NXP-BAV99中文资料

1.Productprofile1.1GeneraldescriptionHigh-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages.1.2Featuresandbenefits1.3Applications1.4Quickreferencedata[1]WhenswitchedfromIF=10mAtoIR=10mA;RL=100Ω;measuredatIR=1mA.BAV99seriesHigh-speedswitchingdiodesRev.8—18November2010ProductdatasheetTable1.ProductoverviewTypenumberPackageConfigurationPackageconfigurationNXPJEITAJEDECBAV99SOT23-TO-236ABdualseriessmallBAV99SSOT363SC-88-quadruple;2seriesverysmallBAV99WSOT323SC-70-dualseriesverysmall„Highswitchingspeed:trr≤4ns„Lowcapacitance:Cd≤1.5pF„Lowleakagecurrent„Reversevoltage:VR≤100V„SmallSMDplasticpackages„AEC-Q101qualified„High-speedswitching„Reversepolarityprotection„General-purposeswitchingTable2.QuickreferencedataSymbolParameterConditionsMinTypMaxUnitPerdiodeIRreversecurrentVR=80V--0.5μAVRreversevoltage--100Vtrrreverserecoverytime[1]--4nsBAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.©NXPB.V.2010.Allrightsreserved.ProductdatasheetRev.8—18November20102of14NXPSemiconductorsBAV99seriesHigh-speedswitchingdiodes2.Pinninginformation3.Orderinginformation4.Marking[1]*=placeholderformanufacturingsitecodeTable3.PinningPinDescriptionSimplifiedoutlineGraphicsymbolBAV99;BAV99W1anode(diode1)2cathode(diode2)3cathode(diode1),anode(diode2)BAV99S1anode(diode1)2cathode(diode2)3cathode(diode3),anode(diode4)4anode(diode3)5cathode(diode4)6cathode(diode1),anode(diode2)006aaa144123006aaa763123132456006aab101136254Table4.OrderinginformationTypenumberPackageNameDescriptionVersionBAV99-plasticsurface-mountedpackage;3leadsSOT23BAV99SSC-88plasticsurface-mountedpackage;6leadsSOT363BAV99WSC-70plasticsurface-mountedpackage;3leadsSOT323Table5.MarkingcodesTypenumberMarkingcode[1]BAV99A7*BAV99SK1*BAV99WA7*BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.©NXPB.V.2010.Allrightsreserved.ProductdatasheetRev.8—18November20103of14NXPSemiconductorsBAV99seriesHigh-speedswitchingdiodes5.Limitingvalues[1]Singlediodeloaded.[2]Doublediodeloaded.[3]Tj=25°Cpriortosurge.[4]DevicemountedonanFR4Printed-CircuitBoard(PCB),single-sidedcopper,tin-platedandstandardfootprint.[5]Solderingpointsatpins2,3,5and6.Table6.LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).SymbolParameterConditionsMinMaxUnitPerdiodeVRRMrepetitivepeakreversevoltage-100VVRreversevoltage-100VIFforwardcurrentBAV99[1]-215mA[2]-125mABAV99S[1]-200mABAV99W[1]-150mA[2]-130mAIFRMrepetitivepeakforwardcurrent-500mAIFSMnon-repetitivepeakforwardcurrentsquarewave[3]tp=1μs-4Atp=1ms-1Atp=1s-0.5APtottotalpowerdissipation[1][4]BAV99Tamb≤25°C-250mWBAV99STsp≤85°C[5]-250mWBAV99WTamb≤25°C-200mWPerdeviceTjjunctiontemperature-150°CTambambienttemperature−65+150°CTstgstoragetemperature−65+150°CBAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.©NXPB.V.2010.Allrightsreserved.ProductdatasheetRev.8—18November20104of14NXPSemiconductorsBAV99seriesHigh-speedswitchingdiodes6.Thermalcharacteristics[1]Singlediodeloaded.[2]DevicemountedonanFR4PCB,single-sidedcopper,tin-platedandstandardfootprint.[3]Solderingpointsatpins2,3,5and6.7.Characteristics[1]WhenswitchedfromIF=10mAtoIR=10mA;RL=100Ω;measuredatIR=1mA.[2]WhenswitchedfromIF=10mA;tr=20ns.Table7.ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-a)thermalresistancefromjunctiontoambientinfreeair[1][2]BAV99--500K/WBAV99W--625K/WRth(j-sp)thermalresistancefromjunctiontosolderpointBAV99--360K/WBAV99S[3]--260K/WBAV99W--300K/WTable8.CharacteristicsTamb=25°Cunlessotherwisespecified.SymbolParameterConditionsMinTypMaxUnitPerdiodeVFforwardvoltageIF=1mA--715mVIF=10mA--855mVIF=50mA--1VIF=150mA--1.25VIRreversecurrentVR=25V--30nAVR=80V--0.5μAVR=25V;Tj=150°C--30μAVR=80V;Tj=150°C--50μACddiodecapacitancef=1MHz;VR=0V--1.5pFtrrreverserecoverytime[1]--4nsVFRforwardrecoveryvoltage[2]--1.75VBAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.©NXPB.V.2010.Allrightsreserved.ProductdatasheetRev.8—18November20105of14NXPSemiconductorsBAV99seriesHigh-speedswitchingdiodes(1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=−40°C(1)Tamb=150°C(2)Tamb=85°C(3)Tamb=25°C(4)Tamb=−40°CFig1.Forwardcurrentasafunctionofforwardvoltage;typicalvaluesFig2.Reversecurrentasafunctionofreversevoltage;typicalvaluesf=1MHz;Tamb=25°CBasedonsquarewavecurrents.Tj=25°C;priortosurgeFig3.Diodecapacitanceasafunctionofreversevoltage;typicalvaluesFig4.Non-repetitivepeakforwardcurrentasafunctionofpulseduration;maximumvalues006aab132110102103IF(mA)10−1VF(V)01.41.00.40.80.21.20.6(1)(2)(3)(4)006aab133102IR(μA)VR(V)01008040602010110−110−210−310−410−5(1)(2)(3)(4)08161240.80.600.40.2mbg446VR(V)Cd(pF)mbg704101102IFSM(A)10−1tp(μs)110410310102BAV99_SERAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.©NXPB.V.2010.Allrightsreserved.ProductdatasheetRev.8—18November20106of14NXPSemiconductorsBAV99seriesHigh-speedswitchingdiodes8.Testinformation8.1QualityinformationThisproducthasbeenqualifiedinaccordancewiththeAutomotiveElectronicsCouncil(AEC)standardQ101-Stresstestqualificationfordiscretesemico