ThisproductisavailablewithscreeninguptoMaxwellTechnologiesself-defienedClassK.LogicDiagramMemory2Alldatasheetsaresubjecttochangewithoutnotice©2005MaxwellTechnologiesAllrightsreserved.16-BitLatchupProtectedADC7805ALP01.10.05Rev9TABLE1.7805ALPPINOUTDESCRIPTIONPINNUMBERNAMEDIGITALI/ODESCRIPTION1VINAnaloginput.2AGND1Analogground.Usedinternallyasgroundreferencepoint.3REFReferenceinput/output.2.2µFtantalumcapacitortoground4CAPReferencebuffercapacitor.2.2µFtantalumcapacitortoground.5AGND2Analogground.6D15(MSB)0Databit15.MostSignificantBit(MSB)ofconversionresults.WhenSTATUSisHIGH*,D15mustnotbedrivenhigh.7D140Databit14.WhenSTATUSisHIGH*,D14mustnotbedrivenhigh.8D130Databit13.WhenSTATUSisHIGH*,D13mustnotbedrivenhigh.9D120Databit12.WhenSTATUSisHIGH*,D12mustnotbedrivenhigh.10D110Databit11.WhenSTATUSisHIGH*,D11mustnotbedrivenhigh.11D100Databit10.WhenSTATUSisHIGH*,D10mustnotbedrivenhigh.12D90Databit9.WhenSTATUSisHIGH*,D9mustnotbedrivenhigh.13D80Databit8.WhenSTATUSisHIGH*,D8mustnotbedrivenhigh.14DGNDDigitalGround15D70Databit7.WhenSTATUSisHIGH*,D7mustnotbedrivenhigh.16D60Databit6.WhenSTATUSisHIGH*,D6mustnotbedrivenhigh.17D50Databit5.WhenSTATUSisHIGH*,D5mustnotbedrivenhigh.18D40Databit4.WhenSTATUSisHIGH*,D4mustnotbedrivenhigh.19D30Databit3.WhenSTATUSisHIGH*,D3mustnotbedrivenhigh.20D20Databit2.WhenSTATUSisHIGH*,D2mustnotbedrivenhigh.21D10Databit1.WhenSTATUSisHIGH*,D1mustnotbedrivenhigh.22D0(LSB)0Databit0.LeastSignificantBit(LSB)ofconversionresults.WhenSTATUSisHIGH*,D0mustnotbedrivenhigh.23STATUS*0STATUSwhenHIGHindicateslatchupprotectionisactiveandoutputdataisinvalid.Capacitiveloadingshouldnotexceed1000pF.24R/CIWithCSLOWandBUSYHIGH,afallingedgeofR/Cinitiatesanewconversion.WhenSTATUSisHIGH*,CSandR/Cmustnotbedrivenhigh.25CSIInternallyOR’dwithR/C.IfR/CLOW,afallingedgeonCSinitiatesanewconver-sion.WhenSTATUSisHIGH*,CSandR/Cmustnotbedrivenhigh.26BUSY0Atthestartofaconversion,BUSYgoesLOWandstaysLOWuntiltheconversioniscompletedandthedigitaloutputshavebeenupdated.27DECPLNGSupplyvoltagehighspeeddecouplingpin.Decoupletogroundwith1.0µFceramiccapacitor.28VSSupplyinput.Nominally5V.Decoupletogroundwith10µFtantalumcapacitor.Memory3Alldatasheetsaresubjecttochangewithoutnotice©2005MaxwellTechnologiesAllrightsreserved.16-BitLatchupProtectedADC7805ALP01.10.05Rev9TABLE2.7805ALPABSOLUTEMAXIMUMRATINGSPARAMETERSYMBOLMINTYPMAXUNITAnalogInputsVINCAPREF-25VS9------25AGND2-0.3--VGroundVoltageDifferenceDGNDAGND1AGND2-0.3-0.3-0.3------0.30.30.3VSupplyInputVS--7VDigitalInputs-0.3--VS+0.3VThermalImpedanceΘJC11°C/WInternalPowerDissipation----825mWMaximumJunctionTemperatureTJ----165°CTABLE3.7805ALPDCACCURACYSPECIFICATIONS(VS=5V,TA=-40TO+85°CUNLESSOTHERWISESPECIFIED)PARAMETERCONDITIONSSUBGROUPSMINTYPMAXUNITIntegralLinearityError----±3LSBDifferentialLinearityError----4,-1LSBNoMissingCodes11.Guaranteedbydesign15----BitsTransitionNoise22.Typicalrmsnoiseatworstcasetransitionsandtemperatures.--1.3--LSBFullScaleError3,43.Measuredwithvariousfixedresistors.4.Fullscaleerrorisworstcase-FullScaleor+FullScaleuntrimmeddeviationfromidealfirstandlastcodetransitions,dividedbythetransitionvoltage(notdividedbythefull-scalerange)andincludedtheeffectofoffseterror.----±0.5%FullScaleErrorDrift--±7--ppm/°CBipolarZeroError3----±10mVBipolarZeroErrorDrift--±2--ppm/°CPowerSupplySensitivity4.8VVS5.25V----±8LSBTA