涂层原理介绍

IntroductionofPVDcoatingtechnologyPVD涂层工艺介绍Page2BusinessUnitCoatingServices/June2007Thecoatingformationconsistsofthreemainphases涂层形成的三个主要阶段CoatingmaterialVaporization蒸发Energy能源Outputmaterials需要的材料(target,cathode,ingot,etc.靶材，阴极，铸块)Workinggasinflow工作气体流入1.Particletransportintheplasma等离子环境中的粒子运动Coldplasma冷等离子体ReactivegasInflow反应气体流入------++++++Electrons电子Ions离子(+/-)Molecules分子Radicals原子团Atoms原子2.ToolCondensation凝结Basematerial基体材料(substrate)Bias偏压-3.Page3BusinessUnitCoatingServices/June2007ThreemainPVDcoatingtechniqueshavebeenestablishedinthemarket市场上的三种主要的PVD涂层技术Thecoatingtechniquesaremainlycharacterizedbythetypeofvaporization涂层技术分类主要依据蒸发方式不同而分IonPlating离子电镀(Balzerstechnique巴尔查斯技术)MagnetronSputtering磁控溅射(MSIP)ArcIonPlating电弧镀(AIP)Coatingmaterialvaporization涂层材料，蒸发Ionizationefficiency离子化率Plasma等离子/Electronbeam电子束Mechanical机械的Electricarc电弧50%5-10%90%1.2.3.Technique技术Keyproperties主要特征Verysmoothcoatings,especiallysuitableforplasticsprocessing很光滑，特别适合塑料处理工艺Relativelysmoothsurface,lowcoatingtemperature相对光滑的表面，低涂层温度Roughcoating,highhardness,highadhesion粗糙，高硬度，高结合力Page4BusinessUnitCoatingServices/June20071.IonPlating-Electronbeamvaporization,principle离子镀－电子束蒸发，原理Substrate基体Ticoating钛涂层Principle原理1.Electronbeamheatsthematerialtobevaporized.Thebeamisguidedbymagnets(similartoTVtubes)电子束打到被蒸发材料上。电子束是被磁体引导的（与电视电子管相似）2.Vaporizationandtransportarefacilitatedbythevacuum蒸发和离子运动都在真空环境中进行3.Vaporcondensesonthesubstrate基体表面蒸发凝结Typicalvalues典型数值Highvoltage高压5-10kVElectroncurrentupto1.5A电流1.5AElectronsource(cathode)阴极电源Coatingmaterial涂层材料(e.g.Ti)Electronbeam电子束-+++++++--+-+---Substratebias基础偏压+Chamberwall设备壁-Page5BusinessUnitCoatingServices/June20071.IonPlating-Electronbeamvaporization离子镀－电子束蒸发Page6BusinessUnitCoatingServices/June2007Principle原理:1.Titaniumisthermallyvaporizedandionizedbyanelectronbeam(200A)钛被热蒸发，并被电子束离子化（200A)2.Thesubstratesareheldatanegativevoltagetoattracttheions基体被固定在负电压上以吸引离子3.The(positive)ionsreactwiththenitrogenthatisfedintoformtitaniumnitride正离子与氮气反应并形成钛涂层Argon氩Argon氩Reactivegas反应气体N2Workpieces工件(negativevoltage负电压)Coatingmaterial涂层材料,e.g.Ti例如，钛Crucible坩埚(positivevoltage正电压)Work-piece工件Electron-beamsource电子束源Vacuumpump真空泵450-500°C+----+--1.IonPlating-Plasmabeamvaporization离子镀－等离子束蒸发Page7BusinessUnitCoatingServices/June20072.ArcIonPlating(AIP)–Principle电弧镀－原理Typ.200A/30VTarget靶材(e.g.Ti)Anode阳极/Chamberwall设备壁-ArcSubstrate基体Ticoating钛涂层Chamberwall设备壁Substratebias基础偏压+-+--+-+++++++++++-----++Principle原理1.Anarcdischargevaporizesmicroscopicareasofthetarget.(“Cathoderoot”,“Spot”)靶材表面的微观区域放电蒸发（“阴极电源”，“斑点”2.Thearcmovesabout,erodingthetargetintheprocess在电弧的运动过程中，侵蚀靶材3.Theionizedtargetconstituentsareacceleratedbyabiasvoltageonthesubstrate离子化的靶材成分通过偏压加速在基体上的运动Page8BusinessUnitCoatingServices/June20072.ArcIonPlating(AIP)-Electricarconacoatingtarget电弧镀－涂层靶材上的电弧Page9BusinessUnitCoatingServices/June20072.ArcIonPlating(AIP)–Characteristics电弧镀－特性•Mostwidelyusedtechnologyintoolcoating在工具涂层中被广泛运用的技术•Advantages优势–Highvaporizationrates(rapidcoating)高蒸发率（快速涂层）–Highionization高离子化率–Relativelyinsensitivetosoiling对污渍反应相对迟钝–Stableprocesses工艺稳定•Disadvantages劣势–Dropletsfromtargetmaterialaredepositedatthesametime同时有靶材材料的液滴沉积Page10BusinessUnitCoatingServices/June20072.ArcIonPlating(AIP)-Dropletcreation电弧镀－液滴形成Target=cathode靶材＝阴极Melt熔液DifficulttoavoidinarcionPlating电弧镀很难避免Vaporizationofthetargetmaterialinthearcroot(=cathodespot)在电弧电源（阴极点)上靶材材料蒸发VaporbubbleburstsReleasingvaporparticles蒸发气泡破裂，蒸发离子释放(atoms,ions原子，离子)Meltflowstotheside,dropletsalmostallemittedatanglesof45°溶液向侧面流动，形成液滴，向两边呈45。C角Arc电弧Atomorion原子或离子Dropletsflightdirection液滴，形成方向1243Droplets液滴Page11BusinessUnitCoatingServices/June20073.MagnetronSputtering(MSIP)–Principle磁控溅射－原理Substratebias基础偏压SubstrateTarget靶材(e.g.Ti例.钛)+-TiNcoating氮化钛涂层ArN2+TiN-+-++-Principle原理1.Ionsfromaglowdischargearebombardedathighenergyontothecoatingmaterial热放电形成离子带着高能量轰击涂层材料2.Atomsare“knockedout”ofthetargetsurfaceanddepositedonthesubstrate原子不能进入靶材表面，并在基体上沉积3.Theprocessrunsinavacuuminordertoobtaintheglowdischargeandfacilitatethetransport工艺在真空环境中进行以进行热放电和离子的自由运动4.Non-conductingmaterialsaresputteredusingRF(13.5MHz)orMF(20-200kHz).绝缘的材料通过RF(13.5MHz)或MF(20-200kHz)被溅射。Page12BusinessUnitCoatingServices/June20073.MagnetronSputtering(MSIP)-Influenceofthemagneticfield磁控溅射－磁性区的影响–Theelectronpathsarelengthenedbymagneticfields.Electrons“spiral”aroundthemagneticfieldlines.Thisincreasestheimpactrateandtheplasmadensity.电子路径在磁性区域中被拉长。电子沿着磁性区域的射线呈螺旋状。这增加了冲击率和离子密度。–Moreionsareproducedandtheamountand/orgeometryofthematerialremovedcanbevaried更多的离子产生了，并且他们的数量和运动的几何形态可以是多样化的–Mostwidelyusedsputteringtechnique.最广泛使用的是溅射技术Magneticfieldlines磁性区的射线A=Anode阳极Page13BusinessUnitCoatingServices/June20073.MagnetronSputtering(MSIP)usingAr/N2gasmixture磁控溅射使用Ar/N2混合气体Page15BusinessUnitCoatingServices/June2007drillpoint钻点Reduction减少0,01/10Twistdrill麻花钻Reduction减少0,1/100Discovertheinvisiblesizewhendrilling,milling,turning发现钻，铣，车加工中不可见的尺寸BALINIT®FUTURANANODemandsduetothespecialapplicationdrilling特殊钻孔的要求Page16BusinessUnitCoatingServices/June2007